2SC4745
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC4745
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 50
W
Tensión colector-base (Vcb): 1500
V
Tensión colector-emisor (Vce): 800
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 6
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 15
Paquete / Cubierta:
TO3PFM
Búsqueda de reemplazo de transistor bipolar 2SC4745
2SC4745
Datasheet (PDF)
..1. Size:299K hitachi
2sc4745.pdf 
2SC4745Silicon NPN Triple DiffusedCharacter Display Horizontal Deflection OutputFeatureTO-3PFM High speed switchingtf = 0.2 s typ High breakdown voltageVCBO = 1500 V Isolated package; TO-3PFMAbsolute Maximum Ratings (Ta = 25C)Item Symbol Rating Unit1231. Base2. CollectorCollector to b
..2. Size:188K inchange semiconductor
2sc4745.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4745DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for character display horizontal deflectionoutput stage applicationsABSOLUTE MAXIMUM RATINGS(T =25)
8.1. Size:32K hitachi
2sc4747.pdf
2SC4747Silicon NPN Triple DiffusedApplicationCharacter display horizontal deflection outputFeature High breakdown voltageVCBO = 1500 V High speed switchingtf 0.3 sOutlineTO-3PFM1. Base 2. Collector 3. Emitter1232SC4747Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 1500 VCollector to emitter volta
8.3. Size:32K hitachi
2sc4742.pdf
2SC4742Silicon NPN Triple DiffusedApplicationCharacter display horizontal deflection outputFeature High breakdown voltageVCES = 1500 V Built-in damper diode typeOutlineTO-3P211. Base ID2. Collector (Flange) 3. Emitter13232SC4742Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to emitter voltage VCES 1500 VEmitter to
8.4. Size:90K jmnic
2sc4747.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4747 DESCRIPTION With TO-3PFM package High speed switching High breakdown voltage APPLICATIONS Character display horizontal deflection output PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3PFM) and symbol Absolute maximum ratings(Ta=) SYMBOL PARAMETER
8.5. Size:107K jmnic
2sc4742.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4742 DESCRIPTION With TO-3PN package Built-in damper diode High breakdown voltage APPLICATIONS Character display horizontal deflection output PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterFig.1 simplified outline (TO-3PN) and symbol Absolute maximum rati
8.6. Size:188K inchange semiconductor
2sc4747.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4747DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for character display horizontal deflectionoutput stage applicationsABSOLUTE MAXIMUM RATINGS(T =25)
8.7. Size:221K inchange semiconductor
2sc4744.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4744DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedBuilt-in Damper Diode100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for character display horizontal deflectionoutput stage applicationsABSOLUTE
8.8. Size:188K inchange semiconductor
2sc4746.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4746DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for character display horizontal deflectionoutput stage applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)
8.9. Size:187K inchange semiconductor
2sc4743.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4743DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for character display horizontal deflectionoutput stage applicationsABSOLUTE MAXIMUM RATINGS(T =25)
8.10. Size:186K inchange semiconductor
2sc4742.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4742DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CESBuilt-in Damper Diode100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for character display horizontal deflectionoutput stage applicationsABSOLUTE MAXIMUM RATINGS(Ta=25
Otros transistores... 2SA1803O
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.
