2SC4489 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC4489
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1 W
Tensión colector-base (Vcb): 120 V
Tensión colector-emisor (Vce): 100 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 120 typ MHz
Capacitancia de salida (Cc): 16 pF
Ganancia de corriente contínua (hFE): 100
Encapsulados: NMP
Búsqueda de reemplazo de 2SC4489
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2SC4489 datasheet
..1. Size:115K sanyo
2sa1709 2sc4489.pdf 
Ordering number ENN3096 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1709/2SC4489 High-Voltage Switching Applications Features Package Dimensions Adoption of FBET, MBIT processes. unit mm High breakdown voltage, large current capacity. 2064A Fast switching speed. [2SA1709/2SC4489] 2.5 1.45 6.9 1.0 0.6 0.9 0.5 1 2 3 0.45 1 Base 2 Collector ( ) 2SA1709 3
..2. Size:153K sanyo
2sc4489.pdf
Ordering number EN3096 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1709/2SC4489 High-Voltage Switching Applications Features Package Dimensions Adoption of FBET, MBIT processes. unit mm High breakdown voltage, large current capacity. 2064 Fast switching speed. [2SA1709/2SC4489] E Emitter C Collector B Base ( ) 2SA1709 SANYO NMP Specifications Absolute Ma
0.1. Size:545K onsemi
2sa1709s-an 2sa1709t-an 2sc4489s-an 2sc4489t-an.pdf
Ordering number EN3096A 2SA1709/2SC4489 Bipolar Transistor http //onsemi.com (-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single NMP Features Adoption of FBET, MBIT processes High breakdown voltage, large current capacity Fast switching speed ( )2SA1709 Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VC
8.1. Size:133K sanyo
2sc4485.pdf
Ordering number EN3025 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1705/2SC4485 Low-Frequency Power Amplifier Applications Applications Package Dimensions Voltage regulators, relay drivers, lamp drivers. unit mm 2064 Features [2SA1705/2SC4485] Adoption of FBET process. Fast switching speed. E Emitter C Collector B Base ( ) 2SA1705 SANYO NMP Specification
8.2. Size:68K sanyo
2sa1708 2sc4488.pdf
Ordering number EN3094A 2SA1708 / 2SC4488 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1708 / 2SC4488 High-Voltage Switching Applications Features Adoption of FBET, MBIT processes. High breakdown voltage, large current capacity. Fast switching speed. Specifications ( ) 2SA1708 Absolute Maximum Ratings at Ta=25 C Parameter Symbol
8.3. Size:153K sanyo
2sc4488.pdf
Ordering number EN3094 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1708/2SC4488 High-Voltage Switching Applications Features Package Dimensions Adoption of FBET, MBIT processes. unit mm High breakdown voltage, large current capacity. 2064 Fast switching speed. [2SA1708/2SC4488] E Emitter C Collector B Base ( ) 2SA1708 SANYO NMP Specifications Absolute
8.4. Size:35K sanyo
2sc4482.pdf
Ordering number ENN3235 NPN Epitaxial Planar Silicon Transistor 2SC4482 High-Current Switching Applications Features Package Dimensions Low saturation voltage. unit mm Large current capacity. 2064A High-speed switching. [2SC4482] 2.5 1.45 6.9 1.0 0.6 0.9 0.5 1 2 3 0.45 1 Emitter 2 Collector 3 Base 2.54 2.54 SANYO NMP Specifications Absolute Maximum Ra
8.5. Size:139K sanyo
2sc4486.pdf
Ordering number EN3026 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1706/2SC4486 High-Current Switching Applications Applications Package Dimensions Voltage regulators, relay drivers, lamp drivers. unit mm 2064 Features [2SA1706/2SC4486] Adoption of FBET, MBIT processes. Large current capacity and wide ASO. Fast switching speed. E Emitter C Collector B Base
8.6. Size:134K sanyo
2sc4484.pdf
Ordering number EN3024 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1704/2SC4484 High-Current Driver Applications Applications Package Dimensions Voltage regulators, relay drivers. lamp drivers. unit mm 2064 Features [2SA1704/2SC4484] Adoption of FBET, MBIT processes. Low collector-to-emitter voltage. Large current capacity and wide ASO. Fast switching speed.
