2SC4448 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Product Specification www.jmnic.com Silicon Power Transistors 2SC4448 DESCRIPTION With TO-220F package High voltage ,high frequency APPLICATIONS Chroma output applications for HDTV Video output applications for high resolution display PINNING PIN DESCRIPTION1 Base 2 Collector3 emitterFig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings(Ta=

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4448DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 250V(Min)(BR)CEOHigh DC Current Gain100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSChroma output applications for HDTVVideo output applications for high resolution displayABSOLU

Ordering number:EN3200PNP/NPN Epitaxial Planar Silicon Transistors2SA1685/2SC4443High-Speed Switching ApplicationsFeatures Package Dimensions Fast switching speed.unit:mm High gain-bandwidth product.2059 Low saturation voltage.[2SA1685/2SC4443]B : BaseC : CollectorE : Emitter( ) : 2SA1685SANYO : MCPSpecificationsAbsolute Maximum Ratings at Ta = 25C

Ordering number:EN3013PNP/NPN Epitaxial Planar Silicon Transistors2SA1687/2SC4446Low-FrequencyGeneral-Purpose Amplifier ApplicationsFeatures Package Dimensions Very small-sized package permitting the 2SA1687/unit:mm2SC4446-applied sets to be made small and slim.2059 High VEBO.[2SA1687/2SC4446]B : BaseC : CollectorE : Emitter( ) : 2SA1687SANYO : MCPSpecifi

Ordering number:EN3794NPN Triple Diffused Planar Silicon Transistor2SC4441Ultrahigh-Definition Monocuro DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High reliability (Adoption of HVP process).unit:mm Fast switching speed.2041A High breakdown voltage.[2SC4441] Wide ASO. 4.510.02.8 Adoption of MBIT process.3.2 Mica

Ordering number:EN3793NPN Triple Diffused Planar Silicon Transistor2SC4440Ultrahigh-Definition Monochrome DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High reliability (Adoption of HVP process).unit:mm Fast switching speed.2041A High brocking voltage.[2SC4440] Wide ASO. 4.510.02.8 Adoption of MBIT process.3.2 Mic

Ordering number:EN3241NPN Triple Diffused Planar Silicon Transistor2SC4449TV Camera Deflection,High-Voltage Driver ApplicationsFeatures Package Dimensions High breakdown voltage.unit:mm Small reverse transfer capacitance and excellent high2003Bfrequency characteristic.[2SC4449] Excellent DC current gain.5.04.04.0 Adoption of FBET process.0.450.5

JMnic Product SpecificationSilicon NPN Power Transistors 2SC4445 DESCRIPTION With TO-3PML package High voltage. High speed switching APPLICATIONS For switching regulator and general purpose applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAabsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDI

2SC4445Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose(Ta=25C) External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25C) Electrical CharacteristicsSymbolSymbol 2SC4445 Unit Conditions 2SC4445 Unit0.20.2 5.515.60.23.45ICBOVCBO 900 V VCB=800V 100max

SMD Type TransistorsNPN Transistors2SC4443 Features Fast switching speed. High gain-bandwidth product. Low saturation voltage. Complementary to 2SA16851 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 20 V Emitter - Base Voltage VEBO 5

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4445DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplicatio

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4442DESCRIPTION Collector-Base Breakdown Voltage-: V = 500V(Min.)(BR)CBOWide Area of Safe OperationHigh Speed Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RA