2SC50 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC50
Material: Ge
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.1 W
Tensión colector-base (Vcb): 20 V
Tensión emisor-base (Veb): 20 V
Corriente del colector DC máxima (Ic): 0.2 A
Temperatura operativa máxima (Tj): 75 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 5 MHz
Ganancia de corriente contínua (hFE): 30
Encapsulados: R27
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2SC50 datasheet
2sc509.pdf
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2sc500 2sc501 2sc502 2sc503 2sc504 2sc505 2sc506 2sc507 2sc508 2sc509 2sc510 2sc511.pdf
2sc5097.pdf
2SC5097 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5097 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.8dB, S 2 = 10dB (f = 2 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V
2sc5091.pdf
2SC5091 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5091 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S 2 = 13dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V
2sc5066.pdf
2SC5066 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5066 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S 2 = 12dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V B
2sc5096ft.pdf
2SC5096FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5096FT VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.8dB, S 2 = 7.5dB (f = 2 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 8 V Emitter-base voltage VEBO 1.
2sc5094.pdf
2SC5094 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5094 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.8dB, S 2 = 7.5dB (f = 2 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V
2sc5090.pdf
2SC5090 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5090 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S 2 = 13dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V
2sc5096.pdf
2SC5096 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5096 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.8dB, S 2 = 7.5dB (f = 2 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V
2sc5088.pdf
2SC5088 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5088 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S 2 = 13dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V B
2sc5064.pdf
2SC5064 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5064 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S 2 = 12dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V B
2sc5065.pdf
2SC5065 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5065 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S 2 = 12dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V B
2sc5084.pdf
2SC5084 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5084 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S 2 = 11dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V B
2sc5089.pdf
2SC5089 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5089 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S 2 = 13dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V
2sc5085.pdf
2SC5085 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5085 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S 2 = 11dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V B
2sc5093.pdf
2SC5093 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5093 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.8dB, S 2 = 9.5dB (f = 2 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V
2sc5098.pdf
2SC5098 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5098 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.8dB, S 2 = 10dB (f = 2 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V
2sc5087r.pdf
2SC5087R TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5087R VHF to UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S21e 2 = 13.5dB (f = 1 GHz) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V
2sc5066ft.pdf
2SC5066FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5066FT VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S 2 = 12dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3
2sc5084o 2sc5084y.pdf
2SC5084 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5084 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S21e 2 = 11dB (f = 1 GHz) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V Base
2sc5091ft.pdf
2SC5091FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5091FT VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S 2 = 13dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 8 V Emitter-base voltage VEBO 1.5
2sc5092.pdf
2SC5092 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5092 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.8dB, S 2 = 9.5dB (f = 2 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V
2sc5086.pdf
2SC5086 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5086 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S 2 = 11dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V B
2sc5086ft.pdf
2SC5086FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5086FT VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S 2 = 11dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3
2sc5087.pdf
2SC5087 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5087 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S 2 = 13dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V B
2sc5095.pdf
2SC5095 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5095 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.8dB, S 2 = 7.5dB (f = 2 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V
2sc5046.pdf
Ordering number EN4784 NPN Triple Diffused Planar Silicon Transistor 2SC5046 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High reliability (Adoption of HVP process). 2048B High breakdown voltage (VCBO=1600V). [2SC5046] Adoption of MBIT process. 20.0 3.3 5.0 2.0 3.4 0.6
2sc5045.pdf
Ordering number EN4783 NPN Triple Diffused Planar Silicon Transistor 2SC5045 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High reliability (Adoption of HVP process). 2039D High breakdown voltage (VCBO=1600V). [2SC5045] Adoption of MBIT process. 16.0 5.6 3.4 3.1 2.8 2.0
2sc5042.pdf
Ordering number EN4780 NPN Triple Diffused Planar Silicon Transistor 2SC5042 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High reliability (HVP process). 2039D High breakdown voltage (VCBO=1600V). [2SC5042] Adoption of MBIT process. 16.0 5.6 3.4 3.1 2.8 2.0 2.0 1.0 0.
2sc5041.pdf
Ordering number EN4779 NPN Triple Diffused Planar Silicon Transistor 2SC5041 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High reliability (HVP process). 2039D High breakdown voltage (VCBO=1600V). [2SC5041] Adoption of MBIT process. 16.0 5.6 3.4 On-chip damper diode.
2sc5070.pdf
Ordering number EN4473 NPN Epitaxial Planar Silicon Transistor 2SC5070 Low-Frequency General-Purpose Amplifier, Driver Applications Features Package Dimensions High current capacity. unit mm Adoption of MBIT process. 2084A High DC current gain. [2SC5070] Low collector-to-emitter saturation voltage. 4.5 1.9 2.6 10.5 High VEBO. 1.2 1.4 1.2 0.5 1.6 0.5 1 2
2sc5044.pdf
Ordering number EN4782A NPN Triple Diffused Planar Silicon Transistor 2SC5044 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High reliability (HVP process). 2039D High breakdown voltage (VCBO=1600V). [2SC5044] Adoption of MBIT process. 16.0 5.6 3.4 3.1 2.8 2.0 2.0 1.0 0
2sc5043.pdf
Ordering number EN4781 NPN Triple Diffused Planar Silicon Transistor 2SC5043 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High reliability (HVP process). 2039D High breakdown voltage (VCBO=1600V). [2SC5043] Adoption of MBIT process. 16.0 5.6 3.4 On-chip damper diode.
2sc5069.pdf
Ordering number EN4509 NPN Epitaxial Planar Silicon Transistor 2SC5069 Low-Frequency General-Purpose Amplifier, Driver Applications Features Package Dimensions High current capacity. unit mm Adoption of MBIT process. 2038A High DC current gain. [2SC5069] Low collector-to-emitter saturation voltage. 4.5 High VEBO. 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 Ba
2sc5047.pdf
Ordering number EN4785A NPN Triple Diffused Planar Silicon Transistor 2SC5047 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High reliability (Adoption of HVP process). 2048B High breakdown voltage (VCBO=1600V). [2SC5047] Adoption of MBIT process. 20.0 3.3 5.0 2.0 3.4 0.6
2sc5022.pdf
To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM
ne856 2sc5011 2sc5006 2sc4226 2sc3355 2sc3603 2sc3356 2sc3357 2sc3603 2sc4093.pdf
NEC's NPN SILICON HIGH NE856 FREQUENCY TRANSISTOR SERIES FEATURES HIGH GAIN BANDWIDTH PRODUCT fT = 7 GHz LOW NOISE FIGURE 1.1 dB at 1 GHz HIGH COLLECTOR CURRENT 100 mA HIGH RELIABILITY METALLIZATION 35 (MICRO-X) 00 (CHIP) LOW COST DESCRIPTION NEC's NE856 series of NPN epitaxial silicon transistors is designed for low cost amplifier and oscillator application
2sc5008.pdf
DATA SHEET SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal amplifiers from VHF band to L band. Low 1.6 0.1 noise figure, high gain, and high current capability achieve a very wide 0.8 0.1 dyna
2sc5004.pdf
DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5004 is a low supply voltage transistor designed for UHF in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the 1.6 0.1 0.8 0.1 transistor has been applied ultra super mini mold package. 2 FEATURES
2sc5013.pdf
DATA SHEET SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES Small Package PACKAGE DIMENSIONS High Gain Bandwidth Product (fT = 10 GHz TYP.) in millimeters Low Noise, High Gain 2.1 0.2 Low Voltage Operation 1.25 0.1 0.3 +0.1 0.05 (LEADS 2, 3, 4) ORDERING INFORMATION 2 3 P
ne680xx 2sc5013 2sc5008 2sc4228 2sc3585 2sc3587 2sc4095.pdf
NEC's NPN SILICON HIGH NE680 FREQUENCY TRANSISTOR SERIES FEATURES HIGH GAIN BANDWIDTH PRODUCT fT = 10 GHz LOW NOISE FIGURE 1.7 dB at 2 GHz 2.6 dB at 4 GHz HIGH ASSOCIATED GAIN 12.5 dB at 2 GHz 8.0 dB at 4 GHz EXCELLENT LOW VOLTAGE 00 (CHIP) 35 (MICRO-X) LOW CURRENT PERFORMANCE DESCRIPTION NEC's NE680 series of NPN epitaxial silicon transistors is designed for l
ne58219 2sc5004.pdf
DATA SHEET SILICON TRANSISTOR NE58219 / 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The NE58219 / 2SC5004 is a low supply voltage transistor in millimeters designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the 1.6 0.1 0.8 0.1 transistor has been applied ultra super mini mold packa
2sc5005.pdf
DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5005 is a low supply voltage transistor designed for UHF in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the transistor has been applied ultra super mini mold package. 1.6 0.1 0.8 0.1 2 FEATURES
2sc5006.pdf
DATA SHEET SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direc
2sc5014.pdf
DATA SHEET SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES Small Package PACKAGE DIMENSIONS High Gain Bandwidth Product (fT = 12 GHz TYP.) in millimeters Low Noise, High Gain 2.1 0.2 Low Voltage Operation 1.25 0.1 ORDERING INFORMATION PART QUANTITY PACKING STYLE NUMBER 2SC5014
2sc5010.pdf
DATA SHEET SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct
2sc5012.pdf
DATA SHEET SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES Small Package PACKAGE DIMENSIONS High Gain Bandwidth Product (fT = 9 GHz TYP.) in millimeters Low Noise, High Gain 2.1 0.2 Low Voltage Operation 1.25 0.1 0.3 +0.1 0.05 (LEADS 2, 3, 4) ORDERING INFORMATION 2 3 P
2sc5011.pdf
DATA SHEET SILICON TRANSISTOR 2SC5011 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES Small Package PACKAGE DIMENSIONS High Gain Bandwidth Product in millimeters (fT = 6.5 GHz TYP.) 2.1 0.2 Low Noise, High Gain 1.25 0.1 0.3 +0.1 0.05 Low Voltage Operation (LEADS 2, 3, 4) 2 3 ORDERING INFORMATION
2sc5009.pdf
DATA SHEET SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in low noise and small signal amplifiers from VHF band to L band. Low in milimeters noise figure, high gain, and high current capability achieve a very wide 1.6 0.1 dynamic range and e
2sc5012 2sc5007 2sc4227 2sc3583 2sc3604 2sc4094 ne681.pdf
NEC's NPN SILICON HIGH NE681 FREQUENCY TRANSISTOR SERIES FEATURES HIGH GAIN BANDWIDTH PRODUCT fT = 8 GHz LOW NOISE FIGURE 1.2 dB at 1 GHz 1.6 dB at 2 GHz HIGH ASSOCIATED GAIN 15 dB at 1 GHz 12 dB at 2 GHz LOW COST 00 (CHIP) 35 (MICRO-X) DESCRIPTION NEC's NE681 series of NPN epitaxial silicon transistors are designed for low noise, high gain, low cost amplifier a
2sc5007.pdf
DATA SHEET SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direc
2sc5015.pdf
DATA SHEET NPN SILICON RF TRANSISTOR 2SC5015 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD (18) FEATURES High fT fT = 12 GHz TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz Low noise and high gain Low voltage operation 4-pin super minimold (18) package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5015 50
2sc5001.pdf
2SC5001 Transistors Low VCE(sat) Transistor (Strobe flash) (20V, 10A) 2SC5001 External dimentions (Unit mm) Features 1) Low saturation voltage, typically VCE(sat) = 0.13V at IC / CPT3 6.5 5.1 IB= 4A / 50mA. 2.3 0.5 2) High current capacity, typically IC = 10A for DC operation and 15A for 10ms pulse. 3) Complements the 2SA1834. 0.75 Packaging specifications
2sc5053.pdf
2SC5053 Transistors Medium power transistor (50V, 1A) 2SC5053 Features Dimensions (Unit mm) 1) Low saturation voltage, typically VCE(sat) = 0.12V at IC / MPT3 IB = 500mA / 50mA 2) PC=2W (on 40 40 0.7mm ceramic board) 3) Complements the 2SA1900 (1)Base (2)Collector (3)Emitter Absolute maximum ratings (Ta=25 C) Parameter Symbol Limits Unit VCBO 60 V Collector-b
2sa1834 2sc5001.pdf
2SA1834 Transistors Transistors 2SC5001 (96-106-B217) (96-193-D217) 292 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference onl
2sc5060.pdf
2SC5060 Transistors Power transistor (90 10V, 3A) 2SC5060 External dimensions (Units mm) Features 1) Built-in zener diode between collector and base. 2) Zener diode has low voltage dispersion. 2.5 6.8 3) Strong protection against reverse power surges due to L loads. 4) Darlington connection for high DC current gain. 0.65Max. 5) Built-in resistor between base and emitter
2sa1900 2sc5053.pdf
2SA1900 Transistors Transistors 2SC5053 (96-115-B352) (96-196-D352) 297 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference onl
2sc5026 e.pdf
Transistor 2SC5026 Silicon NPN epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SA1890 1.5 0.1 4.5 0.1 1.6 0.2 Features Low collector to emitter saturation voltage VCE(sat). High collector to emitter voltage VCEO. 45 Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the
2sc5063.pdf
Power Transistors 2SC5063 Silicon NPN triple diffusion planar type Unit mm 8.5 0.2 3.4 0.3 For high breakdown voltage high-speed switching 6.0 0.5 1.0 0.1 Features 1.5max. 1.1max. High-speed switching High collector to base voltage VCBO 0.8 0.1 0.5max. Wide area of safe operation (ASO) 2.54 0.3 N type package enabling direct soldering of the radiating fin to 5.08 0
2sc5019 e.pdf
Transistor 2SC5019 Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit mm 1.5 0.1 4.5 0.1 1.6 0.2 Features Low noise figure NF. High gain. 45 High transition frequency fT. Mini Power type package, allowing downsizing of the equipment 0.4 0.08 and automatic insertion through the tape packing and the maga- 0.4 0.04 0.5 0.08 zine packing. 1.5
2sc5036.pdf
Power Transistors 2SC5036, 2SC5036A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 4.6 0.2 Features 9.9 0.3 2.9 0.2 High-speed switching 3.2 0.1 High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package with outstanding insulation,
2sc5034.pdf
Power Transistors 2SC5034 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 4.6 0.2 9.9 0.3 2.9 0.2 Features 3.2 0.1 High collector to emitter VCEO High-speed switching Full-pack package with outstanding insulation, which can be in- stalled to the heat sink with one screw 2.6 0.1 1.2 0.15 1.45 0.15 0.7 0.1 Absol
2sc5077.pdf
Power Transistors 2SC5077, 2SC5077A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 4.6 0.2 Features 9.9 0.3 2.9 0.2 High-speed switching 3.2 0.1 High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package with outstanding insulation,
2sc5032.pdf
Power Transistors 2SC5032 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 4.6 0.2 9.9 0.3 2.9 0.2 Features 3.2 0.1 High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE 2.6 0.1 Full-pack package with outstanding insulatio
2sc5019.pdf
Transistor 2SC5019 Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit mm 1.5 0.1 4.5 0.1 1.6 0.2 Features Low noise figure NF. High gain. 45 High transition frequency fT. Mini Power type package, allowing downsizing of the equipment 0.4 0.08 and automatic insertion through the tape packing and the maga- 0.4 0.04 0.5 0.08 zine packing. 1.5
2sc5026.pdf
Transistor 2SC5026 Silicon NPN epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SA1890 1.5 0.1 4.5 0.1 1.6 0.2 Features Low collector to emitter saturation voltage VCE(sat). High collector to emitter voltage VCEO. 45 Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the
2sc5018 e.pdf
Transistor 2SC5018 Silicon NPN triple diffusion planer type For high breakdown voltage high-speed switching Unit mm 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High collector to base voltage VCBO. High emitter to base voltage VEBO. 0.65 max. +0.1 Absolute Maximum Ratings (Ta=25 C) 0.45 0.05 2.5 0.5 2.5 0.5 Parameter Symbol Ratings Unit 1 2 3 Collect
2sc5037.pdf
Power Transistors 2SC5037, 2SC5037A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 4.6 0.2 Features 9.9 0.3 2.9 0.2 High-speed switching 3.2 0.1 High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package with outstanding insulation,
2sc5035.pdf
Power Transistors 2SC5035 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm Features 4.6 0.2 High-speed switching 9.9 0.3 2.9 0.2 3.2 0.1 High collector to base voltage VCBO Low collector to emitter saturation voltage VCE(sat) Full-pack package with outstanding insulation, which can be in- stalled to the heat sink with one
2sc5018.pdf
Transistor 2SC5018 Silicon NPN triple diffusion planer type For high breakdown voltage high-speed switching Unit mm 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High collector to base voltage VCBO. High emitter to base voltage VEBO. 0.65 max. +0.1 Absolute Maximum Ratings (Ta=25 C) 0.45 0.05 2.5 0.5 2.5 0.5 Parameter Symbol Ratings Unit 1 2 3 Collect
2sc5027e.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SC5027E NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY TRANSISTOR . FEATURES * High Speed Switching * Wide SOA ORDERING INFORMATION Order Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC5027EL-x-TA3-T 2SC5027EL-x-TA3-T TO-220 B C E Tube 2SC5027EL-x-TF2-T 2SC5027EL-x-TF2-T TO-220F2 B C E Tube 2SC5027EL-
2sc5006.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SC5006 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SC5006 is an NPN epitaxial transistor; it uses UTC s advanced technology to provide the customers with low noise figure, high DC current gain and high current capability achieve a very wide dynamic range and excellent linearity. The UTC 2SC5006 is
2sc5027.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SC5027 NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY . 1 FEATURES TO-220 * High Voltage (VCEO = 800V) * High Speed Switching * Wide SOA 1 TO-220F *Pb-free plating product number 2SC5027L ORDERING INFORMATION Order Number Pin Assignment Package Packing Normal Lead Free Plating 1 2 3 2SC5027-x-TA3-T 2SC5027L-x-TA3-T TO-
2sc5081.pdf
