2SC4387 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4387 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 140V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1672 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIM

2SC4381/4382 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1667/1668) Application TV Vertical Output, Audio Output Driver and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM20(TO220F) Symbol 2SC4381 2SC4382 Unit Symbol Conditions 2SC4381 2SC4382 Unit 0.2 4.2 0.2 10.1 c0.5 2.8 VCBO 150 200

2SC4388 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1673) Application Audio and General Purpose (Ta=25 C) External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25 C) Electrical Characteristics Symbol Conditions 2SC4388 Symbol 2SC4388 Unit Unit 0.2 0.2 5.5 15.6 0.2 3.45 ICBO VCB=200V 10max VCBO 200 V A IEBO VEB=6V 10max A VCEO 180

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4383 DESCRIPTION Mold package that does not require an insulating board or insulation bushing High Speed Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This transistor is ideal for use in 50KHz class switching regulators. ABSOLUTE M

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4381 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min) (BR)CEO DC Current Gain- h = 60(Min)@ (V = 10V, I = 0.7A) FE CE C Complement to Type 2SA1667 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV vertical outp

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4388 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 180V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1673 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIM

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4385 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1670 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMU

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4386 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1671 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIM

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4382 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 200V(Min) (BR)CEO DC Current Gain- h = 60(Min)@ (V = 10V, I = 0.7A) FE CE C Complement to Type 2SA1668 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV vertical outp