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2SC439 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SC439
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.5 W
   Tensión colector-base (Vcb): 25 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 200 MHz
   Ganancia de corriente contínua (hfe): 25
   Paquete / Cubierta: TO5

 Búsqueda de reemplazo de transistor bipolar 2SC439

 

2SC439 Datasheet (PDF)

 0.1. Size:465K  toshiba
2sc4394.pdf pdf_icon

2SC439

2SC4394 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4394 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high cain. NF = 1.1dB, S 2 = 11dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V C

 0.2. Size:318K  toshiba
2sc4393.pdf pdf_icon

2SC439

2SC4393 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4393 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure. NF = 1.5dB, S 2 = 16dB (f = 500 MHz) 21e NF = 1.7dB, S 2 = 10.5dB (f = 1000 MHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 17 V Collector-emitter voltage

 0.3. Size:153K  sanyo
2sc4399.pdf pdf_icon

2SC439

Ordering number EN3020 NPN Epitaxial Planar Silicon Transistor 2SC4399 High-Frequency General-Purpose Amplifier Applications Features Package Dimensions High power gain PG=25dB typ (f=100MHz). unit mm Very small-sized package permitting the 2SC4399- 2059B applied sets to be made small and slim. [2SC4399] 0.3 0.15 3 0 0.1 1 2 0.3 0.6 0.65 0.65 0.9 2.0 1 Base 2

 0.4. Size:91K  sanyo
2sc4390.pdf pdf_icon

2SC439

Ordering number EN2958A NPN Epitaxial Planar Silicon Transistor 2SC4390 High-hFE, AF Amplifier Applications Features Package Dimensions Adoption of MBIT process. unit mm High DC current gain (hFE=800 to 3200). 2038A Large current capacity (IC=2A). [2SC4390] Low collector-to-emitter saturation voltage 4.5 (VCE(sat) 0.3V). 1.5 1.6 High VEBO (VEBO 15V). 0.

Otros transistores... 2SC4381 , 2SC4382 , 2SC4383 , 2SC4385 , 2SC4386 , 2SC4387 , 2SC4388 , 2SC4389 , 2SC2073 , 2SC4390 , 2SC4391 , 2SC4392 , 2SC4393 , 2SC4394 , 2SC4396 , 2SC4397 , 2SC4398 .

History: KRA764F | KT644G

 

 
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