2SC503D Todos los transistores

 

2SC503D Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC503D

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.8 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.6 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 50 MHz

Capacitancia de salida (Cc): 30 pF

Ganancia de corriente contínua (hFE): 30

Encapsulados: TO39

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2SC503D datasheet

 8.2. Size:211K  toshiba
2sc5030.pdf pdf_icon

2SC503D

 8.3. Size:60K  panasonic
2sc5036.pdf pdf_icon

2SC503D

Power Transistors 2SC5036, 2SC5036A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 4.6 0.2 Features 9.9 0.3 2.9 0.2 High-speed switching 3.2 0.1 High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package with outstanding insulation,

 8.4. Size:59K  panasonic
2sc5034.pdf pdf_icon

2SC503D

Power Transistors 2SC5034 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 4.6 0.2 9.9 0.3 2.9 0.2 Features 3.2 0.1 High collector to emitter VCEO High-speed switching Full-pack package with outstanding insulation, which can be in- stalled to the heat sink with one screw 2.6 0.1 1.2 0.15 1.45 0.15 0.7 0.1 Absol

Otros transistores... 2SC5031 , 2SC5031N , 2SC5031O , 2SC5031R , 2SC5034 , 2SC5035 , 2SC5036 , 2SC5039 , BD222 , 2SC503G , 2SC503O , 2SC503Y , 2SC504 , 2SC5047 , 2SC504G , 2SC504O , 2SC504Y .

History: BC408C | 2SB1250 | 2SB1271

 

 

 


History: BC408C | 2SB1250 | 2SB1271

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