2SC496 Todos los transistores

 ..1. Size:743K  1
 2sc490 2sc491 2sc492 2sc493 2sc494 2sc495 2sc496 2sc497 2sc498 2sc499.pdf

 0.1. Size:37K  panasonic
 2sc4968.pdf

Transistor 2SC4968 Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit mm 5.0 0.2 4.0 0.2 Features Low noise figure NF. High gain. High transition frequency fT. Absolute Maximum Ratings (Ta=25 C) +0.2 +0.2 Parameter Symbol Ratings Unit 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 15 V 1.27 1.27 Collector to emitter voltage VCEO 10 V Emitte

 0.2. Size:41K  panasonic
 2sc4968 e.pdf

Transistor 2SC4968 Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit mm 5.0 0.2 4.0 0.2 Features Low noise figure NF. High gain. High transition frequency fT. Absolute Maximum Ratings (Ta=25 C) +0.2 +0.2 Parameter Symbol Ratings Unit 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 15 V 1.27 1.27 Collector to emitter voltage VCEO 10 V Emitte

 0.3. Size:58K  panasonic
 2sc4960.pdf

Power Transistors 2SC4960, 2SC4960A Silicon NPN triple diffusion planar type For power switching Unit mm Features 15.0 0.3 5.0 0.2 High-speed switching 11.0 0.2 3.2 High collector to base voltage VCBO Satisfactory linearity of foward current transfer ratio hFE 3.2 0.1 Full-pack package with outstanding insulation, which can be in- stalled to the heat sink with one screw

 0.4. Size:35K  hitachi
 2sc4964.pdf

2SC4964 Silicon NPN Epitaxial ADE-208-005 1st. Edition Application VHF / UHF RF switch Features Low Ron and high performance for RF switch. Capable of high density mounting. Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC4964 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 12 V Collector to emitter voltage VCEO 8

 0.5. Size:14K  hitachi
 2sc4965.pdf

2SC4965 Silicon NPN Epitaxial ADE-208-006 1st. Edition Application VHF / UHF RF switch Features Low Ron and high performance for RF switch. Capable of high density mounting. Outline 2SC4965 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 12 V Collector to emitter voltage VCEO 8 V Emitter to base voltage VEBO 3 V Collector cu

 0.6. Size:153K  jmnic
 2sc4963.pdf

JMnic Product Specification Silicon NPN Power Transistors 2SC4963 DESCRIPTION With TO-3PFM package High breakdown voltage High speed switching Built-in damper diode APPLICATIONS Color TV horizontal deflection output Color display horizontal deflection output PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PFM) and symbol 3 Emitter

 0.7. Size:892K  kexin
 2sc4964.pdf

SMD Type Transistors NPN Transistors 2SC4964 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=100mA 1 2 Collector Emitter Voltage VCEO=8V +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 12 Collect

 0.8. Size:189K  inchange semiconductor
 2sc4963.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4963 DESCRIPTION High Breakdown Voltage High Switching Speed Built in damper diode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Very high-definition CRT display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a

 0.9. Size:185K  inchange semiconductor
 2sc4960.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4960 DESCRIPTION High Collector-Base Breakdown Voltage- V = 900V(Min) (BR)CBO High Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE