2SC5237 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SC5237Silicon NPN EpitaxialApplicationHigh frequency amplifierFeatures Excellent high frequency characteristicsfT = 400 MHz typ High voltage and low output capacitanceVCEO = 250 V, Cob = 3.5 pF typ Suitable for wide band video amplifierOutlineTO-126FM1. Emitter 2. Collector 3. Base1232SC5237Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratin

2SC5232 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC5232 General Purpose Amplifier Applications Unit: mm Switching and Muting Switch Application Low saturation voltage: VCE (sat) (1) = 15 mV (typ.) @I = 10 mA/I = 0.5 mA C B Large collector current: I = 500 mA (max) CMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitColle

2SC5233 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC5233 General Purpose Amplifier Applications Unit: mm Switching and Muting Switch Application Low saturation voltage: VCE (sat) (1) = 15 mV (typ.) @I = 10 mA/I = 0.5 mA C B Large collector current: I = 500 mA (max) CMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitColle

Ordering number : ENA1077 2SC5231ASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorVHF to UHF Wide-Band Low-Noise2SC5231AAmplifier ApplicationsFeatures Low-noise : NF=1.0dB typ (f=1GHz). High gain : S21e2=12dB typ (f=1GHz). High cut-off frequency : fT=7GHz typ. Ultrasmall-sized package permitting applied sets to be made small and slim.

Ordering number:EN5046NPN Epitaxial Planar Silicon Transistor2SC5230VHF to UHF Wide-Band Low-NoiseAmplifier ApplicationsFeatures Package Dimensions Low noise : NF=1.0dB typ (f=1GHz).unit:mm2 High gain : S21e =10.5dB typ (f=1GHz).2004B High cutoff frequency : fT=6.5GHz typ.[2SC5230]5.04.04.00.450.50.440.451 : Base2 : Emitter3 : Collecto

Ordering number:EN5036BNPN Epitaxial Planar Silicon Transistor2SC5231VHF to UHF Wide-Band Low-NoiseAmplifier ApplicationsFeatures Package Dimensions Low noise : NF=1.0dB typ (f=1GHz).unit:mm2 High gain : S21e =12dB typ (f=1GHz).2106A High cutoff frequency : fT=7GHz typ.[2SC5231] Very small-sized package permiting 2SC5231-0.750.30.6applied set

Ordering number:EN5126NPN Triple Diffused Planar Silicon Transistor2SC5238Ultrahigh-Definition Color DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High breakdown voltage (VCBO=1500V).2111A High reliability (Adoption of HVP process).[2SC5238] Adoption of MBIT process.20.0 5.01.751.02.91.

Ordering number : ENA1077A2SC5231ARF Transistorhttp://onsemi.com10V, 70mA, fT=7GHz, NPN Single SMCPFeatures Low-noise : NF=1.0dB typ (f=1GHz) High gain 2 : S21e =12dB typ (f=1GHz) High cut-off frequency : fT=7GHz typ Ultrasmall-sized package permitting applied sets to be made small and slimSpecificationsAbsolute Maximum Ratings at Ta=25CParamete

2SC5239Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)Application : Switching Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-25(TO220)Symbol 2SC5239 Symbol Conditions 2SC5239 UnitUnit0.24.80.210.20.12.0VCBO 900 ICBO VCB=800V 100max AVVCEO 550 IEB

SMD Type TransistorsNPN Transistors2SC5232SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=500mA1 2 Collector Emitter Voltage VCEO=12V+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collec

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5239DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 550V(Min)(BR)CEOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25