2SC4433F Todos los transistores

 7.1. Size:71K  sanyo
 2sc4433.pdf

Ordering number EN3553 NPN Epitaxial Planar Silicon Transistor 2SC4433 HF Amplifier Applications Features Package Dimensions High power gain PG=28dB typ (f=100MHz). unit mm High cutoff frequency fT=750MHz typ. 2033A Small Cob, Cre. [2SC4433] 2.2 4.0 0.4 0.5 0.4 0.4 1 2 3 1 Emitter 1.3 1.3 2 Collector 3 Base 3.0 3.8 SANYO SPA Specifications Absol

 8.1. Size:234K  toshiba
 2sc4439.pdf

 8.2. Size:23K  sanyo
 2sc4432.pdf

Ordering number ENN3184A 2SC4432 NPN Epitaxial Planar Silicon Transistor 2SC4432 High-Frequency General-Purpose Amplifier Applications Features Package Dimensions High power gain. unit mm High cutoff frequency. 2018B Small Cob, Cre. [2SC4432] Ultrasmall-sized package permitting the 2SC4432- applied sets to be made small and slim. 0.4 0.16 3 0 to 0.1 1 0.9

 8.3. Size:92K  sanyo
 2sc4435.pdf

Ordering number EN3791 NPN Triple Diffused Planar Silicon Transistor 2SC4435 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features Package Dimensions Fast switching speed (tf=300ns max). unit mm High brocking voltage (VCBO=1500V). 2022A High reliability (Adoption of HVP process). [2SC4435] Adoption of MBIT process. 15.6 3.2 4.8 14.

 8.4. Size:132K  sanyo
 2sc4438.pdf

 8.5. Size:107K  sanyo
 2sc4430.pdf

Ordering number EN2853 NPN Triple Diffused Planar Silicon Transistor 2SC4430 800V/12A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit mm Fast switching speed (tf 0.1 s typ). 2039D Wide ASO. [2SC4430] Adoption of MBIT process. 16.0 5.6 3.4 Micaless package facilitating easy mounting. 3.1 2.8 2.0

 8.6. Size:91K  sanyo
 2sc4437.pdf

Ordering number EN3792 NPN Triple Diffused Planar Silicon Transistor 2SC4437 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=0.3ns max). unit mm High breakdown voltage (VCBO=1500V). 2039D High reliability (adoption of HVP process). [2SC4437] Adoption of MBIT process. 16.0 5.6 3.4 3.1 2.8 2.

 8.7. Size:25K  sanken-ele
 2sc4434.pdf

2SC4434 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application Switching Regulator, Lighting Inverter, and General Purpose External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SC4434 Unit Symbol Conditions 2SC4434 Unit 0.2 4.8 0.4 15.6 0.1 9.6 2.0 VCBO 500 V I

 8.8. Size:917K  kexin
 2sc4432.pdf

SMD Type Transistors NPN Transistors 2SC4432 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features High power gain. High cutoff frequency. 1 2 Complementary to 2SA1815 +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collecto

 8.9. Size:212K  inchange semiconductor
 2sc4434.pdf

isc Silicon NPN Power Transistor 2SC4434 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator, lighting inverter, and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU

 8.10. Size:189K  inchange semiconductor
 2sc4438.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4438 DESCRIPTION High Breakdown Voltage- V = 1500V(Min) (BR)CBO High Switching Speed High Reliability 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Ultrahigh-definition color display horizontal deflection output applications ABSOLUTE MAXI

 8.11. Size:182K  inchange semiconductor
 2sc4430.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4430 DESCRIPTION NPN triple diffused planar silicon transistor High Switching Speed Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME

 8.12. Size:189K  inchange semiconductor
 2sc4437.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4437 DESCRIPTION High Breakdown Voltage- V = 1500V(Min) (BR)CBO High Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Ultrahigh-definition color display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25