8.7. Size:61K sanyo
2sa1707 2sc4487.pdf
Ordering number ENN3093 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1707/2SC4487 High-Current Switching Applications Features Package Dimensions Adoption of FBET, MBIT processes. unit mm Large current capacity, wide ASO. 2064A Low collector-to-emitter saturation voltage. [2SA1707/2SC4487] Fast switching speed. 2.5 1.45 6.9 1.0 0.6 0.9 0.5 1 2 3 0.45 1 Em
8.8. Size:154K sanyo
2sc4487.pdf
Ordering number EN3093 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1707/2SC4487 High-Current Switching Applications Features Package Dimensions Adoption of FBET, MBIT processes. unit mm Large current capacity, wide ASO. 2064 Low collector-to-emitter saturation voltage. [2SA1707/2SC4487] Fast switching speed. E Emitter C Collector B Base ( ) 2SA1707 SA
8.9. Size:99K sanyo
2sc4480.pdf
Ordering number EN3234 NPN Epitaxial Planar Silicon Transistor 2SC4480 Low-Frequency General-Purpose Amplifier, General Driver Applications Features Package Dimensions Large current capacity. unit mm Adoption of MBIT process. 2064A High DC current gain. [2SC4480] 2.5 Low collector-to-emitter saturation voltage. 1.45 High VEBO. 6.9 1.0 0.6 0.9 0.5 1 2 3 0.
8.10. Size:125K sanyo
2sa1703 2sc4483.pdf
Ordering number EN3023 PNP/NPN Epitaxial Planar Silicon Transistor 2SA1703/2SC4483 Low-Frequency Amplifier, Electronic Governor Applications Features Package Dimensions Low collector-to-emitter saturation voltage. unit mm 2064 [2SA1703/2SC4483] E Emitter C Collector B Base ( ) 2SA1703 SANYO NMP Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol
8.11. Size:143K sanyo
2sa1701 2sc4481.pdf
Ordering number EN3022 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1701/2SC4481 Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions AF power amplifier, medium-speed switching, small- unit mm sized motor driver applications. 2064 [2SA1701/2SC4481] Features Large current capacity. Low collector-to-emitter saturation voltage. E Emitt
8.12. Size:556K onsemi
2sa1708s-an 2sa1708t-an 2sc4488s-an 2sc4488t-an.pdf
Ordering number EN3094B 2SA1708/2SC4488 Bipolar Transistor http //onsemi.com ( ) ( ) ( ) ( ) - 100V, - 1A, Low VCE sat , PNP NPN Single NMP Features Adoption of FBET, MBIT processes High breakdown voltage, large current capacity Fast switching speed ( )2SA1708 Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-Ba
8.13. Size:519K onsemi
2sc4482t-an 2sc4482u-an.pdf
Ordering number EN3235A 2SC4482 Bipolar Transistor http //onsemi.com ( ) 20V, 5A, Low VCE sat , NPN Single NMP Features Low saturation voltage Large current capacity High-speed switching Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 60 V Collector-to-Emitter Voltage VCEO 20 V Emitter-to-Ba
8.14. Size:545K onsemi
2sa1707s-an 2sa1707t-an 2sc4487s-an 2sc4487t-an.pdf
Ordering number EN3093A 2SA1707/2SC4487 Bipolar Transistor http //onsemi.com (-)50V, (-)3A, Low VCE(sat), (PNP)NPN Single NMP Features Adoption of FBET, MBIT processes Large current capacity, wide ASO Low collector-to-emitter saturation voltage Fast switching speed ( )2SA1707 Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings
Otros transistores... 2SC4481, 2SC4482, 2SC4483, 2SC4484, 2SC4485, 2SC4486, 2SC4487, 2SC4488, MJE340, 2SC449, 2SC4490, 2SC4491, 2SC4492, 2SC4493, 2SC4494, 2SC4495, 2SC4496
