2SC4632 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC4632
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 2 W
Tensión colector-base (Vcb): 1500 V
Tensión colector-emisor (Vce): 1200 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.01 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Producto de corriente -- ganancia — ancho de banda (ft): 6 MHz
Capacitancia de salida (Cc): 1.6 pF
Ganancia de corriente contínua (hfe): 10
Empaquetado / Estuche: TO220FI
Búsqueda de reemplazo de transistor bipolar 2SC4632
2SC4632 Datasheet (PDF)
1.1. 2sc4632ls.pdf 
Size:26K _sanyo
Ordering number : ENN3701B 2SC4632LS NPN Triple Diffused Planar Silicon Transistor 2SC4632LS 1200V / 10mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage(VCEO min=1200V). unit : mm Small Cob(typical Cob=1.6pF). 2079D Full-isolation package. [2SC4632LS] High reliability(Adoption of HVP process). 10.0 4.5 3.2 2.8
1.2. 2sc4632.pdf Size:89K _sanyo
Ordering number:EN3701A NPN Triple Diffused Planar Silicon Transistor 2SC4632 1200V/10mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage (VCEO min=1200V). unit:mm Small Cob (typical Cob=1.6pF). 2079B Full-isolation package. [2SC4632] High reliability (Adoption of HVP process). 4.5 10.0 2.8 3.2 0.9 0.7 1.2
4.1. 2sc4634.pdf Size:98K _sanyo
Ordering number:EN3703A NPN Triple Diffused Planar Silicon Transistor 2SC4634 1500V/10mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage (VCEO min=1500V). unit:mm Small Cob (typical Cob=1.5pF). 2079B Full-isolation package. [2SC4634] High reliability (Adoption of HVP process). 4.5 10.0 2.8 3.2 0.9 0.7 1.2
4.2. 2sc4637ls.pdf Size:30K _sanyo
Ordering number : ENN3706B 2SC4637LS NPN Triple Diffused Planar Silicon Transistor 2SC4637LS 1800V / 15mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage(VCEO min=1800V). unit : mm Small Cob(typical Cob=1.8pF). 2079D Full-isolation package. [2SC4637LS] High reliability(Adoption of HVP process). 10.0 4.5 3.2 2.8
4.3. 2sc4635ls.pdf Size:28K _sanyo
Ordering number : ENN3704B 2SC4635LS NPN Triple Diffused Planar Silicon Transistor 2SC4635LS 1500V / 20mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage(VCEO min=1500V). unit : mm Small Cob(typical Cob=1.9pF). 2079D Full-isolation package. [2SC4635LS] High reliability(Adoption of HVP process). 10.0 4.5 3.2 2.8
4.4. 2sc4630ls.pdf Size:27K _sanyo
Ordering number : ENN3699B 2SC4630LS NPN Triple Diffused Planar Silicon Transistor 2SC4630LS 900V / 100mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage(VCEO min=900V). unit : mm Small Cob(typical Cob=2.8pF). 2079D Full isolation package. [2SC4630LS] High reliability(Adoption of HVP process). 10.0 4.5 3.2 2.8
4.5. 2sc4634ls.pdf Size:28K _sanyo
Ordering number : ENN3703B 2SC4634LS NPN Triple Diffused Planar Silicon Transistor 2SC4634LS 1500V / 10mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage(VCEO min=1500V). unit : mm Small Cob(typical Cob=1.5pF). 2079D Full-isolation package. [2SC4634LS] High reliability(Adoption of HVP process). 10.0 4.5 3.2 2.8
4.6. 2sc4636ls.pdf Size:30K _sanyo
Ordering number : ENN3705B 2SC4636LS NPN Triple Diffused Planar Silicon Transistor 2SC4636LS 1800V / 10mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage(VCEO min=1800V). unit : mm Small Cob(typical Cob=1.4pF). 2079D Full-isolation package. [2SC4636LS] High reliability(Adoption of HVP process). 10.0 4.5 3.2 2.8
4.7. 2sc4631.pdf Size:97K _sanyo
Ordering number:EN3700A NPN Triple Diffused Planar Silicon Transistor 2SC4631 900V/300mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage (VCEO min=900V). unit:mm Small Cob (typical Cob=5.0pF). 2079B Full-isolation package. [2SC4631] High reliability (Adoption of HVP process). 4.5 10.0 2.8 3.2 0.9 0.7 1.2
4.8. 2sc4637.pdf Size:105K _sanyo
Ordering number:EN3706A NPN Triple Diffused Planar Silicon Transistor 2SC4637 1800V/15mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage (VCEO min=1800V). unit:mm Small Cob (typical Cob=1.8pF). 2079B Full-isolation package. [2SC4637] High reliability (Adoption of HVP process). 4.5 10.0 2.8 3.2 0.9 0.7 1.2
4.9. 2sc4635.pdf Size:101K _sanyo
Ordering number:EN3704A NPN Triple Diffused Planar Silicon Transistor 2SC4635 1500V/20mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage (VCEO min=1500V). unit:mm Small Cob (typical Cob=1.9pF). 2079B Full-isolation package. [2SC4635] High reliability (Adoption of HVP process). 4.5 10.0 2.8 3.2 0.9 0.7 1.2
4.10. 2sc4636.pdf Size:102K _sanyo
Ordering number:EN3705A NPN Triple Diffused Planar Silicon Transistor 2SC4636 1800V/10mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage (VCEO min=1800V). unit:mm Small Cob (typical Cob=1.4pF). 2079B Full-isolation package. [2SC4636] High reliability (Adoption of HVP process). 4.5 10.0 2.8 3.2 0.9 0.7 1.2
4.11. 2sc4631ls.pdf Size:28K _sanyo
Ordering number : ENN3700B 2SC4631LS NPN Triple Diffused Planar Silicon Transistor 2SC4631LS 900V / 300mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage(VCEO min=900V). unit : mm Small Cob(typical Cob=5.0pF). 2079D Full-isolation package. [2SC4631LS] High reliability(Adoption of HVP process). 10.0 4.5 3.2 2.8
4.12. 2sc4633ls.pdf Size:26K _sanyo
Ordering number : ENN3702B 2SC4633LS NPN Triple Diffused Planar Silicon Transistor 2SC4633LS 1200V / 30mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage(VCEO min=1200V). unit : mm Small Cob(typical Cob=2.0pF). 2079D Full-isolation package. [2SC4633LS] High reliability(Adoption of HVP process). 10.0 4.5 3.2 2.8
4.13. 2sc4633.pdf Size:89K _sanyo
Ordering number:EN3702A NPN Triple Diffused Planar Silicon Transistor 2SC4633 1200V/30mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage (VCEO min=1200V). unit:mm Small Cob (typical Cob=2.0pF). 2079B Full-isolation package. [2SC4633] High reliability (Adoption of HVP process). 4.5 10.0 2.8 3.2 0.9 0.7 1.2
4.14. 2sc4630.pdf Size:95K _sanyo
Ordering number:EN3699A NPN Triple Diffused Planar Silicon Transistor 2SC4630 900V/100mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage (VCEO min=900V). unit:mm Small Cob (typical Cob=2.8pF). 2079B Full isolation package. [2SC4630] High reliability (Adoption of HVP process). 4.5 10.0 2.8 3.2 0.9 0.7 1.2
4.15. 2sc4638.pdf Size:62K _panasonic
Power Transistors 2SC4638 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 10.0 0.2 4.2 0.2 Features 5.5 0.2 2.7 0.2 High-speed switching High collector to base voltage VCBO Low collector to emitter saturation voltage VCE(sat) ? 3.1 0.1 Full-pack package which can be installed to the heat sink with one screw Absolute Maximum Ratin
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