2SC4572 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Ordering number:EN3252ANPN Triple Diffused Planar Silicon Transistor2SC4572800V/20mA Switching ApplicationsFeatures Package Dimensions High breakdown voltage.unit:mm Small Cob.2010C High reliability (Adoption of HVP process).[2SC4572]10.24.53.65.11.31.21 : Base0.80.42 : Collector1 2 33 : EmitterJEDEC : TO-220AB2.55 2.55EIAJ : SC-46Spe

Ordering number:EN3242NPN Triple Diffused Planar Silicon Transistor2SC4578900V/50mA Switching ApplicationsFeatures Package Dimensions High breakdown voltage.unit:mm Small Cob.2010C Wide ASO.[2SC4578] High reliability (Adoption of HVP process).10.24.53.65.11.31.21 : Base0.80.42 : Collector1 2 33 : EmitterJEDEC : TO-220AB2.55 2.55EIA

Ordering number:EN3243NPN Triple Diffused Planar Silicon Transistor2SC4579900V/20mA Switching ApplicationsFeatures Package Dimensions High breakdown voltage.unit:mm Small Cob.2010C Wide ASO.[2SC4579] High reliability (Adoption of HVP process).10.24.53.65.11.31.21 : Base0.80.42 : Collector1 2 33 : EmitterJEDEC : TO-220AB2.55 2.55EIA

DATA SHEETDATA SHEETSILICON TRANSISTOR2SC4571NPN SILICON EPITAXIAL TRANSISTORSUPER MINI MOLDDESCRIPTIONPACKAGE DIMENSIONSThe 2SC4571 is a low supply voltage transistor designed for UHF(Units: mm)OSC/MIX.2.10.1It is suitable for a high density surface mount assembly since the1.250.1transistor has been applied super mini mold package.FEATURES2 High fT : 5.

DATA SHEETDATA SHEETSILICON TRANSISTOR2SC4570NPN SILICON EPITAXIAL TRANSISTORSUPER MINI MOLDDESCRIPTIONPACKAGE DIMENSIONSThe 2SC4570 is a low supply voltage transistor designed for UHF(Units: mm)OSC/MIX.2.10.1It is suitable for a high density surface mount assembly since the1.250.1transistor has been applied super mini mold package.FEATURES2 High fT : 5.

SMD Type TransistorsNPN Transistors2SC4577SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=500mA1 2 Collector Emitter Voltage VCEO=15V+0.050.95+0.1-0.1 0.1 -0.01 Complement to 2SA17531.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - B

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4573DESCRIPTIONLow Collector Saturation VoltageCollector-Emitter Breakdown Voltage-: V = 60V (Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in humidifier , DC/DC converter andgeneral purpose applicationsAB

isc Silicon NPN Darlington Power Transistor 2SC4574DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 3ACE(sat) CHigh DC Current Gain: h = 2000(Min) @ I = 1.5A, V = 3VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power switch

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC4571DESCRIPTIONHigh Current-GainBandwidth Productf = 5.0 GHz TYP. @V = 5 V, I = 5 mA, f = 1.0 GHzT CE CLow COB0.9pF TYP. @V = 5 V, I = 0, f = 1.0 MHzCB E100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in UHF oscillator

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC4570DESCRIPTIONHigh Current-GainBandwidth Productf = 5.5 GHz TYP. @V = 5 V, I = 5 mA, f = 1.0 GHzT CE CLow COB0.7pF TYP. @V = 5 V, I = 0, f = 1.0 MHzCB E100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in UHF oscillator