2SC4658
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC4658
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 15
W
Tensión colector-base (Vcb): 100
V
Tensión colector-emisor (Vce): 80
V
Tensión emisor-base (Veb): 7
V
Corriente del colector DC máxima (Ic): 5
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 120
MHz
Capacitancia de salida (Cc): 80
pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: X53
Búsqueda de reemplazo de transistor bipolar 2SC4658
2SC4658
Datasheet (PDF)
8.1. Size:160K sanyo
2sc4650.pdf
Ordering number:EN3581PNP/NPN Epitaxial Planar Silicon Transistors2SA1787/2SC4650High-Definition CRT DisplayVideo Output ApplicationsFeatures Package Dimensions High breakdown voltage : VCEO 200V.unit:mm Small reverse transfer capacitance and excellent high2064frequency characteristic:[2SA1787/2SC4650]Cre=1.2pF (NPN), 1.7pF (PNP). Adoption of FBET processes
8.2. Size:39K panasonic
2sc4656 e.pdf
Transistor2SC4656Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SA17911.6 0.150.4 0.8 0.1 0.4FeaturesSmall collector output capacitance Cob.1SS-Mini type package, allowing downsizing of the equipmentand automatic insertion through the tape packing.32Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit 0.
8.3. Size:35K panasonic
2sc4656.pdf
Transistor2SC4656Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SA17911.6 0.150.4 0.8 0.1 0.4FeaturesSmall collector output capacitance Cob.1SS-Mini type package, allowing downsizing of the equipmentand automatic insertion through the tape packing.32Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit 0.
8.4. Size:55K panasonic
2sc4655.pdf
Transistor2SC4655Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm1.6 0.150.4 0.8 0.1 0.4FeaturesOptimum for RF amplification, oscillation, mixing, and IF of FM/1AM radios.SS-Mini type package, allowing downsizing of the equipment3and automatic insertion through the tape packing.2Absolute Maximum Ratings (Ta=25C)0.2 0.1Parameter
8.5. Size:59K panasonic
2sc4655 e.pdf
Transistor2SC4655Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm1.6 0.150.4 0.8 0.1 0.4FeaturesOptimum for RF amplification, oscillation, mixing, and IF of FM/1AM radios.SS-Mini type package, allowing downsizing of the equipment3and automatic insertion through the tape packing.2Absolute Maximum Ratings (Ta=25C)0.2 0.1Parameter
8.7. Size:186K inchange semiconductor
2sc4652.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4652DESCRIPTIONLow Collector Saturation VoltageCollector-Emitter Breakdown Voltage-: V = 120V (Min)(BR)CEOGood Linearity of hFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in humidifier , DC/DC converter andgenera
Otros transistores... 2N3200
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