2SC4386 Todos los transistores

 ..1. Size:189K  inchange semiconductor
 2sc4386.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4386 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1671 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIM

 8.1. Size:23K  sanken-ele
 2sc4381 2sc4382.pdf

2SC4381/4382 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1667/1668) Application TV Vertical Output, Audio Output Driver and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM20(TO220F) Symbol 2SC4381 2SC4382 Unit Symbol Conditions 2SC4381 2SC4382 Unit 0.2 4.2 0.2 10.1 c0.5 2.8 VCBO 150 200

 8.2. Size:25K  sanken-ele
 2sc4388.pdf

2SC4388 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1673) Application Audio and General Purpose (Ta=25 C) External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25 C) Electrical Characteristics Symbol Conditions 2SC4388 Symbol 2SC4388 Unit Unit 0.2 0.2 5.5 15.6 0.2 3.45 ICBO VCB=200V 10max VCBO 200 V A IEBO VEB=6V 10max A VCEO 180

 8.3. Size:187K  inchange semiconductor
 2sc4383.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4383 DESCRIPTION Mold package that does not require an insulating board or insulation bushing High Speed Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This transistor is ideal for use in 50KHz class switching regulators. ABSOLUTE M

 8.4. Size:170K  inchange semiconductor
 2sc4381.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4381 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min) (BR)CEO DC Current Gain- h = 60(Min)@ (V = 10V, I = 0.7A) FE CE C Complement to Type 2SA1667 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV vertical outp

 8.5. Size:196K  inchange semiconductor
 2sc4388.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4388 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 180V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1673 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIM

 8.6. Size:210K  inchange semiconductor
 2sc4385.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4385 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1670 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMU

 8.7. Size:189K  inchange semiconductor
 2sc4387.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4387 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 140V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1672 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIM

 8.8. Size:171K  inchange semiconductor
 2sc4382.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4382 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 200V(Min) (BR)CEO DC Current Gain- h = 60(Min)@ (V = 10V, I = 0.7A) FE CE C Complement to Type 2SA1668 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV vertical outp