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2SC4498 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SC4498
   Código: QY
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.5 W
   Tensión colector-base (Vcb): 50 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 200
   Paquete / Cubierta: TO236
 

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2SC4498 Datasheet (PDF)

 8.1. Size:253K  toshiba
2sc4497.pdf pdf_icon

2SC4498

2SC4497 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC4497 High Voltage Control Applications Unit: mm High voltage: VCBO = 300 V, VCEO = 300 V Low saturation voltage: V = 0.5 V (max) CE (sat) Small collector output capacitance: C = 3 pF (typ.) ob Complementary to 2SA1721 Maximum Ratings (Ta == 25C) ==Characteristics Symbol Ra

 8.2. Size:80K  sanyo
2sc4492.pdf pdf_icon

2SC4498

 8.3. Size:148K  sanyo
2sa1710 2sc4490.pdf pdf_icon

2SC4498

Ordering number:EN3097PNP/NPN Epitaxial Planar Silicon Transistors2SA1710/2SC4490High-Definition CRT DisplayVideo Output ApplicationsFeatures Package Dimensions High breakdown voltage (VCEO 300V).unit:mm Excellent high frequency characteristic.2064 Adoption of MBIT process.[2SA1710/2SC4490]E : EmitterC : CollectorB : Base( ) : 2SA1710SANYO : NMPSpec

 8.4. Size:87K  sanyo
2sc4493.pdf pdf_icon

2SC4498

Ordering number:EN3099NPN Triple Diffused Planar Silicon Transistor2SC4493High-Voltage Amplifier,High-Voltage Switching ApplicationsFeatures Package Dimensions High breakdown voltage.unit:mm Small Cob.2049C High reliability (Adoption of HVP process).[2SC4493] Intended for high-density mounting (Suitable for sets10.24.51.3whose height is restricted).

Otros transistores... 2SC4490 , 2SC4491 , 2SC4492 , 2SC4493 , 2SC4494 , 2SC4495 , 2SC4496 , 2SC4497 , 9014 , 2SC4499 , 2SC4499L , 2SC4499S , 2SC45 , 2SC450 , 2SC4500 , 2SC4500L , 2SC4500S .

History: MUN2214LT1

 

 
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