2SC4410 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Transistor2SC4410Silicon NPN epitaxial planer typeFor UHF amplificationUnit: mm2.1 0.1Features 0.425 1.25 0.1 0.425Allowing the small current and low voltage operation.High transition frequency fT.1S-Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazinepacking. 2Absolute Maximum Ratings (Ta=25C

Transistor2SC4410Silicon NPN epitaxial planer typeFor UHF amplificationUnit: mm2.1 0.1Features 0.425 1.25 0.1 0.425Allowing the small current and low voltage operation.High transition frequency fT.1S-Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazinepacking. 2Absolute Maximum Ratings (Ta=25C

Ordering number:EN2923NPN Epitaxial Planar Silicon Transistor2SC4413Low-FrequencyGeneral-Purpose Amplifier ApplicationsFeatures Package Dimensions Very small-sized package permitting the 2SC4413-unit:mmapplied sets to be made small and slim.2059B Adoption of FBET process.[2SC4413] High DC current gain.0.30.15 Low collector-to-emitter saturation voltage.

Ordering number : ENN3019B2SC4412NPN Triple Diffused Planar Silicon Transistor2SC4412TV Camera DeflectionHigh-Voltage Driver ApplicationsFeaturesPackage Dimensions High breakdown voltage(VCEO300V).unit : mm Small reverse transfer capacitance and excellent high2018Bfrequency characteristic(Cre : 1.0pF typ).[2SC4412] Excellent DC current gain ratio(hFE rati

Ordering number:EN3012PNP/NPN Epitaxial Planar Silicon Transistors2SA1683/2SC4414Low-Frequency General-Purpose Amplifier,Low-Frequency Power Amplifier ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm High breakdown voltage : VCEO>80V.2033[2SA1683/2SC4414]B : BaseC : CollectorE : Emitter( ) : 2SA1683SANYO : SPASpecificationsAbsolute

Transistor2SC4417Silicon NPN epitaxial planer typeFor intermadiate frequency amplification of TV imageUnit: mm2.1 0.10.425 1.25 0.1 0.425FeaturesHigh transition frequency fT. 1Satisfactory linearity of forward current transfer ratio hFE.S-Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazine2pa

Transistor2SC4417Silicon NPN epitaxial planer typeFor intermadiate frequency amplification of TV imageUnit: mm2.1 0.10.425 1.25 0.1 0.425FeaturesHigh transition frequency fT. 1Satisfactory linearity of forward current transfer ratio hFE.S-Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazine2pa

2SC4416Silicon NPN EpitaxialApplicationUHF Frequency conversion, Wide band amplifierOutlineMPAK311. Base2. Emitter23. Collector2SC4416Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 25 VCollector to emitter voltage VCEO 13 VEmitter to base voltage VEBO 3VCollector current IC 50 mACollector power dissipation PC 15

2SC4418Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General PurposeExternal Dimensions FM20(TO220F) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SC4418 Unit Symbol Conditions 2SC4418Unit0.24.20.210.1c0.52.8VCBO 500 V ICBO VCB=500V 100max A

SMD Type TransistorsNPN Transistors2SC4416SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=13V 1 2+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collecto

SMD Type TransistorsNPN Transistors2SC4412SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=50mA1 2 Collector Emitter Voltage VCEO=300V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 300 Col

isc Silicon NPN Power Transistor 2SC4419DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXI

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4418DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25