2SC5026N . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC5026N
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 40 W
Tensión colector-base (Vcb): 1100 V
Tensión colector-emisor (Vce): 800 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 1.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 15 MHz
Capacitancia de salida (Cc): 35 pF
Ganancia de corriente contínua (hfe): 10
Paquete / Cubierta: TO220
- Selección de transistores por parámetros
2SC5026N Datasheet (PDF)
2sc5026 e.pdf

Transistor2SC5026Silicon NPN epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SA18901.5 0.14.5 0.11.6 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).High collector to emitter voltage VCEO.45Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the
2sc5026.pdf

Transistor2SC5026Silicon NPN epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SA18901.5 0.14.5 0.11.6 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).High collector to emitter voltage VCEO.45Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the
2sc5026.pdf

SMD Type TransistorsNPN Transistors2SC50261.70 0.1 Features Low collector to emitter saturation voltage VCE(sat). High collector to emitter voltage VCEO. Complementary to 2SA18900.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Collector - Emitter Voltage V
Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: 2SD882SQ-E | DTC115EEB
History: 2SD882SQ-E | DTC115EEB



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