2SC4543 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Transistor2SC4543Silicon NPN epitaxial planer typeFor video amplifierUnit: mm1.5 0.14.5 0.11.6 0.2FeaturesHigh transition frequency fT.Small collector output capacitance Cob.45Wide current range.0.4 0.080.4 0.040.5 0.081.5 0.1Absolute Maximum Ratings (Ta=25C)3.0 0.15Parameter Symbol Ratings Unit3 2 1Collector to base voltage VCBO 110

Transistor2SC4543Silicon NPN epitaxial planer typeFor video amplifierUnit: mm1.5 0.14.5 0.11.6 0.2FeaturesHigh transition frequency fT.Small collector output capacitance Cob.45Wide current range.0.4 0.080.4 0.040.5 0.081.5 0.1Absolute Maximum Ratings (Ta=25C)3.0 0.15Parameter Symbol Ratings Unit3 2 1Collector to base voltage VCBO 110

SMD Type TransistorsNPN Transistors2SC4543SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=0.15A Collector Emitter Voltage VCEO=50V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 110 Collector - Emitter voltage VCER 100REB = 1.2KV Collect

2SC4540 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4540 Power Amplifier Applications Unit: mm Power Switching Applications Low saturation voltage: VCE (sat) = 0.5 V (max) (I = 500 mA) C High speed switching time: t = 0.4 s (typ.) stg Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SA1735 Ma

2SC4541 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4541 Power Amplifier Applications Unit: mm Power Switching Applications Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1.5 A) High speed switching time: t = 0.5 s (typ.) stg Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SA1736 Max

Ordering number:EN3712NPN Planar Silicon Darlington Transistor2SC454785V/3A Driver ApplicationsApplications Package Dimensions Suitable for use in switching of L load (motorunit:mmdrivers, printer hammer drivers, relay drivers).2010C[2SC4169]10.24.5Features3.65.11.3 High DC current gain. Large current capacity and Wide ASO. Contains Zener diode of

Ordering number:EN3188PNP Epitaxial Planar Silicon TransistorNPN Triple Diffuesd Planar Silicon Transistor2SA1740/2SC4548High-Voltage Driver ApplicationsFeatures Package Dimensions High breakdown votlage.unit:mm Adoption of MBIT process.2038 Excellent hFE linearlity.[2SA1740/2SC4548]E : EmitterC : CollectorB : Base( ) : 2SA1740SANYO : PCP(Bottom view)

MCC2SC4548-DTM Micro Commercial Components20736 Marilla Street ChatsworthMicro Commercial Components2SC4548-ECA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Small Flat Package NPN Epitaxial Low collector-to-emitter saturation voltage. Fast switching speed.Planar Silicon Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level

MCC2SC4548-DTM Micro Commercial Components20736 Marilla Street ChatsworthMicro Commercial Components2SC4548-ECA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Small Flat Package NPN Epitaxial Low collector-to-emitter saturation voltage. Fast switching speed.Planar Silicon Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level

Power Transistors2SC4545Silicon NPN epitaxial planar typeFor medium output power amplificationUnit: mm7.50.2 4.50.2 Features Allowing supply with the radial taping0.650.1 0.850.10.8 C 0.8 C1.00.10.70.10.70.1 Absolute Maximum Ratings Ta = 25C1.150.21.150.2Parameter Symbol Rating UnitCollector-base voltage (Emitter open) VCBO 50 V0.

UNISONIC TECHNOLOGIES CO., LTD 2SC4548 NPN SILICON TRANSISTOR HIGH VOLTAGE DRIVER APPLICATION FEATURES *High breakdown voltage. *Excellent hFE linearity. ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC4548L-x-AB3-R 2SC4548G-x-AB3-R SOT-89 B C E Tape ReelNote: Pin Assignment: E: EMITTER C: COLLECTOR B: BASE www.un

2SC454Silicon NPN EpitaxialApplicationHigh frequency amplifier, mixerOutlineTO-92 (2)1. Emitter2. Collector3. Base3212SC454Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 30 VEmitter to base voltage VEBO 5VCollector current IC 100 mACollector power dissipation PC 200 mWJunc

2SC4548 0.2A , 400V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES 4 Small Flat Package High Breakdown Voltage 12 Excellent hFE Linearity 3B C AE ECCLASSIFICATION OF hFE B DProduct-Rank 2SC4548-D 2SC4548-E F GH KRange 60~120 100~200 J LM

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SC4548 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Small Flat Package High Breakdown Voltage 3. EMITTER Excellent hFE Linearity MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 400 V VCEO Collector-Emit

2SC4546Silicon NPN Triple Diffused Planar Transistor (High Voltage and Ultra-high Speed Switchihg Transistor)Application : Switching Regulator, Lighting Inverter and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F)Symbol 2SC4546 Unit Symbol Conditions 2SC4546 Unit0.24.20.210.1c0.52.8VCBO 600 V IC

2SC4548 SOT-89-3L TRANSISTOR(NPN)1. BASE FEATURES 2. COLLECTOR Small Flat Package High Breakdown Voltage 3. EMITTER Excellent hFE Linearity MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current 200 mA PC Collector Pow

2SC4544(NPN) TO-220 TransistorTO-2201. BASE 2. COLLECTOR 3. EMITTER 3 21Features High voltage: V (BR) CEO = 300 V Small collector output capacitance: Cob = 3.0 pF (typ.) Collector metal (fin) is fully covered with mold resin. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 300 V Dimensions in inches an

2SC4548NPN EPITAXIAL PLANAR TRANSISTORP b Lead(Pb)-Free1. BASE2. COLLECTOR3. EMITTER 123SOT-89ABSOLUTE MAXIMUM RATINGS(TA=25C Unless Otherwise Noted)Rating Symbol Value UnitVCBO400 VCollector to Base VoltageVCEO400 VCollector to Emitter VoltageVVEBO 5Emitter to Base VoltageICCollector Current (DC) 200 mAPD500 mWTotal Device Disspation TA=25C

ST 2SC4541U NPN Silicon Epitaxial Planar Transistor for power switching and power amplifier applications Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value Unit Collector Base Voltage VCBO 80 V Collector Emitter Voltage VCEO 50 V Emitter Base Voltage VEBO 6 V Collector Current IC 3 A Current IB 0.6 ABase0.5 Ptot W Total Power Dissipation1 1) Junction Te

SMD Type TransistorsNPN Transistors2SC45401.70 0.1 Features Low saturation voltage High speed switching time Small flat package0.42 0.10.46 0.1 PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SA17351.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO

SMD Type TransistorsNPN Transistors2SC4548SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=0.2A Collector Emitter Voltage VCEO=400V Complementary to 2SA17400.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 400 Collector - Emitter Voltage VCEO

SMD Type TransistorsNPN Transistors2SC45411.70 0.1 Features Low saturation voltage High speed switching time Small flat package0.42 0.10.46 0.1 PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SA17361.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO

isc Silicon NPN Power Transistor 2SC4544DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOSmall Collector Ouptut CapacitanceMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh voltage switching and amplifier applications.Color TV horizontal driver applications.Color TV chroma output applications.

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4549DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)High DC Current Gain-: h = 100(Min)@ (V = 2V , I = 1A)FE CE CLow Saturation Voltage-: V = 0.3V(Max)@ (I = 3A, I = 0.15A)CE(sat) C B100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable ope

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4546DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator, lighting inverter andgeneral purpose applications.ABSOLUTE MAX

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4542DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for high resolution display.High speed switching regulator output applications.A