2SC4692 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SC4692Maximum Collector Dissipation Curve6040200 50 100 150Case Temperature TC (C)Area of Safe Operation20(100 V, 20 A)f = 31.5 kHz Ta = 25C16For picture tube arcing128(800 V, 5 A)40.5 mA0 400 800 1,200 1,600 2,000Collector to emitter Voltage VCE (V)Typical Output Characteristics108642TC = 25CIB = 00 2 4 6 8 10Collector to emi

2SC4690 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC4690 Power Amplifier Applications Unit: mm High breakdown voltage: V = 140 V (min) CEO Complementary to 2SA1805 Suitable for use in 70-W high fidelity audio amplifiers output stage Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 140 VCollector-emitter v

Ordering number:EN3580ANPN Epitaxial Planar Silicon Darlington Transistor2SC4696Driver ApplicationsApplications Package Dimensions Motor drivers, printer hammer drivers. unit:mm2064AFeatures [2SC4696]2.51.45 Darlington connection.6.9 1.0 On-chip Zener diode of 90 10V between collectorand base. High DC current gain. High inductive load handling capa

Ordering number:EN3486NPN Epitaxial Planar Silicon Transistor2SC4695Low-Frequency General-Purpose Amplifier,Muting ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm High DC current gain.2018B High VEBO (VEBO 25V).[2SC4695] High reverse hFE (150 typ). Small ON resistance [Ron=1 (IB=5mA)]. 0.40.163 Very small-sized pac

Ordering number:EN3485NPN Epitaxial Planar Silicon Transistor2SC4694Low-Frequency General-Purpose Amplifier,Muting ApplicationsFeatures Package Dimensions Adoption of MBIT process.unit:mm High DC current gain.2059B High VEBO (VEBO 25V).[2SC4694] High reverse hFE (150 typ).0.3 Small ON resistance [Ron=1 (IB=5mA)]. 0.153 Very small-sized pac

Transistor2SC4691Silicon NPN epitaxial planer typeFor high speed switchingUnit: mm1.6 0.150.4 0.8 0.1 0.4FeaturesHigh-speed switching.1Low collector to emitter saturation voltage VCE(sat).SS-Mini type package, allowing downsizing of the equipment3and automatic insertion through the tape packing.2Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit

Transistor2SC4691Silicon NPN epitaxial planer typeFor high speed switchingUnit: mm1.6 0.150.4 0.8 0.1 0.4FeaturesHigh-speed switching.1Low collector to emitter saturation voltage VCE(sat).SS-Mini type package, allowing downsizing of the equipment3and automatic insertion through the tape packing.2Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit

2SC4693Silicon NPN Epitaxial PlanarApplicationVHF Wide band amplifierFeatures High gain bandwidth productfT = 2.5 GHz Typ. Large collector power dissipationPC = 900 mWOutlineTO-92MOD1. Emitter2. Collector3. Base3212SC4693Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VC

JMnic Product SpecificationSilicon NPN Power Transistors 2SC4690 DESCRIPTION With TO-3PFM package Complementary to 2SA1805 Recommend for 70W high fidelity audio frequency amplifier output stage APPLICATIONS Power amplifier applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PFM) and symbol 3 EmitterAbsolute maximum ratings(Ta

SMD Type TransistorsNPN Transistors2SC4695SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features Collector Current Capability IC=500mA Collector Emitter Voltage VCEO=20V1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Colle

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4690DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 2.0V(Max)@ I = 7ACE(sat) CComplement to Type 2SA1805100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier a