2SC50 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

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2SC5097 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5097 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.8dB, |S |2 = 10dB (f = 2 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 1.5 V

2SC5091 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5091 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 13dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 1.5 V

2SC5066 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5066 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 12dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3 VB

2SC5096FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5096FT VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.8dB, |S |2 = 7.5dB (f = 2 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 8 VEmitter-base voltage VEBO 1.

2SC5094 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5094 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.8dB, |S |2 = 7.5dB (f = 2 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 1.5 V

2SC5090 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5090 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 13dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 1.5 V

2SC5096 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5096 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.8dB, |S |2 = 7.5dB (f = 2 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 1.5 V

2SC5088 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5088 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 13dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3 VB

2SC5064 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5064 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 12dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3 VB

2SC5065 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5065 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 12dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3 VB

2SC5084 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5084 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 11dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3 VB

2SC5089 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5089 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 13dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 1.5 V

2SC5085 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5085 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 11dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3 VB

2SC5093 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5093 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.8dB, |S |2 = 9.5dB (f = 2 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 1.5 V

2SC5098 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5098 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.8dB, |S |2 = 10dB (f = 2 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 1.5 V

2SC5087R TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5087R VHF to UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S21e|2 = 13.5dB (f = 1 GHz) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3 V

2SC5066FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5066FT VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 12dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3

2SC5084 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5084 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S21e|2 = 11dB (f = 1 GHz) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3 VBase

2SC5091FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5091FT VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 13dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 8 VEmitter-base voltage VEBO 1.5

2SC5092 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5092 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.8dB, |S |2 = 9.5dB (f = 2 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 1.5 V

2SC5086 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5086 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 11dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3 VB

2SC5086FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5086FT VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 11dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3

2SC5087 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5087 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 13dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3 VB

2SC5095 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5095 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.8dB, |S |2 = 7.5dB (f = 2 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 1.5 V

Ordering number:EN4784NPN Triple Diffused Planar Silicon Transistor2SC5046Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High reliability (Adoption of HVP process).2048B High breakdown voltage (VCBO=1600V).[2SC5046] Adoption of MBIT process.20.03.35.02.03.40.6

Ordering number:EN4783NPN Triple Diffused Planar Silicon Transistor2SC5045Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High reliability (Adoption of HVP process).2039D High breakdown voltage (VCBO=1600V).[2SC5045] Adoption of MBIT process.16.05.63.43.12.82.0

Ordering number:EN4780NPN Triple Diffused Planar Silicon Transistor2SC5042Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High reliability (HVP process).2039D High breakdown voltage (VCBO=1600V).[2SC5042] Adoption of MBIT process.16.05.63.43.12.82.0 2.01.00.

Ordering number:EN4779NPN Triple Diffused Planar Silicon Transistor2SC5041Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High reliability (HVP process).2039D High breakdown voltage (VCBO=1600V).[2SC5041] Adoption of MBIT process.16.05.63.4 On-chip damper diode.

Ordering number:EN4473NPN Epitaxial Planar Silicon Transistor2SC5070Low-Frequency General-Purpose Amplifier,Driver ApplicationsFeatures Package Dimensions High current capacity.unit:mm Adoption of MBIT process.2084A High DC current gain.[2SC5070] Low collector-to-emitter saturation voltage.4.51.9 2.610.5 High VEBO.1.2 1.41.20.51.60.51 2

Ordering number:EN4782ANPN Triple Diffused Planar Silicon Transistor2SC5044Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High reliability (HVP process).2039D High breakdown voltage (VCBO=1600V).[2SC5044] Adoption of MBIT process.16.05.63.43.12.82.0 2.01.00

Ordering number:EN4781NPN Triple Diffused Planar Silicon Transistor2SC5043Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High reliability (HVP process).2039D High breakdown voltage (VCBO=1600V).[2SC5043] Adoption of MBIT process.16.05.63.4 On-chip damper diode.

Ordering number:EN4509NPN Epitaxial Planar Silicon Transistor2SC5069Low-Frequency General-Purpose Amplifier,Driver ApplicationsFeatures Package Dimensions High current capacity.unit:mm Adoption of MBIT process.2038A High DC current gain.[2SC5069] Low collector-to-emitter saturation voltage.4.5 High VEBO.1.51.60.4 0.53 2 10.41.53.01 : Ba

Ordering number:EN4785ANPN Triple Diffused Planar Silicon Transistor2SC5047Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High reliability (Adoption of HVP process).2048B High breakdown voltage (VCBO=1600V).[2SC5047] Adoption of MBIT process.20.03.35.02.03.40.6

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

NEC's NPN SILICON HIGH NE856FREQUENCY TRANSISTOR SERIESFEATURES HIGH GAIN BANDWIDTH PRODUCT:fT = 7 GHz LOW NOISE FIGURE:1.1 dB at 1 GHz HIGH COLLECTOR CURRENT: 100 mA HIGH RELIABILITY METALLIZATION35 (MICRO-X)00 (CHIP) LOW COSTDESCRIPTIONNEC's NE856 series of NPN epitaxial silicon transistors isdesigned for low cost amplifier and oscillator application

DATA SHEETSILICON TRANSISTOR2SC5008NPN SILICON EPITAXIAL TRANSISTOR3 PINS ULTRA SUPER MINI MOLDDESCRIPTIONPACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for usein millimetersin low noise and small signal amplifiers from VHF band to L band. Low1.6 0.1noise figure, high gain, and high current capability achieve a very wide0.8 0.1dyna

DATA SHEETSILICON TRANSISTOR2SC5004NPN SILICON EPITAXIAL TRANSISTOR3 PINS ULTRA SUPER MINI MOLDDESCRIPTIONPACKAGE DIMENSIONSThe 2SC5004 is a low supply voltage transistor designed for UHFin millimetersOSC/MIX.It is suitable for a high density surface mount assembly since the1.6 0.10.8 0.1transistor has been applied ultra super mini mold package.2FEATURES

DATA SHEETSILICON TRANSISTOR2SC5013HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTOR4 PINS SUPER MINI MOLDFEATURES Small Package PACKAGE DIMENSIONS High Gain Bandwidth Product (fT = 10 GHz TYP.) in millimeters Low Noise, High Gain2.1 0.2 Low Voltage Operation 1.25 0.1 0.3 +0.1 0.05 (LEADS 2, 3, 4) ORDERING INFORMATION2 3 P

NEC's NPN SILICON HIGH NE680FREQUENCY TRANSISTOR SERIESFEATURES HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz LOW NOISE FIGURE:1.7 dB at 2 GHz2.6 dB at 4 GHz HIGH ASSOCIATED GAIN:12.5 dB at 2 GHz8.0 dB at 4 GHz EXCELLENT LOW VOLTAGE00 (CHIP) 35 (MICRO-X)LOW CURRENT PERFORMANCEDESCRIPTIONNEC's NE680 series of NPN epitaxial silicon transistors isdesigned for l

DATA SHEETSILICON TRANSISTORNE58219 / 2SC5004NPN SILICON EPITAXIAL TRANSISTOR3 PINS ULTRA SUPER MINI MOLDDESCRIPTIONPACKAGE DIMENSIONSThe NE58219 / 2SC5004 is a low supply voltage transistor in millimetersdesigned for UHF OSC/MIX.It is suitable for a high density surface mount assembly since the1.6 0.10.8 0.1transistor has been applied ultra super mini mold packa

DATA SHEETSILICON TRANSISTOR2SC5005NPN SILICON EPITAXIAL TRANSISTOR3 PINS ULTRA SUPER MINI MOLDDESCRIPTIONPACKAGE DIMENSIONSThe 2SC5005 is a low supply voltage transistor designed for UHFin millimetersOSC/MIX.It is suitable for a high density surface mount assembly since thetransistor has been applied ultra super mini mold package. 1.6 0.10.8 0.12FEATURES

DATA SHEETSILICON TRANSISTOR2SC5006NPN SILICON EPITAXIAL TRANSISTOR3 PINS ULTRA SUPER MINI MOLDDESCRIPTIONThe 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers fromVHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic rangeand excellent linearity. This is achieved by direc

DATA SHEETSILICON TRANSISTOR2SC5014HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTOR4 PINS SUPER MINI MOLDFEATURES Small Package PACKAGE DIMENSIONS High Gain Bandwidth Product (fT = 12 GHz TYP.) in millimeters Low Noise, High Gain2.1 0.2 Low Voltage Operation1.25 0.1 ORDERING INFORMATIONPARTQUANTITY PACKING STYLENUMBER2SC5014

DATA SHEETSILICON TRANSISTOR2SC5010NPN SILICON EPITAXIAL TRANSISTOR3 PINS ULTRA SUPER MINI MOLDDESCRIPTIONThe 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers fromVHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range andexcellent linearity. This is achieved by direct

DATA SHEETSILICON TRANSISTOR2SC5012HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTOR4 PINS SUPER MINI MOLDFEATURES Small Package PACKAGE DIMENSIONS High Gain Bandwidth Product (fT = 9 GHz TYP.) in millimeters Low Noise, High Gain2.1 0.2 Low Voltage Operation1.25 0.1 0.3 +0.1 0.05 (LEADS 2, 3, 4) ORDERING INFORMATION2 3 P

DATA SHEETSILICON TRANSISTOR2SC5011HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTOR4 PINS SUPER MINI MOLDFEATURES Small Package PACKAGE DIMENSIONS High Gain Bandwidth Product in millimeters(fT = 6.5 GHz TYP.)2.1 0.2 Low Noise, High Gain 1.25 0.1 0.3 +0.1 0.05 Low Voltage Operation(LEADS 2, 3, 4) 2 3 ORDERING INFORMATION

DATA SHEETSILICON TRANSISTOR2SC5009NPN SILICON EPITAXIAL TRANSISTOR3 PINS ULTRA SUPER MINI MOLDDESCRIPTIONThe 2SC5009 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONSin low noise and small signal amplifiers from VHF band to L band. Low in milimetersnoise figure, high gain, and high current capability achieve a very wide1.6 0.1 dynamic range and e

NEC's NPN SILICON HIGH NE681FREQUENCY TRANSISTOR SERIESFEATURES HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz LOW NOISE FIGURE:1.2 dB at 1 GHz1.6 dB at 2 GHz HIGH ASSOCIATED GAIN:15 dB at 1 GHz12 dB at 2 GHz LOW COST00 (CHIP) 35 (MICRO-X)DESCRIPTIONNEC's NE681 series of NPN epitaxial silicon transistors aredesigned for low noise, high gain, low cost amplifier a

DATA SHEETSILICON TRANSISTOR2SC5007NPN SILICON EPITAXIAL TRANSISTOR3 PINS ULTRA SUPER MINI MOLDDESCRIPTIONThe 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers fromVHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic rangeand excellent linearity. This is achieved by direc

DATA SHEETNPN SILICON RF TRANSISTOR2SC5015NPN EPITAXIAL SILICON RF TRANSISTORFOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION4-PIN SUPER MINIMOLD (18)FEATURES High fT: fT = 12 GHz TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz Low noise and high gain Low voltage operation 4-pin super minimold (18) packageORDERING INFORMATIONPart Number Quantity Supplying Form2SC5015 50

2SC5001 Transistors Low VCE(sat) Transistor (Strobe flash) (20V, 10A) 2SC5001 External dimentions (Unit : mm) Features 1) Low saturation voltage, typically VCE(sat) = 0.13V at IC / CPT36.55.1IB= 4A / 50mA. 2.30.52) High current capacity, typically IC = 10A for DC operation and 15A for 10ms pulse. 3) Complements the 2SA1834. 0.75 Packaging specifications

2SC5053 Transistors Medium power transistor (50V, 1A) 2SC5053 Features Dimensions (Unit : mm) 1) Low saturation voltage, typically VCE(sat) = 0.12V at IC / MPT3IB = 500mA / 50mA 2) PC=2W (on 40400.7mm ceramic board) 3) Complements the 2SA1900 (1)Base(2)Collector (3)Emitter Absolute maximum ratings (Ta=25C) Parameter Symbol Limits UnitVCBO 60 VCollector-b

2SA1834TransistorsTransistors2SC5001(96-106-B217)(96-193-D217)292Appendix NotesNo technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD.The contents described herein are subject to change without notice. The specifications for theproduct described in this document are for reference onl

2SC5060TransistorsPower transistor (9010V, 3A)2SC5060 External dimensions (Units : mm) Features1) Built-in zener diode between collector and base.2) Zener diode has low voltage dispersion.2.56.83) Strong protection against reverse power surges due to Lloads.4) Darlington connection for high DC current gain.0.65Max.5) Built-in resistor between base and emitter

2SA1900TransistorsTransistors2SC5053(96-115-B352)(96-196-D352)297Appendix NotesNo technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD.The contents described herein are subject to change without notice. The specifications for theproduct described in this document are for reference onl

Transistor2SC5026Silicon NPN epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SA18901.5 0.14.5 0.11.6 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).High collector to emitter voltage VCEO.45Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the

Power Transistors2SC5063Silicon NPN triple diffusion planar typeUnit: mm8.5 0.2 3.4 0.3For high breakdown voltage high-speed switching6.0 0.5 1.0 0.1Features1.5max. 1.1max.High-speed switchingHigh collector to base voltage VCBO0.8 0.1 0.5max.Wide area of safe operation (ASO)2.54 0.3N type package enabling direct soldering of the radiating fin to5.08 0

Transistor2SC5019Silicon NPN epitaxial planer typeFor UHF band low-noise amplificationUnit: mm1.5 0.14.5 0.11.6 0.2FeaturesLow noise figure NF.High gain.45High transition frequency fT.Mini Power type package, allowing downsizing of the equipment0.4 0.08and automatic insertion through the tape packing and the maga- 0.4 0.040.5 0.08zine packing. 1.5

Power Transistors2SC5036, 2SC5036ASilicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm4.6 0.2Features9.9 0.3 2.9 0.2High-speed switching 3.2 0.1High collector to base voltage VCBOWide area of safe operation (ASO)Satisfactory linearity of foward current transfer ratio hFEFull-pack package with outstanding insulation,

Power Transistors2SC5034Silicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm4.6 0.29.9 0.3 2.9 0.2Features 3.2 0.1High collector to emitter VCEOHigh-speed switchingFull-pack package with outstanding insulation, which can be in-stalled to the heat sink with one screw2.6 0.11.2 0.151.45 0.15 0.7 0.1Absol

Power Transistors2SC5077, 2SC5077ASilicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm4.6 0.2Features9.9 0.3 2.9 0.2High-speed switching 3.2 0.1High collector to base voltage VCBOWide area of safe operation (ASO)Satisfactory linearity of foward current transfer ratio hFEFull-pack package with outstanding insulation,

Power Transistors2SC5032Silicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm4.6 0.29.9 0.3 2.9 0.2Features 3.2 0.1High-speed switchingHigh collector to base voltage VCBOWide area of safe operation (ASO)Satisfactory linearity of foward current transfer ratio hFE 2.6 0.1Full-pack package with outstanding insulatio

Transistor2SC5019Silicon NPN epitaxial planer typeFor UHF band low-noise amplificationUnit: mm1.5 0.14.5 0.11.6 0.2FeaturesLow noise figure NF.High gain.45High transition frequency fT.Mini Power type package, allowing downsizing of the equipment0.4 0.08and automatic insertion through the tape packing and the maga- 0.4 0.040.5 0.08zine packing. 1.5

Transistor2SC5026Silicon NPN epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SA18901.5 0.14.5 0.11.6 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).High collector to emitter voltage VCEO.45Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the

Transistor2SC5018Silicon NPN triple diffusion planer typeFor high breakdown voltage high-speed switchingUnit: mm2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesHigh collector to base voltage VCBO.High emitter to base voltage VEBO.0.65 max.+0.1 Absolute Maximum Ratings (Ta=25C) 0.450.052.5 0.5 2.5 0.5Parameter Symbol Ratings Unit1 2 3Collect

Power Transistors2SC5037, 2SC5037ASilicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm4.6 0.2Features9.9 0.3 2.9 0.2High-speed switching 3.2 0.1High collector to base voltage VCBOWide area of safe operation (ASO)Satisfactory linearity of foward current transfer ratio hFEFull-pack package with outstanding insulation,

Power Transistors2SC5035Silicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mmFeatures4.6 0.2High-speed switching9.9 0.3 2.9 0.2 3.2 0.1High collector to base voltage VCBOLow collector to emitter saturation voltage VCE(sat)Full-pack package with outstanding insulation, which can be in-stalled to the heat sink with one

Transistor2SC5018Silicon NPN triple diffusion planer typeFor high breakdown voltage high-speed switchingUnit: mm2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesHigh collector to base voltage VCBO.High emitter to base voltage VEBO.0.65 max.+0.1 Absolute Maximum Ratings (Ta=25C) 0.450.052.5 0.5 2.5 0.5Parameter Symbol Ratings Unit1 2 3Collect

UNISONIC TECHNOLOGIES CO., LTD 2SC5027E NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY TRANSISTOR . FEATURES * High Speed Switching * Wide SOA ORDERING INFORMATION Order Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC5027EL-x-TA3-T 2SC5027EL-x-TA3-T TO-220 B C E Tube2SC5027EL-x-TF2-T 2SC5027EL-x-TF2-T TO-220F2 B C E Tube2SC5027EL-

UNISONIC TECHNOLOGIES CO., LTD 2SC5006 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SC5006 is an NPN epitaxial transistor; it uses UTCs advanced technology to provide the customers with low noise figure, high DC current gain and high current capability achieve a very wide dynamic range and excellent linearity. The UTC 2SC5006 is

UNISONIC TECHNOLOGIES CO., LTD 2SC5027 NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY . 1 FEATURES TO-220* High Voltage (VCEO = 800V) * High Speed Switching * Wide SOA 1TO-220F*Pb-free plating product number: 2SC5027L ORDERING INFORMATION Order Number Pin Assignment Package Packing Normal Lead Free Plating 1 2 32SC5027-x-TA3-T 2SC5027L-x-TA3-T TO-

2SC5081Silicon NPN EpitaxialApplicationVHF / UHF wide band amplifierFeatures High gain bandwidth productfT = 13.5 GHz Typ High gain, low noise figurePG = 18 dB Typ, NF = 1.1 dB Typ at f = 900 MHzOutlineCMPAK42311. Collector42. Emitter3. Base4. Emitter2SC5081Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltag

2SC5080Silicon NPN EpitaxialApplicationVHF / UHF wide band amplifierFeatures High gain bandwidth productfT = 13.5 GHz Typ High gain, low noise figurePG = 18 dB Typ, NF = 1.1 dB Typ at f = 900 MHzOutlineMPAK-42311. Collector2. Emitter43. Base4. Emitter2SC5080Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage V

2SC5050Silicon NPN EpitaxialApplicationVHF / UHF wide band amplifierFeatures High gain bandwidth productfT = 11 GHz Typ High gain, low noise figurePG = 14.0 dB Typ, NF = 1.1 dB Typ at f = 900 MHzOutlineMPAK311. Emitter2. Base23. Collector2SC5050Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 15 VCollect

2SC5051Silicon NPN EpitaxialApplicationVHF / UHF wide band amplifierFeatures High gain bandwidth productfT = 11 GHz Typ High gain, low noise figurePG = 14.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHzOutlineCMPAK311. Emitter2. Base23. Collector2SC5051Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 15 VCollec

2SC5025Silicon NPN EpitaxialApplicationTO126FMHigh frequency amplifierFeatures Excellent high frequency characteristicsfT = 1.2 GHz typ Low output capacitanceCob = 5.0 pF typ1231. Emitter2. Collector3. BaseAbsolute Maximum Ratings (Ta = 25C)Item Symbol Rating Unit

2SC5023Silicon NPN EpitaxialApplicationTO126FMHigh frequency amplifierFeatures Excellent high frequency characteristicsfT = 1000 MHz typ High breakdown voltage and low outputcapacitance12VCEO = 100 V, Cob = 4.5 pF typ31. Emitter Suitable for wide band video amplifier2. Collector3. BaseAbsolute Maximum Ratings (Ta = 25C)Item Symbol Rating Unit

2SC5078Silicon NPN EpitaxialADE-208-2211st. EditionApplicationVHF / UHF wide band amplifierFeatures High gain bandwidth productfT = 12 GHz Typ High gain, low noise figurePG = 17 dB Typ, NF = 1.6 dB Typ at f = 900 MHzOutlineMPAK-42311. Collector42. Emitter3. Base4. Emitter2SC5078Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCo

2SC5049Silicon NPN EpitaxialApplicationVHF / UHF wide band amplifierFeatures High gain bandwidth productfT = 10 GHz Typ High gain, low noise figurePG = 15.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHzOutlineMPAK311. Emitter2. Base23. Collector2SC5049Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 15 VCollect

2SC5079Silicon NPN EpitaxialADE-208-2221st. EditionApplicationVHF / UHF wide band amplifierFeatures High gain bandwidth productfT = 12 GHz Typ High gain, low noise figurePG = 17 dB Typ, NF = 1.6 dB Typ at f = 900 MHzOutlineCMPAK42311. Collector42. Emitter3. Base4. Emitter2SC5079Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings Unit

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

JMnic Product Specification Silicon NPN Power Transistors 2SC5003 DESCRIPTION With TO-3PML package High voltage switching transistor Built-in damper diode APPLICATIONS Display horizontal deflection output; switching regulator and general purpose PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsolute maximum

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC5042 DESCRIPTION With TO-3PML package High breakdown voltage, high reliability. High speed APPLICATIONS Ultrahigh-definition CRT display Horizontal deflection output applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3PML) and symbol Maximum absol

JMnic Product Specification Silicon NPN Power Transistors 2SC5071 DESCRIPTION With TO-3PN package High voltage High speed switching APPLICATIONS For switching regulator and general purpose applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=

JMnic Product Specification Silicon NPN Power Transistors 2SC5002 DESCRIPTION With TO-3PML package High voltage switching APPLICATIONS Display horizontal deflection output; switching regulator general purpose PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER COND

JMnic Product SpecificationSilicon NPN Power Transistors 2SC5099 DESCRIPTION With TO-3PML package Complement to type 2SA1907 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsolute maximum ratings(Tc=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltag

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC5048 DESCRIPTION With TO-3P(H)IS package High speed High voltage Low saturation voltage Collector metal (fin) is fully covered with mold resin APPLICATIONS Horizontal deflection output for high resolution display,colorTV High speed switching applications PINNING PIN DESCRIPTION1 Base

Equivalent CcircuitBBuilt-in Damper Diode2SC5003(50)ESilicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)Application : Display Horizontal Deflection Output, Switching Regulator and General PurposeExternal Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SC5003 Symbol Conditions 2SC5003

2SC5071Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor)Application : Switching Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-100(TO3P)Symbol ConditionsSymbol 2SC5071 Unit 2SC5071 Unit0.24.80.415.6ICBO VCB=500VVCBO 500 V 100max A0.19.

2SC5002Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)Application : Display Horizontal Deflection Output, Switching Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM100(TO3PF)Symbol 2SC5002 Symbol Conditions 2SC5002 UnitUnit0.20.2 5.515.6ICBO1 VCB=1200V AVCBO

2SC5099Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1907)Application : Audio and General PurposeExternal Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SC5099 Unit Symbol Conditions 2SC5099 Unit0.20.2 5.515.60.2VCBO 120 V ICBO VCB=120V 10max A 3.45VCEO 80 V IEBO VEB=6V 10max AVE

RoHS 2SC5027 Series RoHS SEMICONDUCTORNell High Power ProductsSilicon NPN triple diffusion planar transistor3A/ 800V / 50WFEATURESHigh-speed switchingHigh breakdown voltage and high reliabilityCWide SOA (Safe Operation Area)TO-220 package which can be installed to the heat sink with one screwBBC APPLICATIONSCEESwitching regulator and general purposeTO-2

RoHS 2SC5027 Series RoHS SEMICONDUCTORNell High Power ProductsSilicon NPN triple diffusion planar transistor3A/ 800V / 50WFEATURESHigh-speed switchingHigh breakdown voltage and high reliabilityCWide SOA (Safe Operation Area)TO-220 package which can be installed to the heat sink with one screwBBC APPLICATIONSCEESwitching regulator and general purposeTO-2

SMD Type TransistorsNPN Transistors2SC5053SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=2A Collector Emitter Voltage VCEO=50V Complementary to 2SA19000.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50

SMD Type TransistorsNPN Transistors2SC5050SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features Collector Current Capability IC=50mA1 2 Collector Emitter Voltage VCEO=8V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collect

SMD Type TransistorsNPN Transistors2SC5051 Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=8V1.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collector - Emitter Voltage VCEO 8 V Emitter - Base Voltage VEBO 1.5 Collector Current - Continuous IC 50 mA

SMD Type TransistorsNPN Transistors2SC5094SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features Collector Current Capability IC=15mA1 2 Collector Emitter Voltage VCEO=10V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collec

SMD Type TransistorsNPN Transistors2SC5064SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features Collector Current Capability IC=30mA Collector Emitter Voltage VCEO=12V1 2+0.1+0.050.95 -0.1 0.1-0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collec

SMD Type TransistorsNPN Transistors2SC5084SOT-23Unit: mm2.9+0.1-0.1+0.10.4 -0.13 Features Collector Current Capability IC=80mA1 2 Collector Emitter Voltage VCEO=12V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Colle

SMD Type TransistorsNPN Transistors2SC5089SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features Collector Current Capability IC=40mA1 2 Collector Emitter Voltage VCEO=10V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collec

SMD Type TransistorsNPN Transistors2SC5019SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=80mA Collector Emitter Voltage VCEO=10V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collector - Emitter Voltage VCEO 10 V Emitter - Base Voltage VE

SMD Type TransistorsNPN Transistors2SC50261.70 0.1 Features Low collector to emitter saturation voltage VCE(sat). High collector to emitter voltage VCEO. Complementary to 2SA18900.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Collector - Emitter Voltage V

SMD Type TransistorsNPN Transistors2SC5049SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features Collector Current Capability IC=20mA1 2 Collector Emitter Voltage VCEO=8V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collect

SMD Type TransistorsNPN Transistors2SC5086SOT-523 U nit: m m+0.11.6 -0.1+0.11.0 -0.1+0.050.2 -0.05 0.150.052 1 Features Collector Current Capability IC=80mA3 Collector Emitter Voltage VCEO=12V0.30.05+0.10.5 -0.11. Base2. Emitter3. Collecter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage

SMD Type TransistorsNPN Transistors2SC5069SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=2A Collector Emitter Voltage VCEO=25V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VEBO

2SC5053RNPN-Silicon General use Transistors1W 1.5A25V 4ApplicationsCan be used for switching and amplifying in various electrical and electronic circuit. 1 2 3 SOT-89 Maximum ratingsParameters Symbol Rating UnitMarking V VCEO 25Collector-emitter voltage (IB=0) 2SC5053R=GDVCBO 40 VCollector-base voltageIE=0 VEBO 6 VEmitter-base voltageIC=0

2SC5027T1TLELECTRICAL CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BV Emitter -Base Breakdown Voltage I = 1mA; I = 0 7 V EBO E CBV Collector- Emitter Breakdown Voltage I = 5mA; I = 0 800 V CEO C BBV Collector- Base Breakdown Voltage I = 1mA; I = 0 850 V CBO C ECollector-Emitter Saturation Voltage I = 1.5A; I = 0.3A 2.0 V

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5003 DESCRIPTION With TO-3PML package High voltage switching transistor Built-in damper diode APPLICATIONS Display horizontal deflection output; switching regulator and general purpose PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 Emitter

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5042DESCRIPTIONNPN triple diffused planar silicon transistorHigh Breakdown VoltageHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSVery high-definition CRT display horizontal deflectionoutput applicationsABSOLUTE MAXIM

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5071DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC5090DESCRIPTIONHigh Gain Bandwidth Productf = 10 GHz TYP.THigh Gain, Low Noise FigureS 2 = 13 dB TYP., NF = 1.1 dB TYP @ f = 1 GHz21e100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for VHF~UHF band low noise amplifier applica

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC5064DESCRIPTIONLow Noise and High GainNF = 1.1 dB TYP., S 2= 12 dB TYP.21e@V = 5 V, f = 1.0 GHzCE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for VHF~UHF band low noise amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25

isc Silicon NPN RF Transistor 2SC5006DESCRIPTIONLow Voltage UseUltra Super Mini Mold PackageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in low noise and small signal amplifiersfrom VHF band to UHF bandABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 20 VCBO

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC5065DESCRIPTIONLow Noise and High GainNF = 1.1 dB TYP., S 2= 12 dB TYP.21e@V = 5 V, f = 1.0 GHzCE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for VHF~UHF band low noise amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5002DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for display horizontal deflection output,switchingregulator and general purpose applicati

isc Silicon NPN Power Transistor 2SC5027DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1100 VCBOV Collector-Emitter Voltage 800 VCEOV Emitter-Base Volt

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC5084DESCRIPTIONHigh Gain Bandwidth Productf = 7 GHz TYP.THigh Gain, Low Noise FigureS 2 = 11 dB TYP., NF = 1.1 dB TYP @ f = 1 GHz21e100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for VHF~UHF band low noise amplifier applicat

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC5089DESCRIPTIONHigh Gain Bandwidth Productf = 10 GHz TYP.THigh Gain, Low Noise FigureS 2 = 13 dB TYP., NF = 1.1 dB TYP @ f = 1 GHz21e100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for VHF~UHF band low noise amplifier applica

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5043DESCRIPTIONNPN triple diffused planar silicon transistorHigh Breakdown VoltageHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSVery high-definition CRT display horizontal deflectionoutput applicationsABSOLUTE MAXIM

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5099DESCRIPTIONCollector-Emitter Breakdown Voltage-V = 80V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1907100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5048 DESCRIPTION With TO-3P(H)IS package High speed High voltage Low saturation voltage APPLICATIONS Horizontal deflection output for high resolution display,colorTV High speed switching applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3P(H)IS

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC508DESCRIPTIONWith TO-66 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for switching and wide-band amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 18

isc Silicon NPN Power Transistor 2SC5047DESCRIPTIONHigh Switching SpeedHigh Breakdown Voltage-: V = 1600V(Min)(BR)CBOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1600 VCBO