2SC505R Todos los transistores

 8.1. Size:743K  1
 2sc500 2sc501 2sc502 2sc503 2sc504 2sc505 2sc506 2sc507 2sc508 2sc509 2sc510 2sc511.pdf

 8.2. Size:118K  toshiba
 2sc5052.pdf

 8.3. Size:78K  rohm
 2sc5053.pdf

2SC5053 Transistors Medium power transistor (50V, 1A) 2SC5053 Features Dimensions (Unit mm) 1) Low saturation voltage, typically VCE(sat) = 0.12V at IC / MPT3 IB = 500mA / 50mA 2) PC=2W (on 40 40 0.7mm ceramic board) 3) Complements the 2SA1900 (1)Base (2)Collector (3)Emitter Absolute maximum ratings (Ta=25 C) Parameter Symbol Limits Unit VCBO 60 V Collector-b

 8.4. Size:47K  rohm
 2sa1900 2sc5053.pdf

2SA1900 Transistors Transistors 2SC5053 (96-115-B352) (96-196-D352) 297 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference onl

 8.5. Size:24K  hitachi
 2sc5050.pdf

2SC5050 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 11 GHz Typ High gain, low noise figure PG = 14.0 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC5050 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collect

 8.6. Size:24K  hitachi
 2sc5051.pdf

2SC5051 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 11 GHz Typ High gain, low noise figure PG = 14.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline CMPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC5051 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collec

 8.7. Size:873K  kexin
 2sc5053.pdf

SMD Type Transistors NPN Transistors 2SC5053 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=2A Collector Emitter Voltage VCEO=50V Complementary to 2SA1900 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50

 8.8. Size:348K  kexin
 2sc5050.pdf

SMD Type Transistors NPN Transistors 2SC5050 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=50mA 1 2 Collector Emitter Voltage VCEO=8V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collect

 8.9. Size:349K  kexin
 2sc5051.pdf

SMD Type Transistors NPN Transistors 2SC5051 Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=8V 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collector - Emitter Voltage VCEO 8 V Emitter - Base Voltage VEBO 1.5 Collector Current - Continuous IC 50 mA

 8.10. Size:387K  cn shikues
 2sc5053r.pdf

2SC5053R NPN-Silicon General use Transistors 1W 1.5A 25V 4 Applications Can be used for switching and amplifying in various electrical and electronic circuit. 1 2 3 SOT-89 Maximum ratings Parameters Symbol Rating Unit Marking V VCEO 25 Collector-emitter voltage (IB=0) 2SC5053R=GD VCBO 40 V Collector-base voltage IE=0 VEBO 6 V Emitter-base voltage IC=0