2SC563A Todos los transistores

 

2SC563A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC563A

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.3 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 40 V

Tensión emisor-base (Veb): 4 V

Corriente del colector DC máxima (Ic): 0.025 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (ft): 275 MHz

Capacitancia de salida (Cc): 0.5 pF

Ganancia de corriente contínua (hfe): 38

Paquete / Cubierta: TO72

Búsqueda de reemplazo de transistor bipolar 2SC563A

 

2SC563A Datasheet (PDF)

 8.1. Size:42K  sanyo
2sc5638.pdf

2SC563A 2SC563A

Ordering number:ENN6466NPN Triple Diffused Planar Silicon Transistor2SC5638Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High breakdown voltage (VCBO=1500V).2174 High reliability (Adoption of HVP process).[2SC5638] Adoption of MBIT process.3.4 5.616.03.12.82.0 2

 8.2. Size:42K  sanyo
2sc5639.pdf

2SC563A 2SC563A

Ordering number:ENN6467NPN Triple Diffused Planar Silicon Transistor2SC5639Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High breakdown voltage (VCBO=1500V).2174 High reliability (Adoption of HVP process).[2SC5639] Adoption of MBIT process.3.4 5.616.03.12.82.0 2

 8.3. Size:42K  sanyo
2sc5637.pdf

2SC563A 2SC563A

Ordering number:ENN6465NPN Triple Diffused Planar Silicon Transistor2SC5637Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High breakdown voltage (VCBO=1500V).2174 High reliability (Adoption of HVP process).[2SC5637] Adoption of MBIT process.3.4 5.616.03.12.82.0 2

 8.4. Size:49K  panasonic
2sc5632.pdf

2SC563A 2SC563A

Transistors2SC5632Silicon NPN epitaxial planar typeFor high-frequency amplification and switchingUnit: mm0.15+0.100.3+0.10.050.0 Features3 High transition frequency fT S-Mini type package, allowing downsizing of the equipmentand automatic insertion through the tape packing1 2(0.65) (0.65)1.30.12.00.2 Absolute Maximum Ratings Ta = 25C

 8.5. Size:75K  hitachi
2sc5631.pdf

2SC563A 2SC563A

2SC5631Silicon NPN EpitaxialUHF / VHF Wide Band AmplifierADE-208-981A (Z)2nd. EditionMar. 2001Features High gain bandwidth productfT = 11 GHz typ. High power gain and low noise figure ;PG = 10 dB typ. , NF = 1.2 dB typ. at f = 900 MHzOutlineUPAK12341. Base2. Collector3. Emitter4. CollectorNote: Marking is JR.2SC5631Absolute Maximum Rati

 8.6. Size:130K  isahaya
2sc5635.pdf

2SC563A 2SC563A

:mm 2.10.4250.4251.25 1

 8.7. Size:125K  isahaya
2sc5633.pdf

2SC563A 2SC563A

SMALL-SIGNAL TRANSISTOR 2SC5633 FOR HIGH FREQUENCY AMPLIFY APPLICATIONSILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING Unit 2SC5633 is a super mini package resin sealed 4.6 MAXsilicon NPN epitaxial transistor, 1.51.6It is designed for high voltage application. CE B0.53 FEATURE 0.4MAXLow collector to emitter saturation voltage. 0.48

 8.8. Size:102K  isahaya
2sc5636.pdf

2SC563A 2SC563A

:mm 1.60.40.40.8 1

 8.9. Size:127K  isahaya
2sc5634.pdf

2SC563A 2SC563A

:mm 2.50.50.51.5 1

 8.10. Size:2204K  lrc
l2sc5635wt1g.pdf

2SC563A 2SC563A

LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierTransistor FeaturesL2SC5635WT1G1.High gain bandwidth product.(Typ.fT=8.0GHz)2.High gain,low noise S-L2SC5635WT1G3.Can operate at low voltage4.We declare that the material of product compliance with RoHS requirements.35.S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC

 8.11. Size:44K  lrc
l2sc5635lt1g.pdf

2SC563A 2SC563A

LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierTransistor FeaturesL2SC5635LT1G1.High gain bandwidth product.(Typ.fT=8.0GHz)S-L2SC5635LT1G2.High gain,low noise3.Can operate at low voltage4.We declare that the material of product compliance with RoHS requirements.4.S- Prefix for Automotive and Other Applications Requiring Unique Site3and Control Change Requirements;

Otros transistores... 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , TIP127 , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 , 2SA1815-5 , 2SA182 , 2SA1822 , 2SA183 .

 

 
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