2SC477 Todos los transistores

 0.1. Size:98K  sanyo
 2sc4770.pdf

Ordering number EN3666A NPN Triple Diffused Planar Silicon Transistor 2SC4770 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High breakdown voltage (VCBO=1500V). 2039D High reliability (Adoption of HVP process). [2SC4770] Adoption of MBIT process. 16.0 5.6 3.4 3.1 2.8 2

 0.2. Size:76K  rohm
 2sc4774 2sc4713k.pdf

2SC4774 / 2SC4713K Transistors High frequency amplifier transistor, RF switching (6V, 50mA) 2SC4774 / 2SC4713K Features 2SC4774 1) Very low output-on resistance (Ron). 2) Low capacitance. 1.25 2.1 Absolute maximum ratings (Ta=25 C) Parameter Symbol Limits Unit Collector-base voltage VCBO 12 V Collector-emitter voltage VCEO 6 V 0.1Min. Emitter-base voltage VEBO 3 V E

 0.3. Size:1405K  rohm
 2sc4774.pdf

 0.4. Size:234K  utc
 2sc4774.pdf

UNISONIC TECHNOLOGIES CO., LTD 2SC4774 NPN SILICON TRANSISTOR HIGH FREQUENCY AMPLIFIER TRANSISTOR, RF SWITCHING (6V, 50mA) FEATURES * Very low output-on resistance (RON). * Low capacitance. ORDERING INFORMATION Order Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC4774L-AL3-R 2SC4774G-AL3-R SOT-323 E B C Tape Reel MARKING C47 L Lead Free

 0.5. Size:51K  jmnic
 2sc4770.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4770 DESCRIPTION With TO-3PML package High breakdown voltage, high reliability. High speed APPLICATIONS Ultrahigh-definition color display Horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Maximum abso

 0.6. Size:118K  chenmko
 2sc4774gp.pdf

CHENMKO ENTERPRISE CO.,LTD 2SC4774GP SURFACE MOUNT High frequency amplifier Transistor VOLTAGE 6 Volts CURRENT 50 mAmpere APPLICATION * Small Signal Amplifier . FEATURE SC-70/SOT-323 * Surface mount package. (SC-70/SOT-323) * Low saturation voltage VCE(sat)=0.3V(max.) * Low cob. Cob=1.0pF(Typ.) * PC= 200mW (mounted on ceramic substrate). * High saturation current capability. 0.65

 0.7. Size:194K  inchange semiconductor
 2sc4770.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4770 DESCRIPTION High Breakdown Voltage- V = 1500V(Min) (BR)CBO High Switching Speed High Reliability 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Ultrahigh-definition color display horizontal deflection output applications ABSOLUTE MAXI