2SC4596 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4596DESCRIPTIONLow Collector Saturation Voltage: V = 0.3V(Max)@ I = 3ACE(sat) CCollector-Emitter Sustaining Voltage-: V = 60V (Min)CEO(SUS)Complement to Type 2SA1757100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high sp

2SC4596E SILICON EPITAXIAL PLANNAR TRANSISTORGENERAL DESCRIPTIONHigh frequency, high power NPN transistors in a plastic envelope, primarily for use in audio and generalpurposeTO-220FQUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS MIN MAX UNITCollector-emitter voltage peak value VBE = 0VVCESM - 100 VCollector-emitter voltage (open base)VCEO - 60 VCollector current (DC)I

Ordering number:EN3144NPN Triple Diffused Planar Silicon Transistor2SC4598Switching Regulator ApplicationsFeatures Package Dimensions Surface mount type device making the followingunit:mmpossible.2069C-Reduction in the number of manufacturing pro-[2SC4598]cesses for 2SC4598-applied equipment.10.24.51.3-High density surface mount applications.-Small size of 2SC

Ordering number:EN3145NPN Triple Diffused Planar Silicon Transistor2SC4599Switching Regulator ApplicationsFeatures Package Dimensions Surface mount type device making the followingunit:mmpossible.2069C-Reduction in the number of manufacturing pro-[2SC4599]cesses for 2SC4599-applied equipment.10.24.51.3-High density surface mount applications.-Small size of 2SC

Ordering number:EN3143NPN Triple Diffused Planar Silicon Transistor2SC4597Switching Regulator ApplicationsFeatures Package Dimensions Surface mount type device making the followingunit:mmpossible.2069C-Reduction in the number of manufacturing pro-[2SC4597]cesses for 2SC4597-applied equipment.10.24.51.3-High density surface mount applications.-Small size of 2SC

2SC4593Silicon NPN EpitaxialApplicationUHF / VHF wide band amplifierOutlineCMPAK311. Emitter2. Base23. Collector2SC4593Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 15 VCollector to emitter voltage VCEO 9VEmitter to base voltage VEBO 1.5 VCollector current IC 50 mACollector power dissipation PC 100 mWJunction

2SC4591Silicon NPN EpitaxialApplicationUHF / VHF wide band amplifierOutlineMPAK311. Emitter2. Base23. Collector2SC4591Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 15 VCollector to emitter voltage VCEO 9VEmitter to base voltage VEBO 1.5 VCollector current IC 50 mACollector power dissipation PC 150 mWJunction

2SC4592Silicon NPN EpitaxialApplicationUHF / VHF wide band amplifierOutlineMPAK-42311. Collector42. Emitter3. Base4. Emitter2SC4592Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 15 VCollector to emitter voltage VCEO 9VEmitter to base voltage VEBO 1.5 VCollector current IC 50 mACollector power dissipation PC

SMD Type TransistorsNPN Transistors2SC4591SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=50mA1 2 Collector Emitter Voltage VCEO=9V+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collecto

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4595DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEODC Current Gain-: h = 60(Min)@ (V = 2V, I = 2A)FE CE CLow Saturation Voltage-: V = 0.3V(Max)@ (I = 6A, I = 0.3A)CE(sat) C B100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAP

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC4591DESCRIPTIONHigh Current-Gain Bandwidth Productf = 9.0GHz TYP. @V = 5 V, I = 20 mAT CE CLow NoiseNF = 1.2 dB TYP. @V = 5 V, I = 5 mA, f = 900 MHzCE CHigh Power GainPG = 12.5 dB TYP. @V = 5 V, I = 20 mA, f = 900 MHzCE C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and