2SC484 Todos los transistores

 ..1. Size:743K  1
 2sc482 2sc483 2sc484 2sc485 2sc486 2sc487 2sc488 2sc489.pdf

 0.1. Size:467K  toshiba
 2sc4840.pdf

2SC4840 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4840 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S 2 = 13dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V

 0.2. Size:468K  toshiba
 2sc4842.pdf

2SC4842 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4842 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S 2 = 14dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V C

 0.3. Size:469K  toshiba
 2sc4844.pdf

2SC4844 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4844 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.8dB, S 2 = 9.5dB (f = 2 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V

 0.4. Size:468K  toshiba
 2sc4843.pdf

2SC4843 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4843 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S 2 = 15.5dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5

 0.5. Size:465K  toshiba
 2sc4841.pdf

2SC4841 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4841 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.8dB, S 2 = 8.5dB (f = 2 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V

 0.6. Size:39K  rohm
 2sc4849.pdf

2SC4849 Transistors Transistors 2SC5147 (94L-712-C342) (96-736-C358) 302

 0.7. Size:73K  no
 2sc4652 2sc4847 2sc4850.pdf

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 2sc4848.pdf

 0.9. Size:186K  inchange semiconductor
 2sc4847.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4847 DESCRIPTION Low Collector Saturation Voltage Collector-Emitter Breakdown Voltage- V = 120V (Min) (BR)CEO Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in humidifier , DC/DC converter and general purpose applications A

 0.10. Size:185K  inchange semiconductor
 2sc4849.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4849 DESCRIPTION Low Collector Saturation Voltage V = 0.6V(Max)@ I = 5A CE(sat) C Collector-Emitter Breakdown Voltage- V = 120V (Min) (BR)CEO High Switching Speed Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

 0.11. Size:185K  inchange semiconductor
 2sc4848.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4848 DESCRIPTION Low Collector Saturation Voltage V = 0.6V(Max)@ I = 5A CE(sat) C Collector-Emitter Breakdown Voltage- V = 120V (Min) (BR)CEO High Switching Speed Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS