2SC4796 Todos los transistores

 ..1. Size:20K  hitachi
 2sc4796.pdf

 ..2. Size:188K  inchange semiconductor
 2sc4796.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4796 DESCRIPTION High Breakdown Voltage- V = 1700V(Min) (BR)CBO High Switching Speed High Reliability 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Ultrahigh-definition color display horizontal deflection output applications ABSOLUTE MAXI

 8.1. Size:111K  toshiba
 2sc4793.pdf

2SC4793 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4793 Power Amplifier Applications Unit mm Driver Stage Amplifier Applications High transition frequency fT = 100 MHz (typ.) Complementary to 2SA1837 Maximum Ratings (Tc = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 230 V Collector-emitter voltage VCEO 230 V Emitter-base voltage VEBO

 8.2. Size:46K  utc
 2sc4793.pdf

UNISONIC TECHNOLOGIES CO., LTD 2SC4793 NPN SILICON TRANSISTOR NPN SILICON TRANSISTOR FEATURES *High transition frequency *Power amplifier applications *Driver stage amplifier applications 1 TO-220F *Pb-free plating product number 2SC4793L ORDERING INFORMATION Order Number Pin Assignment Package Packing Normal Lead Free Plating 1 2 3 2SC4793-x-TF3-T 2SC4793L-x-TF3-T T

 8.3. Size:20K  hitachi
 2sc4797.pdf

 8.4. Size:70K  hitachi
 2sc4791.pdf

2SC4791 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 10 GHz Typ. High gain, low noise figure PG = 15.5 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Outline MPAK-4 2 3 1 1. Collector 4 2. Emitter 3. Base 4. Emitter 2SC4791 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage

 8.5. Size:55K  no
 2sc4799.pdf

 8.6. Size:38K  jmnic
 2sc4793.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4793 DESCRIPTION With TO-220F package Complement to type 2SA1837 High transition frequency APPLICATIONS Power amplifier applications Driver stage amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings

 8.7. Size:853K  jilin sino
 2sc4793.pdf

NPN Silicon NPN Triple Diffused Transistor R 2SC4793 APPLICATIONS Power Amplifier Applications FEATURES V =230V (min) High collector voltage V =230V (min) CEO CEO 2SA1837 Complementary to 2SA1937 High transition frequency fT=100MHz(Typ.) f T=100MHz(Typ.) RoHS product RoHS Package TO-220MF ORDER MESSAGE Order codes Mark

 8.8. Size:479K  blue-rocket-elect
 2sc4793d.pdf

2SC4793D(BR3DA4793D) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-252 NPN Silicon NPN transistor in a TO-252 Plastic Package. / Features , 2SA1837D(BR3CA1837D) High fT, complementary pair with 2SA1837D(BR3CA1837D). / Applications Power amplifier and d

 8.9. Size:171K  nell
 2sc4793af.pdf

RoHS RoHS 2SC4793AF SEMICONDUCTOR Nell High Power Products High Frequency NPN Power Transistor 1A/230V/20W FEATURES High transition frequency fT = 100MHz (typ.) Complementary to 2SA1837AF TO-220F package which can be B C E installed to the heat sink with one screw TO-220F APPLICATIONS (2SC4793AF) Power amplifier Driver stage amplifier (2) C B (1) NPN E(3) ABSOLUT

 8.10. Size:430K  kexin
 2sc4793.pdf

DIP Type Transistors Transistors NPN Transistors 2SC4793 Features TO-220MF Units mm High collector voltage VCEO=230V (min) Complementary to 2SA1837 High transition frequency fT=100MHz(Typ.) RoHS product Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 230 V Collector - Emitter Voltage VCEO 230 Emitt

 8.11. Size:886K  jsmsemi
 2sc4793.pdf

 8.12. Size:706K  cn evvo
 2sc4793.pdf

Silicon PNP transistor Power Amplifier Applications Complementary to 2SA1837 High collector voltage VCEO=230V (min) Note Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operatin

 8.13. Size:95K  cn minos
 2sc4793.pdf

2SC4793 Minos Silicon NPNTriple diffusionType 2SC4793 Power Amplifier Applications Complementaryto 2SA1837 Highcollector voltage VCEO=230V (min) Note Using continuously under heavy loads (e.g. theapplication of hightemperature/current/voltageandthe significant change intemperature, etc.) may causethis product todecrease inthe reliability significantly even if the operating conditions

 8.14. Size:211K  inchange semiconductor
 2sc4793.pdf

isc Silicon NPN Power Transistor 2SC4793 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 230V(Min) (BR)CEO High Current-Gain Bandwidth Product Complement to Type 2SA1837 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 )

 8.15. Size:185K  inchange semiconductor
 2sc4799.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4799 DESCRIPTION Low Collector Saturation Voltage Collector-Emitter Breakdown Voltage- V = 80V (Min) (BR)CEO Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in humidifier , DC/DC converter and general purpose applications AB