2SC4657 Todos los transistores

 8.1. Size:160K  sanyo
 2sc4650.pdf

Ordering number EN3581 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1787/2SC4650 High-Definition CRT Display Video Output Applications Features Package Dimensions High breakdown voltage VCEO 200V. unit mm Small reverse transfer capacitance and excellent high 2064 frequency characteristic [2SA1787/2SC4650] Cre=1.2pF (NPN), 1.7pF (PNP). Adoption of FBET processes

 8.2. Size:39K  panasonic
 2sc4656 e.pdf

Transistor 2SC4656 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SA1791 1.6 0.15 0.4 0.8 0.1 0.4 Features Small collector output capacitance Cob. 1 SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. 3 2 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit 0.

 8.3. Size:35K  panasonic
 2sc4656.pdf

Transistor 2SC4656 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SA1791 1.6 0.15 0.4 0.8 0.1 0.4 Features Small collector output capacitance Cob. 1 SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. 3 2 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit 0.

 8.4. Size:55K  panasonic
 2sc4655.pdf

Transistor 2SC4655 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm 1.6 0.15 0.4 0.8 0.1 0.4 Features Optimum for RF amplification, oscillation, mixing, and IF of FM/ 1 AM radios. SS-Mini type package, allowing downsizing of the equipment 3 and automatic insertion through the tape packing. 2 Absolute Maximum Ratings (Ta=25 C) 0.2 0.1 Parameter

 8.5. Size:59K  panasonic
 2sc4655 e.pdf

Transistor 2SC4655 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm 1.6 0.15 0.4 0.8 0.1 0.4 Features Optimum for RF amplification, oscillation, mixing, and IF of FM/ 1 AM radios. SS-Mini type package, allowing downsizing of the equipment 3 and automatic insertion through the tape packing. 2 Absolute Maximum Ratings (Ta=25 C) 0.2 0.1 Parameter

 8.6. Size:73K  no
 2sc4652 2sc4847 2sc4850.pdf

 8.7. Size:186K  inchange semiconductor
 2sc4652.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4652 DESCRIPTION Low Collector Saturation Voltage Collector-Emitter Breakdown Voltage- V = 120V (Min) (BR)CEO Good Linearity of h FE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in humidifier , DC/DC converter and genera