2SC4399 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC4399

Código: F3_F4_F5

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-base (Vcb): 30 V

Tensión colector-emisor (Vce): 20 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.03 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 320 MHz

Capacitancia de salida (Cc): 1.2 pF

Ganancia de corriente contínua (hFE): 60

Encapsulados: TO323

 Búsqueda de reemplazo de 2SC4399

- Selecciónⓘ de transistores por parámetros

 

2SC4399 datasheet

 ..1. Size:153K  sanyo
2sc4399.pdf pdf_icon

2SC4399

Ordering number EN3020 NPN Epitaxial Planar Silicon Transistor 2SC4399 High-Frequency General-Purpose Amplifier Applications Features Package Dimensions High power gain PG=25dB typ (f=100MHz). unit mm Very small-sized package permitting the 2SC4399- 2059B applied sets to be made small and slim. [2SC4399] 0.3 0.15 3 0 0.1 1 2 0.3 0.6 0.65 0.65 0.9 2.0 1 Base 2

 8.1. Size:465K  toshiba
2sc4394.pdf pdf_icon

2SC4399

2SC4394 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4394 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high cain. NF = 1.1dB, S 2 = 11dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V C

 8.2. Size:318K  toshiba
2sc4393.pdf pdf_icon

2SC4399

2SC4393 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4393 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure. NF = 1.5dB, S 2 = 16dB (f = 500 MHz) 21e NF = 1.7dB, S 2 = 10.5dB (f = 1000 MHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 17 V Collector-emitter voltage

 8.3. Size:91K  sanyo
2sc4390.pdf pdf_icon

2SC4399

Ordering number EN2958A NPN Epitaxial Planar Silicon Transistor 2SC4390 High-hFE, AF Amplifier Applications Features Package Dimensions Adoption of MBIT process. unit mm High DC current gain (hFE=800 to 3200). 2038A Large current capacity (IC=2A). [2SC4390] Low collector-to-emitter saturation voltage 4.5 (VCE(sat) 0.3V). 1.5 1.6 High VEBO (VEBO 15V). 0.

Otros transistores... 2SC4390, 2SC4391, 2SC4392, 2SC4393, 2SC4394, 2SC4396, 2SC4397, 2SC4398, A940, 2SC4399-3, 2SC4399-4, 2SC4399-5, 2SC44, 2SC440, 2SC4400, 2SC4400-3, 2SC4400-4