2SC4687 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

JMnic Product SpecificationSilicon NPN Power Transistors 2SC4687 DESCRIPTION With TO-3PN package High breakdown voltage Fast switching speed Wide area of safe operation APPLICATIONS For switching regulator applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute ma

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4687DESCRIPTIONLow Collector Saturation VoltageCollector-Emitter Breakdown Voltage-: V = 400V (Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in humidifier , DC/DC converter andgeneral purpose applicationsA

2SC4684 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4684 Strobe Flash Applications Unit: mm Medium Power Amplifier Applications High DC current gain : h = 800 to 3200 (V = 2 V, I = 0.5 A) FE (1) CE C: h = 250 (V = 2 V, I = 4 A) FE (2) CE C Low collector saturation voltage : V = 0.5 V (max) (I = 4 A, I = 40 mA) CE (sat) C B High power dissipation : P

2SC4681 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4681 Strobe Flash Applications Unit: mm Medium Power Amplifier Applications Excellent hFE linearity : h = 200 to 600 (V = 2 V, I = 0.5 A) FE (1) CE C: h = 140 (min), 200 (typ.) (V = 2 V, I = 3 A) FE (2) CE C Low collector saturation voltage : V = 0.5 V (max) (I = 3 A, I = 60 mA) CE (sat) C B Compleme

2SC4686,2SC4686A TOSHIBA Transistor Silicon NPN Triple Diffused Planar Type 2SC4686, 2SC4686A TV Dynamic Focus Applications Unit: mmHigh-Voltage Switching Applications High-Voltage Amplifier Applications High voltage: VCEO = 1200 V (max) Small collector output capacitance: Cob = 2.2 pF (typ.) (VCB = 100 V) Maximum Ratings (Tc = 25C) Characteristics Symbol Rating U

2SC4680Silicon NPN EpitaxialApplicationVHF / UHF high frequency switchingFeatures Low Ron and high performance for RF switch. Capable of high density mounting.OutlineMPAK311. Emitter2. Base23. Collector2SC4680Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 12 VCollector to emitter voltage VCEO 8VEmitter t

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4689 DESCRIPTION With TO-3PFM package Complementary to 2SA1804 Recommend for 55W high fidelity audio frequency amplifier APPLICATIONS Power amplifier applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3PFM) and symbol Absolute maximum ratings(Ta=

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4688 DESCRIPTION With TO-3PFM package Complement to type 2SA1803 APPLICATIONS Power amplifier applications Recommend for 40W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3PFM) and symbol Maximum absolu

SMD Type TransistorsNPN Transistors2SC4680SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=50mA1 2 Collector Emitter Voltage VCEO=8V+0.1+0.050.95 -0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 12 Collect

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4689DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 2.0V(Max)@ I = 6ACE(sat) CComplement to Type 2SA1804100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier a

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4688DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 2.0V(Max)@ I = 5ACE(sat) CComplement to Type 2SA1803100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier ap