2SC578 Todos los transistores

 0.1. Size:178K  toshiba
 2sc5784.pdf

2SC5784 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5784 Industrial Applications High-Speed Switching Applications Unit mm DC-DC Converter Applications High DC current gain hFE = 400 to 1000 (I = 0.15 A) C Low collector-emitter saturation voltage V = 0.12 V (max) CE (sat) High-speed switching t = 45 ns (typ.) f Maximum Ratings (Ta = = 25 C) = =

 0.2. Size:182K  toshiba
 2sc5785.pdf

2SC5785 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5785 Industrial Applications High-Speed Switching Applications Unit mm DC-DC Converter Applications Strobe Applications High DC current gain hFE = 400 to 1000 (I = 0.2 A) C Low collector-emitter saturation voltage V = 0.12 V (max) CE (sat) High-speed switching t = 25 ns (typ.) f Maximum Ratings (T

 0.3. Size:94K  nec
 2sc5787.pdf

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5787 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES Ideal for 3 GHz or higher OSC applications Low noise, high gain fT = 20 GHz TYP., S21e 2 = 13 dB TYP. @ VCE = 1 V, IC = 20 mA, f = 2 GHz NF = 1.4 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz, ZS = Zopt UHS0 technology (fT = 25 GHz) adopte

 0.4. Size:95K  nec
 2sc5786.pdf

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5786 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES Ideal for 3 GHz or higher OSC applications Low noise, high gain fT = 20 GHz TYP., S21e 2 = 12 dB TYP. @ VCE = 1 V, IC = 20 mA, f = 2 GHz NF = 1.4 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz, ZS = Zopt UHS0 technolog

 0.5. Size:73K  panasonic
 2sc5788.pdf

Power Transistors 2SC5788 Silicon NPN epitaxial planar type Unit mm Power supply for Audio & Visual equipments 10.0 0.2 5.0 0.1 1.0 0.2 such as TVs and VCRs Industrial equipments such as DC-DC converters Features 1.2 0.1 C 1.0 High-speed switching (tstg storage time/tf fall time is short) 1.48 0.2 2.25 0.2 Low collector to emitter saturation voltage VCE(sat)

 0.6. Size:1226K  jiangsu
 2sc5785.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SC5785 TRANSISTOR NPN SOT-89-3L 1 2 3 FEATURES 1. BASE High-Speed Switching Applications 1 DC-DC Converter Applications 2. COLLETOR 2 Strobe Applications 3 3. EMITTER Marking 3E MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VC

 0.7. Size:1442K  kexin
 2sc5785.pdf

SMD Type Transistors NPN Transistors 2SC5785 1.70 0.1 Features High DC current gain hFE = 400 to 1000 Low collector-emitter saturation voltage High-speed switching 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 10 V Emitte