2SC530A Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC530A
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.1 W
Tensión colector-base (Vcb): 30 V
Tensión colector-emisor (Vce): 20 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 125 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 115 MHz
Ganancia de corriente contínua (hFE): 75
Encapsulados: TO92
Búsqueda de reemplazo de 2SC530A
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2SC530A datasheet
8.3. Size:40K sanyo
2sc5303.pdf 
Ordering number ENN6177 NPN Triple Diffused Planar Silicon Transistor 2SC5303 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High breakdown voltage (VCBO=1500V). 2111A High reliability (Adoption of HVP process). [2SC5303] Adoption of MBIT process. 20.0 5.0 1.75 1.0 2.9 1.2
8.4. Size:43K sanyo
2sc5304ls.pdf
Ordering number ENN5883A NPN Triple Diffused Planar Silicon Transistor 2SC5304LS Inverter Lighting Applications Features Package Dimensions High breakdown voltage (VCBO=1000V). unit mm High reliability (Adoption of HVP process). 2079D Adoption of MBIT process. [2SC5304] 10.0 4.5 3.2 2.8 0.9 1.2 1.2 0.75 0.7 1 Base 1 2 3 2 Collector 3 Emitter Specifications 2.55
8.5. Size:96K sanyo
2sc5301.pdf
Ordering number EN5417A NPN Triple Diffused Planar Silicon Transistor 2SC5301 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High breakdown voltage (VCBO=1500V). 2111A High reliability (Adoption of HVP process). [2SC5301] Adoption of MBIT process. 20.0 5.0 1.75 1.0 2.9 1
8.6. Size:36K sanyo
2sc5304.pdf
Ordering number EN5883 NPN Triple Diffused Planar Silicon Transistor 2SC5304 Inverter Lighting Applications Features Package Dimensions High breakdown voltage (VCBO=1000V). unit mm High reliability (Adoption of HVP process). 2079B Adoption of MBIT process. [2SC5304] 4.5 10.0 2.8 3.2 0.9 0.7 1.2 0.75 1 Base 1 2 3 2 Collector 3 Emitter 2.55 2.55 SANYO TO-220FI
8.7. Size:98K sanyo
2sc5300.pdf
Ordering number EN5416A NPN Triple Diffused Planar Silicon Transistor 2SC5300 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High breakdown voltage (VCBO=1500V). 2039D High reliability (Adoption of HVP process). [2SC5300] Adoption of MBIT process. 16.0 5.6 3.4 3.1 2.8 2
8.8. Size:89K sanyo
2sc5302.pdf
Ordering number EN5363B NPN Triple Diffused Planar Silicon Transistor 2SC5302 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions Fast speed (tf=100ns typ). unit mm High breakdown voltage (VCBO=1500V). 2039D High reliability (adoption of HVP process). [2SC5302] Adoption of MBIT process. 16.0 5.6 3.4 3.1 2.8 2.0
8.9. Size:42K sanyo
2sc5305ls.pdf
Ordering number ENN5884A NPN Triple Diffused Planar Silicon Transistor 2SC5305LS Inverter Lighting Applications Features Package Dimensions High breakdown voltage (VCBO=1200V). unit mm High reliability (Adoption of HVP process). 2079D Adoption of MBIT process. [2SC5305] 10.0 4.5 3.2 2.8 0.9 1.2 1.2 0.75 0.7 1 Base 1 2 3 2 Collector 3 Emitter Specifications 2.55
8.10. Size:34K sanyo
2sc5305.pdf
Ordering number EN5884 NPN Triple Diffused Planar Silicon Transistor 2SC5305 Inverter Lighting Applications Features Package Dimensions High breakdown voltage (VCBO=1200V). unit mm High reliability (Adoption of HVP process). 2079B Adoption of MBIT process. [2SC5305] 4.5 10.0 2.8 3.2 0.9 0.7 1.2 0.75 1 Base 1 2 3 2 Collector 3 Emitter 2.55 2.55 SANYO TO-220FI
8.11. Size:156K utc
2sc5305.pdf
UTC 2SC5305 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCHING TRANSISTOR FEATURES * High hFE for Low base drive requirement * Suitable for half bridge light ballast Applications 1 * Built-in Free-wheeling Diode makes it specially suitable for light ballast Applications * Well controlled storage-time spread for all range of hFE TO-220 1 Base 2 Colle
8.12. Size:877K kexin
2sc5307.pdf
SMD Type Transistors NPN Transistors 2SC5307 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=400V Marking AL 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 400 Collector - Emitter Voltage VCEO 400 V Emit
8.13. Size:211K inchange semiconductor
2sc5302.pdf
isc Silicon NPN Power Transistor 2SC5302 DESCRIPTION High Breakdown Voltage V = 1500V (Min) CBO High Speed Switching High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for inverter lighting applications. Absolute maximum ratings (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V
8.14. Size:212K inchange semiconductor
2sc5305.pdf
isc Silicon NPN Power Transistor 2SC5305 DESCRIPTION High Breakdown Voltage V = 1200V (Min) (BR)CBO High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for inverter lighting applications. Absolute maximum ratings (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1200 V CBO V Collect
Otros transistores... 2SC5271, 2SC5273, 2SC528, 2SC5287, 2SC529, 2SC529A, 2SC53, 2SC530, 2SC5200, 2SC531, 2SC531A, 2SC532, 2SC533, 2SC5333, 2SC534, 2SC535, 2SC535P
