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2SC448 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SC448
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 5 W
   Tensión colector-base (Vcb): 100 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 2 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 95 MHz
   Ganancia de corriente contínua (hfe): 10
   Paquete / Cubierta: TO62
 

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2SC448 Datasheet (PDF)

 0.1. Size:115K  sanyo
2sa1709 2sc4489.pdf pdf_icon

2SC448

Ordering number:ENN3096PNP/NPN Epitaxial Planar Silicon Transistors2SA1709/2SC4489High-Voltage Switching ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT processes.unit:mm High breakdown voltage, large current capacity.2064A Fast switching speed.[2SA1709/2SC4489]2.51.456.9 1.00.60.9 0.51 2 30.451 : Base2 : Collector( ) 2SA17093 :

 0.2. Size:133K  sanyo
2sc4485.pdf pdf_icon

2SC448

Ordering number:EN3025PNP/NPN Epitaxial Planar Silicon Transistors2SA1705/2SC4485Low-Frequency Power Amplifier ApplicationsApplications Package Dimensions Voltage regulators, relay drivers, lamp drivers. unit:mm2064Features [2SA1705/2SC4485] Adoption of FBET process. Fast switching speed.E : EmitterC : CollectorB : Base( ) : 2SA1705SANYO : NMPSpecification

 0.3. Size:153K  sanyo
2sc4489.pdf pdf_icon

2SC448

Ordering number:EN3096PNP/NPN Epitaxial Planar Silicon Transistors2SA1709/2SC4489High-Voltage Switching ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT processes.unit:mm High breakdown voltage, large current capacity.2064 Fast switching speed.[2SA1709/2SC4489]E : EmitterC : CollectorB : Base( ) 2SA1709SANYO : NMPSpecificationsAbsolute Ma

 0.4. Size:68K  sanyo
2sa1708 2sc4488.pdf pdf_icon

2SC448

Ordering number : EN3094A2SA1708 / 2SC4488SANYO SemiconductorsDATA SHEETPNP / NPN Epitaxial Planar Silicon Transistors2SA1708 / 2SC4488High-Voltage Switching ApplicationsFeatures Adoption of FBET, MBIT processes. High breakdown voltage, large current capacity. Fast switching speed.Specifications ( ) : 2SA1708Absolute Maximum Ratings at Ta=25CParameter Symbol

Otros transistores... 2SC4471 , 2SC4473 , 2SC4474 , 2SC4475 , 2SC4476 , 2SC4477 , 2SC4478 , 2SC4479 , 2SD1047 , 2SC4480 , 2SC4481 , 2SC4482 , 2SC4483 , 2SC4484 , 2SC4485 , 2SC4486 , 2SC4487 .

History: C9013-H-E | BUL52BFI | CSC1393 | 2SA2154 | MJE200G | BTB1424AT3 | DTC115TM3T5G

 

 
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