2SC4806 Todos los transistores

 ..1. Size:191K  inchange semiconductor
 2sc4806.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4806 DESCRIPTION High Breakdown Voltage- V = 1700V(Min) CBO High Switching Speed Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Horizontal deflection output for high resolution display. High speed switching power su

 8.1. Size:40K  panasonic
 2sc4809 e.pdf

Transistor 2SC4809 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing Unit mm 1.6 0.15 0.4 0.8 0.1 0.4 Features High transition frequency fT. 1 Small collector output capacitance Cob and common base reverse transfer capacitance Crb. 3 SS-Mini type package, allowing downsizing of the equipment 2 and automatic insertion through the tape packi

 8.2. Size:40K  panasonic
 2sc4805 e.pdf

Transistor 2SC4805 Silicon NPN epitaxial planer type For 2GHz band low-noise amplification Unit mm 2.1 0.1 0.425 1.25 0.1 0.425 Features High transition frequency fT. 1 S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit 0.

 8.3. Size:36K  panasonic
 2sc4805.pdf

Transistor 2SC4805 Silicon NPN epitaxial planer type For 2GHz band low-noise amplification Unit mm 2.1 0.1 0.425 1.25 0.1 0.425 Features High transition frequency fT. 1 S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit 0.

 8.4. Size:41K  panasonic
 2sc4808 e.pdf

Transistor 2SC4808 Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit mm 1.6 0.15 0.4 0.8 0.1 0.4 Features Low noise figure NF. 1 High gain. 3 High transition frequency fT. SSMini type package, allowing downsizing of the equipment and 2 automatic insertion through the tape packing. 0.2 0.1 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Rat

 8.5. Size:36K  panasonic
 2sc4809.pdf

Transistor 2SC4809 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing Unit mm 1.6 0.15 0.4 0.8 0.1 0.4 Features High transition frequency fT. 1 Small collector output capacitance Cob and common base reverse transfer capacitance Crb. 3 SS-Mini type package, allowing downsizing of the equipment 2 and automatic insertion through the tape packi

 8.6. Size:37K  panasonic
 2sc4808.pdf

Transistor 2SC4808 Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit mm 1.6 0.15 0.4 0.8 0.1 0.4 Features Low noise figure NF. 1 High gain. 3 High transition frequency fT. SSMini type package, allowing downsizing of the equipment and 2 automatic insertion through the tape packing. 0.2 0.1 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Rat

 8.7. Size:46K  hitachi
 2sc4807.pdf

2SC4807 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 4.4 GHz Typ High output power 1 dB Power compression point Pcp = 24 dBm Typ at VCE = 5V , IC = 100 mA , f = 900 MHz Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SC4807 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Rati

 8.8. Size:143K  jmnic
 2sc4804.pdf

JMnic Product Specification Silicon NPN Power Transistors 2SC4804 DESCRIPTION With ITO-220 package High breakdown voltage APPLICATIONS Switching regulator and high voltage switching applications High speed DC-DC converter applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute maximum ratings(Ta

 8.9. Size:951K  kexin
 2sc4807.pdf

SMD Type Transistors NPN Transistors 2SC4807 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=0.2A Collector Emitter Voltage VCEO=15V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 15 V Emitter - Base Voltage VE

 8.10. Size:185K  inchange semiconductor
 2sc4807.pdf

INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4807 DESCRIPTION High Gain-Bandwidth Product f = 4.4 GHz TYP. T High Output Power 1 dB Power compression point P = 24 dBm TYP. cp @ V = 5V , I = 100 mA , f = 900 MHz CE C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for VHF UHF wide

 8.11. Size:114K  inchange semiconductor
 2sc4804.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4804 DESCRIPTION With ITO-220 package High breakdown voltage APPLICATIONS Switching regulator and high voltage switching applications High speed DC-DC converter applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute m