2SC5023B. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

2SC5023B Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC5023B

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 8 W

Tensión colector-base (Vcb): 100 V

Tensión colector-emisor (Vce): 100 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 1100 MHz

Capacitancia de salida (Cc): 6 pF

Ganancia de corriente contínua (hFE): 60

Encapsulados: TO126FM

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2SC5023B datasheet

7.1. Size:11K hitachi
2sc5023.pdf pdf_icon

2SC5023 Silicon NPN Epitaxial Application TO 126FM High frequency amplifier Features Excellent high frequency characteristics fT = 1000 MHz typ High breakdown voltage and low output capacitance 1 2 VCEO = 100 V, Cob = 4.5 pF typ 3 1. Emitter Suitable for wide band video amplifier 2. Collector 3. Base Absolute Maximum Ratings (Ta = 25 C) Item Symbol Rating Unit

8.1. Size:743K 1
2sc500 2sc501 2sc502 2sc503 2sc504 2sc505 2sc506 2sc507 2sc508 2sc509 2sc510 2sc511.pdf pdf_icon

8.2. Size:218K toshiba
2sc5028.pdf pdf_icon

8.3. Size:241K toshiba
2sc5027.pdf pdf_icon

8.4. Size:212K toshiba
2sc5029.pdf pdf_icon

8.5. Size:41K renesas
2sc5022.pdf pdf_icon

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

8.6. Size:41K panasonic
2sc5026 e.pdf pdf_icon

Transistor 2SC5026 Silicon NPN epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SA1890 1.5 0.1 4.5 0.1 1.6 0.2 Features Low collector to emitter saturation voltage VCE(sat). High collector to emitter voltage VCEO. 45 Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the

8.7. Size:37K panasonic
2sc5026.pdf pdf_icon

8.8. Size:198K utc
2sc5027e.pdf pdf_icon

UNISONIC TECHNOLOGIES CO., LTD 2SC5027E NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY TRANSISTOR . FEATURES * High Speed Switching * Wide SOA ORDERING INFORMATION Order Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC5027EL-x-TA3-T 2SC5027EL-x-TA3-T TO-220 B C E Tube 2SC5027EL-x-TF2-T 2SC5027EL-x-TF2-T TO-220F2 B C E Tube 2SC5027EL-

8.9. Size:49K utc
2sc5027.pdf pdf_icon

UNISONIC TECHNOLOGIES CO., LTD 2SC5027 NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY . 1 FEATURES TO-220 * High Voltage (VCEO = 800V) * High Speed Switching * Wide SOA 1 TO-220F *Pb-free plating product number 2SC5027L ORDERING INFORMATION Order Number Pin Assignment Package Packing Normal Lead Free Plating 1 2 3 2SC5027-x-TA3-T 2SC5027L-x-TA3-T TO-

8.10. Size:11K hitachi
2sc5025.pdf pdf_icon

8.11. Size:42K hitachi
2sc5022.pdf pdf_icon

8.12. Size:236K nell
2sc5027af.pdf pdf_icon

RoHS 2SC5027 Series RoHS SEMICONDUCTOR Nell High Power Products Silicon NPN triple diffusion planar transistor 3A/ 800V / 50W FEATURES High-speed switching High breakdown voltage and high reliability C Wide SOA (Safe Operation Area) TO-220 package which can be installed to the heat sink with one screw B B C APPLICATIONS C E E Switching regulator and general purpose TO-2

8.13. Size:236K nell
2sc5027a.pdf pdf_icon

8.14. Size:890K kexin
2sc5026.pdf pdf_icon

SMD Type Transistors NPN Transistors 2SC5026 1.70 0.1 Features Low collector to emitter saturation voltage VCE(sat). High collector to emitter voltage VCEO. Complementary to 2SA1890 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Collector - Emitter Voltage V

8.15. Size:2005K cn sps
2sc5027t1tl.pdf pdf_icon

2SC5027T1TL ELECTRICAL CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BV Emitter -Base Breakdown Voltage I = 1mA; I = 0 7 V EBO E C BV Collector- Emitter Breakdown Voltage I = 5mA; I = 0 800 V CEO C B BV Collector- Base Breakdown Voltage I = 1mA; I = 0 850 V CBO C E Collector-Emitter Saturation Voltage I = 1.5A; I = 0.3A 2.0 V

8.16. Size:405K cn sptech
2sc5027.pdf pdf_icon

8.17. Size:213K inchange semiconductor
2sc5027.pdf pdf_icon

isc Silicon NPN Power Transistor 2SC5027 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1100 V CBO V Collector-Emitter Voltage 800 V CEO V Emitter-Base Volt

Otros transistores... 2SC5021O , 2SC5021R , 2SC5021Y , 2SC5022 , 2SC5022O , 2SC5022R , 2SC5022Y , 2SC5023 , SS8050 , 2SC5023C , 2SC5023O , 2SC5023R , 2SC5023Y , 2SC5024 , 2SC5024B , 2SC5024C , 2SC5024O .