2SC5081 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 13.5 GHz Typ High gain, low noise figure PG = 18 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline CMPAK 4 2 3 1 1. Collector 4 2. Emitter 3. Base 4. Emitter 2SC5081 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltag
2sc5080.pdf
2SC5080 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 13.5 GHz Typ High gain, low noise figure PG = 18 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline MPAK-4 2 3 1 1. Collector 2. Emitter 4 3. Base 4. Emitter 2SC5080 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage V
2sc5050.pdf
2SC5050 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 11 GHz Typ High gain, low noise figure PG = 14.0 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC5050 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collect
2sc5051.pdf
2SC5051 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 11 GHz Typ High gain, low noise figure PG = 14.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline CMPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC5051 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collec
2sc5023.pdf
2SC5023 Silicon NPN Epitaxial Application TO 126FM High frequency amplifier Features Excellent high frequency characteristics fT = 1000 MHz typ High breakdown voltage and low output capacitance 1 2 VCEO = 100 V, Cob = 4.5 pF typ 3 1. Emitter Suitable for wide band video amplifier 2. Collector 3. Base Absolute Maximum Ratings (Ta = 25 C) Item Symbol Rating Unit
2sc5078.pdf
2SC5078 Silicon NPN Epitaxial ADE-208-221 1st. Edition Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 12 GHz Typ High gain, low noise figure PG = 17 dB Typ, NF = 1.6 dB Typ at f = 900 MHz Outline MPAK-4 2 3 1 1. Collector 4 2. Emitter 3. Base 4. Emitter 2SC5078 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Co
2sc5049.pdf
2SC5049 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 10 GHz Typ High gain, low noise figure PG = 15.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC5049 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collect
2sc5079.pdf
2SC5079 Silicon NPN Epitaxial ADE-208-222 1st. Edition Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 12 GHz Typ High gain, low noise figure PG = 17 dB Typ, NF = 1.6 dB Typ at f = 900 MHz Outline CMPAK 4 2 3 1 1. Collector 4 2. Emitter 3. Base 4. Emitter 2SC5079 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit
2sc5022.pdf
To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM
2sc5003.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC5003 DESCRIPTION With TO-3PML package High voltage switching transistor Built-in damper diode APPLICATIONS Display horizontal deflection output; switching regulator and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum
2sc5042.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC5042 DESCRIPTION With TO-3PML package High breakdown voltage, high reliability. High speed APPLICATIONS Ultrahigh-definition CRT display Horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Maximum absol
2sc5002.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC5002 DESCRIPTION With TO-3PML package High voltage switching APPLICATIONS Display horizontal deflection output; switching regulator general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER COND
2sc5099.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC5099 DESCRIPTION With TO-3PML package Complement to type 2SA1907 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltag
2sc5048.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC5048 DESCRIPTION With TO-3P(H)IS package High speed High voltage Low saturation voltage Collector metal (fin) is fully covered with mold resin APPLICATIONS Horizontal deflection output for high resolution display,colorTV High speed switching applications PINNING PIN DESCRIPTION 1 Base
2sc5003.pdf
Equivalent C circuit B Built-in Damper Diode 2SC5003 (50 ) E Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application Display Horizontal Deflection Output, Switching Regulator and General Purpose External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SC5003 Symbol Conditions 2SC5003
2sc5071.pdf
2SC5071 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application Switching Regulator and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions MT-100(TO3P) Symbol Conditions Symbol 2SC5071 Unit 2SC5071 Unit 0.2 4.8 0.4 15.6 ICBO VCB=500V VCBO 500 V 100max A 0.1 9.
