2SC520 Todos los transistores

2SC5200 High power NPN epitaxial planar bipolar transistor Preliminary data Features High breakdown voltage VCEO = 230 V Typical fT = 30 MHz Application Audio power amplifier 3 2 1 Description TO-264 This device is a NPN transistor manufactured using new BiT-LA (bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity... See More ⇒

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2SC5200N Bipolar Transistors Silicon NPN Triple-Diffused Type 2SC5200N 2SC5200N 2SC5200N 2SC5200N 1. Applications 1. Applications 1. Applications 1. Applications Power Amplifiers 2. Features 2. Features 2. Features 2. Features (1) High collector voltage VCEO = 230 V (min) (2) Complementary to 2SA1943N (3) Recommended for 100-W high-fidelity audio frequency amplifier output... See More ⇒

2SC5208 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5208 High-Voltage Switching Applications Unit mm Switching Regulator Applications DC-DC Converter Applications DC-AC Inverter Applications High-speed switching tr = 1.0 s (max) ,tf = 1.5 s (max) High breakdown voltage VCEO = 400 V Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating ... See More ⇒

2SC5200 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications Unit mm High breakdown voltage VCEO = 230 V (min) Complementary to 2SA1943 Suitable for use in 100-W high fidelity audio amplifier s output stage Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 230 V Collecto... See More ⇒

2SC5200 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications Unit mm High breakdown voltage V = 230 V (min) CEO Complementary to 2SA1943 Suitable for use in 100-W high fidelity audio amplifier s output stage Maximum Ratings (Tc = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 230 V Collector-emitter ... See More ⇒

January 2009 2SC5200/FJL4315 NPN Epitaxial Silicon Transistor Applications High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features High Current Capability IC = 17A. TO-264 1 High Power Dissipation 150watts. High Frequency 30MHz. 1.Base 2.Collector 3.Emitter High Voltage VCEO=250V Wide S.O.A for reliable operation. Excel... See More ⇒

DATA SHEET www.onsemi.com NPN Epitaxial Silicon Transistor FJL4315, 2SC5200 1. Base 2. Collector 3. Emitter Features 1 High Current Capability IC = 17 A TO-264-3LD CASE 340CA High Power Dissipation 150 W High Frequency 30 MHz High Voltage VCEO = 250 V MARKING DIAGRAM Wide S.O.A. for Reliable Operation Excellent Gain Linearity for Low THD Comple... See More ⇒

UNISONIC TECHNOLOGIES CO., LTD 2SC5200 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS FEATURES * Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage. * Complementary to UTC 2SA1943 ORDERING INFORMATION Order Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC5200-x-T3L-T 2SC5200-x-T3L-T TO-3PL B C E Tube ww... See More ⇒

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ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble ... See More ⇒

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RoHS 2SC5200BL Series RoHS SEMICONDUCTOR Nell High Power Products Silicon NPN triple diffusion planar transistor 15A/230V/150W 5.00 20.00 0.20 18.00 3.30 0.20 TO-3PL FEATURES High breakdown voltage, VCEO = 230V (min) Complementary to 2SA1943BL 0.60 3.20 TO-3PL package which can be installed to the 5.45 0.05 5.45 0.05 heat sink with one screw 1 2 3 APPLICATIONS Suit... See More ⇒

SMD Type Transistors NPN Transistors 2SC5209 1.70 0.1 Features High hFE hFE=600 to 1800 High breakdown voltage Small package for mounting 0.42 0.1 0.46 0.1 Complementary to 2SA1944 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCEO 50 V E... See More ⇒

Silicon NPN transistor Features Power Amplifier Applications Complementary to 2SA1943 High collector voltage VCEO=230V (min) Recommended for 100-W high-fidelity audio frequency amplifier Output stage Note Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this produc... See More ⇒

2SC5200T7TL Silicon NPN Power Transistor DESCRIPTION High Current Capability High Power Dissipation High Collector-Emitter Breakdown Voltage- V = 230V(Min) (BR)CEO Complement to Type 2SA1943 APPLICATIONS Power amplifier applications Recommend for 100W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER... See More ⇒

2SC5200 Minos High Power Products NPN TRANSISTORS Features Power Amplifier Applications Complementaryto 2SA1943 Highcollector voltage VCEO=230V (min) Recommendedfor 100-Whigh-fidelity audiofrequency amplifier Output stage Note Using continuously under heavy loads (e.g. theapplication of hightemperature/current/voltageandthe significant change in temperature, etc.) may causethis pro... See More ⇒

SPTECH Product Specification INCHANGE Semiconductor isc Product Specification SPTECH Silicon NPN Power Transistor 2SC5200 DESCRIPTION High Current Capability High Power Dissipation High Collector-Emitter Breakdown Voltage- V = 230V(Min) (BR)CEO Complement to Type 2SA1943 APPLICATIONS Power amplifier applications Recommend for 100W high fidelity audio frequency amplifie... See More ⇒

isc Silicon NPN Power Transistor 2SC5200N DESCRIPTION High Current Capability High Power Dissipation High Collector-Emitter Breakdown Voltage- V = 230V(Min) (BR)CEO Complement to Type 2SA1943N Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 100W high fidelity audio frequency am... See More ⇒

isc Silicon NPN Power Transistor 2SC5200H DESCRIPTION High Current Capability High Power Dissipation High Collector-Emitter Breakdown Voltage- V = 300V(Min) (BR)CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 100W high fidelity audio frequency amplifier output stage applicati... See More ⇒

isc Silicon NPN Power Transistor 2SC5200 DESCRIPTION High Current Capability High Power Dissipation High Collector-Emitter Breakdown Voltage- V = 230V(Min) (BR)CEO Complement to Type 2SA1943 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 100W high fidelity audio frequency ampl... See More ⇒