2SC4682 Todos los transistores

 

2SC4682 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC4682

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.9 W

Tensión colector-base (Vcb): 30 V

Tensión colector-emisor (Vce): 30 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 150 MHz

Capacitancia de salida (Cc): 30 pF

Ganancia de corriente contínua (hfe): 800

Empaquetado / Estuche: TO92

Búsqueda de reemplazo de transistor bipolar 2SC4682

 

2SC4682 Datasheet (PDF)

1.1. 2sc4682.pdf Size:177K _toshiba

2SC4682
2SC4682



4.1. 2sc4688.pdf Size:177K _toshiba

2SC4682
2SC4682



4.2. 2sc4683.pdf Size:179K _toshiba

2SC4682
2SC4682



 4.3. 2sc4686 2sc4686a.pdf Size:135K _toshiba

2SC4682
2SC4682

2SC4686,2SC4686A TOSHIBA Transistor Silicon NPN Triple Diffused Planar Type 2SC4686, 2SC4686A TV Dynamic Focus Applications Unit: mm High-Voltage Switching Applications High-Voltage Amplifier Applications • High voltage: VCEO = 1200 V (max) • Small collector output capacitance: Cob = 2.2 pF (typ.) (VCB = 100 V) Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating U

4.4. 2sc4689.pdf Size:176K _toshiba

2SC4682
2SC4682



 4.5. 2sc4685.pdf Size:185K _toshiba

2SC4682
2SC4682



4.6. 2sc4684.pdf Size:195K _toshiba

2SC4682
2SC4682

2SC4684 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4684 Strobe Flash Applications Unit: mm Medium Power Amplifier Applications • High DC current gain : h = 800 to 3200 (V = 2 V, I = 0.5 A) FE (1) CE C : h = 250 (V = 2 V, I = 4 A) FE (2) CE C • Low collector saturation voltage : V = 0.5 V (max) (I = 4 A, I = 40 mA) CE (sat) C B • High power dissipation : P

4.7. 2sc4686.pdf Size:223K _toshiba

2SC4682
2SC4682



4.8. 2sc4686a.pdf Size:207K _toshiba

2SC4682
2SC4682



4.9. 2sc4681.pdf Size:68K _toshiba

2SC4682
2SC4682

2SC4681 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4681 Strobe Flash Applications Unit: mm Medium Power Amplifier Applications • Excellent hFE linearity : h = 200 to 600 (V = 2 V, I = 0.5 A) FE (1) CE C : h = 140 (min), 200 (typ.) (V = 2 V, I = 3 A) FE (2) CE C • Low collector saturation voltage : V = 0.5 V (max) (I = 3 A, I = 60 mA) CE (sat) C B • Compleme

4.10. 2sc4680.pdf Size:35K _hitachi

2SC4682
2SC4682

2SC4680 Silicon NPN Epitaxial Application VHF / UHF high frequency switching Features • Low Ron and high performance for RF switch. • Capable of high density mounting. Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC4680 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 12 V Collector to emitter voltage VCEO 8V Emitter t

4.11. 2sc4688.pdf Size:123K _jmnic

2SC4682
2SC4682

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4688 DESCRIPTION · ·With TO-3PFM package ·Complement to type 2SA1803 APPLICATIONS ·Power amplifier applications ·Recommend for 40W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PFM) and symbol Maximum absolu

4.12. 2sc4689.pdf Size:110K _jmnic

2SC4682
2SC4682

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4689 DESCRIPTION ·With TO-3PFM package ·Complementary to 2SA1804 ·Recommend for 55W high fidelity audio frequency amplifier APPLICATIONS ·Power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PFM) and symbol Absolute maximum ratings(Ta=℃

4.13. 2sc4687.pdf Size:150K _jmnic

2SC4682
2SC4682

JMnic Product Specification Silicon NPN Power Transistors 2SC4687 DESCRIPTION ·With TO-3PN package ·High breakdown voltage ·Fast switching speed ·Wide area of safe operation APPLICATIONS ·For switching regulator applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute ma

4.14. 2sc4680.pdf Size:586K _kexin

2SC4682
2SC4682

SMD Type Transistors NPN Transistors 2SC4680 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=50mA 1 2 ● Collector Emitter Voltage VCEO=8V +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 12 Collect

4.15. 2sc4688.pdf Size:195K _inchange_semiconductor

2SC4682
2SC4682

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4688 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V = 80V(Min) (BR)CEO ·Collector-Emitter Saturation Voltage- : V = 2.0V(Max)@ I = 5A CE(sat) C ·Complement to Type 2SA1803 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier ap

4.16. 2sc4689.pdf Size:197K _inchange_semiconductor

2SC4682
2SC4682

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4689 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V = 120V(Min) (BR)CEO ·Collector-Emitter Saturation Voltage- : V = 2.0V(Max)@ I = 6A CE(sat) C ·Complement to Type 2SA1804 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier a

4.17. 2sc4687.pdf Size:187K _inchange_semiconductor

2SC4682
2SC4682

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4687 DESCRIPTION ·Low Collector Saturation Voltage ·Collector-Emitter Breakdown Voltage- : V = 400V (Min) (BR)CEO ·Good Linearity of h FE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in humidifier , DC/DC converter and general purpose applications A

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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