2SC448 Todos los transistores

 

2SC448 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SC448
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 5 W
   Tensión colector-base (Vcb): 100 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 2 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 95 MHz
   Ganancia de corriente contínua (hfe): 10
   Paquete / Cubierta: TO62
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2SC448 Datasheet (PDF)

 0.1. Size:115K  sanyo
2sa1709 2sc4489.pdf pdf_icon

2SC448

Ordering number:ENN3096PNP/NPN Epitaxial Planar Silicon Transistors2SA1709/2SC4489High-Voltage Switching ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT processes.unit:mm High breakdown voltage, large current capacity.2064A Fast switching speed.[2SA1709/2SC4489]2.51.456.9 1.00.60.9 0.51 2 30.451 : Base2 : Collector( ) 2SA17093 :

 0.2. Size:133K  sanyo
2sc4485.pdf pdf_icon

2SC448

Ordering number:EN3025PNP/NPN Epitaxial Planar Silicon Transistors2SA1705/2SC4485Low-Frequency Power Amplifier ApplicationsApplications Package Dimensions Voltage regulators, relay drivers, lamp drivers. unit:mm2064Features [2SA1705/2SC4485] Adoption of FBET process. Fast switching speed.E : EmitterC : CollectorB : Base( ) : 2SA1705SANYO : NMPSpecification

 0.3. Size:153K  sanyo
2sc4489.pdf pdf_icon

2SC448

Ordering number:EN3096PNP/NPN Epitaxial Planar Silicon Transistors2SA1709/2SC4489High-Voltage Switching ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT processes.unit:mm High breakdown voltage, large current capacity.2064 Fast switching speed.[2SA1709/2SC4489]E : EmitterC : CollectorB : Base( ) 2SA1709SANYO : NMPSpecificationsAbsolute Ma

 0.4. Size:68K  sanyo
2sa1708 2sc4488.pdf pdf_icon

2SC448

Ordering number : EN3094A2SA1708 / 2SC4488SANYO SemiconductorsDATA SHEETPNP / NPN Epitaxial Planar Silicon Transistors2SA1708 / 2SC4488High-Voltage Switching ApplicationsFeatures Adoption of FBET, MBIT processes. High breakdown voltage, large current capacity. Fast switching speed.Specifications ( ) : 2SA1708Absolute Maximum Ratings at Ta=25CParameter Symbol

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: CD2812 | CP500 | 2N2730 | BSY84 | ZTX500L | GA4A4P | DXT2013P5

 

 
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