2SC474 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC474
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 70 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 80 MHz
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta: TO5
Búsqueda de reemplazo de transistor bipolar 2SC474
2SC474 Datasheet (PDF)
2sc4747.pdf
2SC4747Silicon NPN Triple DiffusedApplicationCharacter display horizontal deflection outputFeature High breakdown voltageVCBO = 1500 V High speed switchingtf 0.3 sOutlineTO-3PFM1. Base 2. Collector 3. Emitter1232SC4747Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 1500 VCollector to emitter volta
2sc4745.pdf
2SC4745Silicon NPN Triple DiffusedCharacter Display Horizontal Deflection OutputFeatureTO-3PFM High speed switchingtf = 0.2 s typ High breakdown voltageVCBO = 1500 V Isolated package; TO-3PFMAbsolute Maximum Ratings (Ta = 25C)Item Symbol Rating Unit1231. Base2. CollectorCollector to b
2sc4742.pdf
2SC4742Silicon NPN Triple DiffusedApplicationCharacter display horizontal deflection outputFeature High breakdown voltageVCES = 1500 V Built-in damper diode typeOutlineTO-3P211. Base ID2. Collector (Flange) 3. Emitter13232SC4742Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to emitter voltage VCES 1500 VEmitter to
2sc4747.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4747 DESCRIPTION With TO-3PFM package High speed switching High breakdown voltage APPLICATIONS Character display horizontal deflection output PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3PFM) and symbol Absolute maximum ratings(Ta=) SYMBOL PARAMETER
2sc4742.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4742 DESCRIPTION With TO-3PN package Built-in damper diode High breakdown voltage APPLICATIONS Character display horizontal deflection output PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterFig.1 simplified outline (TO-3PN) and symbol Absolute maximum rati
2sc4747.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4747DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for character display horizontal deflectionoutput stage applicationsABSOLUTE MAXIMUM RATINGS(T =25)
2sc4744.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4744DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedBuilt-in Damper Diode100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for character display horizontal deflectionoutput stage applicationsABSOLUTE
2sc4745.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4745DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for character display horizontal deflectionoutput stage applicationsABSOLUTE MAXIMUM RATINGS(T =25)
2sc4746.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4746DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for character display horizontal deflectionoutput stage applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)
2sc4743.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4743DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for character display horizontal deflectionoutput stage applicationsABSOLUTE MAXIMUM RATINGS(T =25)
2sc4742.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4742DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CESBuilt-in Damper Diode100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for character display horizontal deflectionoutput stage applicationsABSOLUTE MAXIMUM RATINGS(Ta=25
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: BDX10C
History: BDX10C
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050