2sc5002.pdf
2SC5002 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application Display Horizontal Deflection Output, Switching Regulator and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM100(TO3PF) Symbol 2SC5002 Symbol Conditions 2SC5002 Unit Unit 0.2 0.2 5.5 15.6 ICBO1 VCB=1200V A VCBO
2sc5099.pdf
2SC5099 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1907) Application Audio and General Purpose External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SC5099 Unit Symbol Conditions 2SC5099 Unit 0.2 0.2 5.5 15.6 0.2 VCBO 120 V ICBO VCB=120V 10max A 3.45 VCEO 80 V IEBO VEB=6V 10max A VE
2sc5027af.pdf
RoHS 2SC5027 Series RoHS SEMICONDUCTOR Nell High Power Products Silicon NPN triple diffusion planar transistor 3A/ 800V / 50W FEATURES High-speed switching High breakdown voltage and high reliability C Wide SOA (Safe Operation Area) TO-220 package which can be installed to the heat sink with one screw B B C APPLICATIONS C E E Switching regulator and general purpose TO-2
2sc5027a.pdf
RoHS 2SC5027 Series RoHS SEMICONDUCTOR Nell High Power Products Silicon NPN triple diffusion planar transistor 3A/ 800V / 50W FEATURES High-speed switching High breakdown voltage and high reliability C Wide SOA (Safe Operation Area) TO-220 package which can be installed to the heat sink with one screw B B C APPLICATIONS C E E Switching regulator and general purpose TO-2
2sc5053.pdf
SMD Type Transistors NPN Transistors 2SC5053 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=2A Collector Emitter Voltage VCEO=50V Complementary to 2SA1900 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50
2sc5050.pdf
SMD Type Transistors NPN Transistors 2SC5050 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=50mA 1 2 Collector Emitter Voltage VCEO=8V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collect
2sc5051.pdf
SMD Type Transistors NPN Transistors 2SC5051 Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=8V 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collector - Emitter Voltage VCEO 8 V Emitter - Base Voltage VEBO 1.5 Collector Current - Continuous IC 50 mA
2sc5094.pdf
SMD Type Transistors NPN Transistors 2SC5094 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=15mA 1 2 Collector Emitter Voltage VCEO=10V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collec
2sc5064.pdf
SMD Type Transistors NPN Transistors 2SC5064 SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features Collector Current Capability IC=30mA Collector Emitter Voltage VCEO=12V 1 2 +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collec
2sc5084.pdf
SMD Type Transistors NPN Transistors 2SC5084 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=80mA 1 2 Collector Emitter Voltage VCEO=12V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Colle
2sc5089.pdf
SMD Type Transistors NPN Transistors 2SC5089 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=40mA 1 2 Collector Emitter Voltage VCEO=10V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collec
2sc5019.pdf
SMD Type Transistors NPN Transistors 2SC5019 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=80mA Collector Emitter Voltage VCEO=10V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collector - Emitter Voltage VCEO 10 V Emitter - Base Voltage VE
2sc5026.pdf
SMD Type Transistors NPN Transistors 2SC5026 1.70 0.1 Features Low collector to emitter saturation voltage VCE(sat). High collector to emitter voltage VCEO. Complementary to 2SA1890 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Collector - Emitter Voltage V
2sc5049.pdf
SMD Type Transistors NPN Transistors 2SC5049 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=20mA 1 2 Collector Emitter Voltage VCEO=8V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collect
2sc5086.pdf
SMD Type Transistors NPN Transistors 2SC5086 SOT-523 U nit m m +0. 1 1.6 -0. 1 +0.1 1.0 -0.1 +0.05 0.2 -0.05 0.15 0.05 2 1 Features Collector Current Capability IC=80mA 3 Collector Emitter Voltage VCEO=12V 0.3 0.05 +0.1 0.5 -0.1 1. Base 2. Emitter 3. Collecter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage
2sc5069.pdf
SMD Type Transistors NPN Transistors 2SC5069 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=2A Collector Emitter Voltage VCEO=25V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VEBO
2sc5053r.pdf
2SC5053R NPN-Silicon General use Transistors 1W 1.5A 25V 4 Applications Can be used for switching and amplifying in various electrical and electronic circuit. 1 2 3 SOT-89 Maximum ratings Parameters Symbol Rating Unit Marking V VCEO 25 Collector-emitter voltage (IB=0) 2SC5053R=GD VCBO 40 V Collector-base voltage IE=0 VEBO 6 V Emitter-base voltage IC=0
2sc5027t1tl.pdf
2SC5027T1TL ELECTRICAL CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BV Emitter -Base Breakdown Voltage I = 1mA; I = 0 7 V EBO E C BV Collector- Emitter Breakdown Voltage I = 5mA; I = 0 800 V CEO C B BV Collector- Base Breakdown Voltage I = 1mA; I = 0 850 V CBO C E Collector-Emitter Saturation Voltage I = 1.5A; I = 0.3A 2.0 V
2sc5003.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5003 DESCRIPTION With TO-3PML package High voltage switching transistor Built-in damper diode APPLICATIONS Display horizontal deflection output; switching regulator and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter
2sc5042.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5042 DESCRIPTION NPN triple diffused planar silicon transistor High Breakdown Voltage High Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Very high-definition CRT display horizontal deflection output applications ABSOLUTE MAXIM
2sc5090.pdf
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC5090 DESCRIPTION High Gain Bandwidth Product f = 10 GHz TYP. T High Gain, Low Noise Figure S 2 = 13 dB TYP., NF = 1.1 dB TYP @ f = 1 GHz 21e 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for VHF UHF band low noise amplifier applica
2sc5006.pdf
isc Silicon NPN RF Transistor 2SC5006 DESCRIPTION Low Voltage Use Ultra Super Mini Mold Package Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in low noise and small signal amplifiers from VHF band to UHF band ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 20 V CBO
2sc5002.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5002 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO High Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for display horizontal deflection output,switching regulator and general purpose applicati
2sc5027.pdf
isc Silicon NPN Power Transistor 2SC5027 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1100 V CBO V Collector-Emitter Voltage 800 V CEO V Emitter-Base Volt
2sc5084.pdf
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC5084 DESCRIPTION High Gain Bandwidth Product f = 7 GHz TYP. T High Gain, Low Noise Figure S 2 = 11 dB TYP., NF = 1.1 dB TYP @ f = 1 GHz 21e 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for VHF UHF band low noise amplifier applicat
2sc5089.pdf
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC5089 DESCRIPTION High Gain Bandwidth Product f = 10 GHz TYP. T High Gain, Low Noise Figure S 2 = 13 dB TYP., NF = 1.1 dB TYP @ f = 1 GHz 21e 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for VHF UHF band low noise amplifier applica
2sc5043.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5043 DESCRIPTION NPN triple diffused planar silicon transistor High Breakdown Voltage High Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Very high-definition CRT display horizontal deflection output applications ABSOLUTE MAXIM
2sc5099.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5099 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1907 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM
2sc5048.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5048 DESCRIPTION With TO-3P(H)IS package High speed High voltage Low saturation voltage APPLICATIONS Horizontal deflection output for high resolution display,colorTV High speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3P(H)IS
2sc508.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC508 DESCRIPTION With TO-66 Package Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for switching and wide-band amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 18
2sc5047.pdf
isc Silicon NPN Power Transistor 2SC5047 DESCRIPTION High Switching Speed High Breakdown Voltage- V = 1600V(Min) (BR)CBO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1600 V CBO
Otros transistores... 2SC497Y , 2SC498 , 2SC498O , 2SC498R , 2SC498Y , 2SC499 , 2SC49M , 2SC49N , 2SC4793 , 2SC500 , 2SC501 , 2SC502 , 2SC5020 , 2SC5020O , 2SC5020R , 2SC5020Y , 2SC5021 .
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