2SC4390 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Ordering number:EN2958ANPN Epitaxial Planar Silicon Transistor2SC4390High-hFE, AF Amplifier ApplicationsFeatures Package Dimensions Adoption of MBIT process.unit:mm High DC current gain (hFE=800 to 3200).2038A Large current capacity (IC=2A).[2SC4390] Low collector-to-emitter saturation voltage4.5(VCE(sat) 0.3V). 1.51.6 High VEBO (VEBO 15V).0.

SMD Type TransistorsNPN Transistors2SC4390SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=2A Collector Emitter Voltage VCEO=10V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 10 V Emitter - Base Voltage VEBO

2SC4394 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4394 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high cain. NF = 1.1dB, |S |2 = 11dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3 VC

2SC4393 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4393 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure. NF = 1.5dB, |S |2 = 16dB (f = 500 MHz) 21e NF = 1.7dB, |S |2 = 10.5dB (f = 1000 MHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 17 VCollector-emitter voltage

Ordering number:EN3020NPN Epitaxial Planar Silicon Transistor2SC4399High-FrequencyGeneral-Purpose Amplifier ApplicationsFeatures Package Dimensions High power gain : PG=25dB typ (f=100MHz).unit:mm Very small-sized package permitting the 2SC4399-2059Bapplied sets to be made small and slim.[2SC4399]0.30.1530~0.11 20.3 0.60.65 0.650.92.01 : Base2 :

Transistor2SC4391Silicon NPN epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SA16742.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesLow collector to emitter saturation voltage VCE(sat).High collector to emitter voltage VCEO.0.65 max.Allowing supply with the radial taping.+0.1 0.450.05Absolute Maximum Ratings (Ta=25