2SC4391 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Transistor 2SC4391 Silicon NPN epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SA1674 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Low collector to emitter saturation voltage VCE(sat). High collector to emitter voltage VCEO. 0.65 max. Allowing supply with the radial taping. +0.1 0.45 0.05 Absolute Maximum Ratings (Ta=25

2SC4394 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4394 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high cain. NF = 1.1dB, S 2 = 11dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V C

2SC4393 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4393 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure. NF = 1.5dB, S 2 = 16dB (f = 500 MHz) 21e NF = 1.7dB, S 2 = 10.5dB (f = 1000 MHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 17 V Collector-emitter voltage

Ordering number EN3020 NPN Epitaxial Planar Silicon Transistor 2SC4399 High-Frequency General-Purpose Amplifier Applications Features Package Dimensions High power gain PG=25dB typ (f=100MHz). unit mm Very small-sized package permitting the 2SC4399- 2059B applied sets to be made small and slim. [2SC4399] 0.3 0.15 3 0 0.1 1 2 0.3 0.6 0.65 0.65 0.9 2.0 1 Base 2

Ordering number EN2958A NPN Epitaxial Planar Silicon Transistor 2SC4390 High-hFE, AF Amplifier Applications Features Package Dimensions Adoption of MBIT process. unit mm High DC current gain (hFE=800 to 3200). 2038A Large current capacity (IC=2A). [2SC4390] Low collector-to-emitter saturation voltage 4.5 (VCE(sat) 0.3V). 1.5 1.6 High VEBO (VEBO 15V). 0.

SMD Type Transistors NPN Transistors 2SC4390 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=2A Collector Emitter Voltage VCEO=10V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 10 V Emitter - Base Voltage VEBO