2SC4765 Todos los transistores

 ..1. Size:191K  inchange semiconductor
 2sc4765.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4765 DESCRIPTION High Breakdown Voltage- V = 1700V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Horizontal deflection output for medium resolution display. ABS

 8.1. Size:100K  sanyo
 2sc4769.pdf

Ordering number EN3665 NPN Triple Diffused Planar Silicon Transistor 2SC4769 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High breakdown voltage (VCBO=1500V). 2039D High reliability (Adoption of HVP process). [2SC4769] Adoption of MBIT process. 16.0 5.6 3.4 On-chip

 8.2. Size:49K  panasonic
 2sc4767 e.pdf

Transistor 2SC4767 Silicon NPN epitaxial planer type For high-frequency power amplification Unit mm 5.0 0.2 4.0 0.2 Features High transition frequency fT. Output of 0.6W is obtained in the VHF band (f=175MHz). 0.7 0.1 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.15 +0.15 Collector to base voltage VCBO 36 V 0.45 0.1 0.45 0.1 1.27 1.27 Collector

 8.3. Size:103K  jmnic
 2sc4764.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4764 DESCRIPTION With TO-3P(H)IS package High speed High voltage Low saturation voltage Bult-in damper type APPLICATIONS Horizontal deflection output for medium resolution display PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol Abs

 8.4. Size:106K  jmnic
 2sc4763.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4763 DESCRIPTION With TO-3P(H)IS package High speed High voltage Low saturation voltage Bult-in damper type APPLICATIONS Horizontal deflection output for medium resolution display PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol Abs

 8.5. Size:114K  jmnic
 2sc4762.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4762 DESCRIPTION With TO-3P(H)IS package High speed High voltage Low saturation voltage Bult-in damper type APPLICATIONS Horizontal deflection output for medium resolution display PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol Abs

 8.6. Size:119K  jmnic
 2sc4769.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4769 DESCRIPTION With TO-3PML package High breakdown voltage, high reliability. High speed Built in damper diode APPLICATIONS Ultrahigh-definition color display Horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3P

 8.7. Size:191K  inchange semiconductor
 2sc4761.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4761 DESCRIPTION High Breakdown Voltage- V = 1700V (Min) CBO High Switching Speed Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Horizontal deflection output for high resolution display. High speed switching power s

 8.8. Size:192K  inchange semiconductor
 2sc4764.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4764 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Horizontal deflection output for medium resolution display. ABS

 8.9. Size:192K  inchange semiconductor
 2sc4763.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4763 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Horizontal deflection output for medium resolution display. ABS

 8.10. Size:192K  inchange semiconductor
 2sc4762.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4762 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Horizontal deflection output for medium resolution display. ABS

 8.11. Size:192K  inchange semiconductor
 2sc4766.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4766 DESCRIPTION High Breakdown Voltage- V = 1700V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Horizontal deflection output for medium resolution display. ABS

 8.12. Size:196K  inchange semiconductor
 2sc4769.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4769 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Built-in Damper Diode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for ultrahigh-definition color display horizontal deflection