2SC555 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC555
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 4 W
Tensión colector-base (Vcb): 55 V
Tensión colector-emisor (Vce): 30 V
Tensión emisor-base (Veb): 3 V
Corriente del colector DC máxima (Ic): 0.4 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 400 MHz
Ganancia de corriente contínua (hfe): 10
Paquete / Cubierta: TO39
Búsqueda de reemplazo de transistor bipolar 2SC555
2SC555 Datasheet (PDF)
2sc5551.pdf
Ordering number:ENN6328NPN Epitaxial Planar Silicon Transistor2SC5551High-Frequency Medium-OutputAmplifier ApplicationsFeatures Package Dimensions High fT : (fT=3.5GHz typ).unit:mm Large current : (IC=300mA).2038A Large allowable collector dissipation (1.3W max).[2SC5551]4.51.51.60.4 0.53 2 10.41.53.01 : Base0.752 : Collector3 : EmitterSA
2sc5551a.pdf
Ordering number : ENA1118 2SC5551ASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorHigh-Frequency Medium-Output2SC5551AAmplifier ApplicationsFeatures High fT : (fT=3.5GHz typ). Large current : (IC=300mA). Large allowable collector dissipation (1.3W max).SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings Un
2sc5551ae 2sc5551af.pdf
Ordering number : ENA1118A2SC5551ARF Transistorhttp://onsemi.com30V, 300mA, fT=3.5GHz, NPN Single PCPFeatures High fT : (fT=3.5GHz typ) Large current : (IC=300mA) Large allowable collector dissipation (1.3W max)SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage VCBO 40 VCollector-to-Emitter Volta
2sc5553.pdf
Power Transistors2SC5553Silicon NPN triple diffusion mesa typeUnit: mmFor horizontal deflection output15.50.5 3.00.3 3.20.155 Features High breakdown voltage, and high reliability through the use of aglass passivation layer55 High-speed switching(4.0)52.00.2 Wide area of safe operation (ASO)1.10.10.70.1 Absolute Maximum
2sc5556.pdf
Transistors2SC5556Silicon NPN epitaxial planar typeFor UHF band low-noise amplificationUnit: mm0.40+0.100.050.16+0.100.06 Features3 Low noise figure NF High transition frequency fT Mini type package, allowing downsizing of the equipment and1 2automatic insertion through the tape packing and the magazinepacking (0.95) (0.95)1.90.12.90+0.20
2sc5552.pdf
Power Transistors2SC5552Silicon NPN triple diffusion mesa typeUnit: mmFor horizontal deflection output15.50.5 3.00.3 3.20.155 Features High breakdown voltage, and high reliability through the use of aglass passivation layer55 High-speed switching(4.0)52.00.2 Wide area of safe operation (ASO)1.10.10.70.1 Absolute Maximum
2sc5554.pdf
2SC5554Silicon NPN EpitaxialVHF / UHF wide band amplifierADE-208-692 (Z)1st. EditionOct. 1998Features Super compact package;(1.4 0.8 0.59mm) Capable low voltage operation ;(VCE = 1V)OutlineMFPAK3121. Emitter2. Base3. CollectorNote: Marking is YH-.2SC5554Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base
2sc5555.pdf
2SC5555Silicon NPN EpitaxialVHF / UHF wide band amplifierADE-208-693 (Z)1st. EditionNov. 1998Features Super compact package;(1.4 0.8 0.59mm) Capable low voltage operation ;(VCE = 1V)OutlineMFPAK3121. Emitter2. Base3. CollectorNote: Marking is ZD-.2SC5555Absolute Maximum Ratings (Ta = 25 C)Item Symbol Ratings UnitCollector to bas
2sc5552.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5552DESCRIPTIONHigh Breakdown VoltageHigh Switching SpeedLow Saturation VoltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSCharacter display horizontal deflection outputABSOLUTE MAXIMUM RATINGS(T =25)
Otros transistores... 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , TIP127 , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 , 2SA1815-5 , 2SA182 , 2SA1822 , 2SA183 .
