2SC58 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC58
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.6 W
Tensión colector-base (Vcb): 60 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.06 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 125 MHz
Capacitancia de salida (Cc): 2.5 pF
Ganancia de corriente contínua (hFE): 50
Encapsulados: TO5
Búsqueda de reemplazo de 2SC58
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2SC58 datasheet
2sc5886a.pdf
2SC5886A TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886A High-Speed Switching Applications Unit mm DC/DC Converter Applications High DC current gain hFE = 400 to 1000 (IC = 0.5 A) Low collector-emitter saturation VCE (sat) = 0.22 V (max) High-speed switching tf = 95 ns (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Coll
2sc5810.pdf
2SC5810 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5810 High-Speed Switching Applications Unit mm DC-DC Converter Applications Strobe Applications High DC current gain hFE = 400 to 1000 (I = 0.1 A) C Low collector-emitter saturation voltage V = 0.17 V (max) CE (sat) High-speed switching t = 85 ns (typ.) f Maximum Ratings (Ta = 25 C) Characteristi
2sc5819.pdf
2SC5819 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5819 Industrial Applications High-Speed Switching Applications Unit mm DC-DC Converter Applications High DC current gain hFE = 400 to 1000 (I = 0.15 A) C Low collector-emitter saturation voltage V = 0.12 V (max) CE (sat) High-speed switching t = 45 ns (typ.) f Maximum Ratings (Ta = = 25 C) = =
2sc5859.pdf
2SC5859 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5859 HORIZONTAL DEFLECTION OUTPUT FOR Unit mm HDTV, DIGITAL TV, PROJECTION TV High Voltage V = 1700 V CBO Low Saturation Voltage VCE (sat) = 3 V (max) High Speed tf(2) = 0.1 s (Typ.) MAXIMUM RATINGS (Tc = 25 C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 1700 V Collector-Emi
2sc5858.pdf
2SC5858 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5858 HORIZONTAL DEFLECTION OUTPUT FOR Unit mm HDTV, DIGITAL TV, PROJECTION TV High Voltage VCBO = 1700 V Low Saturation Voltage VCE (sat) = 1.5 V (Max) High Speed tf(2) = 0.1 s (Typ.) ABSOLUTE MAXIMUM RATINGS (Tc = 25 C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 1700 V C
2sc5856.pdf
2SC5856 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5856 HORIZONTAL DEFLECTION OUTPUT FOR Unit mm SUPER HIGH RESOLUTION DISPLAY, COLOR TV, DIGITAL TV HIGH SPEED SWITCHING APPLICATIONS High Voltage VCBO = 1500 V Low Saturation Voltage VCE (sat) = 3 V (max) High Speed tf(2) = 0.1 s (typ.) ABSOLUTE MAXIMUM RATINGS (Tc = 25 C) CHARACTERISTIC S
2sc5855.pdf
2SC5855 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5855 HORIZONTAL DEFLECTION OUTPUT FOR Unit mm SUPER HIGH RESOLUTION DISPLAY, COLOR TV, DIGITAL TV HIGH SPEED SWITCHING APPLICATIONS High Voltage VCBO = 1500 V Low Saturation Voltage VCE (sat) = 3 V (max) High Speed tf(2) = 0.1 s (typ.) MAXIMUM RATINGS (Tc = 25 C) CHARACTERISTIC SYMBOL RATING
2sc5886.pdf
2SC5886 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886 High-Speed Swtching Applications Unit mm DC-DC Converter Applications High DC current gain h = 400 to 1000 (I = 0.5 A) FE C Low collector-emitter saturation V = 0.22 V (max) CE (sat) High-speed switching t = 55 ns (typ.) f Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collect
2sa2099 2sc5888.pdf
Ordering number EN7331A 2SA2099 / 2SC5888 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA2099 / 2SC5888 High-Current Switching Applications Applications Relay drivers, lamp drivers, motor drivers. Features Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. S
2sc5888.pdf
Ordering number ENN7331 2SA2099 / 2SC5888 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2099 / 2SC5888 High-Current Switching Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers. unit mm 2041A Features [2SA2099 / 2SC5888] Adoption of MBIT processes. 4.5 10.0 2.8 Large current capacitance. 3.2 Low collector-to-emitter
2sa2098 2sa2098 2sc5887.pdf
Ordering number ENN7495 2SA2098 / 2SC5887 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2098 / 2SC5887 High-Current Switching Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers. unit mm 2041A Features [2SA2098 / 2SC5887] 4.5 Adoption of MBIT processes. 10.0 2.8 Large current capacitance. 3.2 Low collector-to-emitter satu
2sc5899.pdf
Ordering number ENN7538 2SC5899 NPN Triple Diffused Planar Silicon Transistor 2SC5899 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1700V). 2174A High reliability(Adoption of HVP process). [2SC5899] Adoption of MBIT process. 5.6 3.4 16.0 3.1 2.8 2.0 2.
2sc5808.pdf
Ordering number ENN7079 2SC5808 NPN Triple Diffused Planar Silicon Transistor 2SC5808 Switching Power Supply Applications Features Package Dimensions High breakdown voltage. unit mm High speed switching. 2045B Wide ASO. [2SC5808] Adoption of MBIT process. 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 Base 2 Collector 1 2 3 3 Emitter 4 Collector
2sc5850.pdf
To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM
2sc5820.pdf
To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM
2sc5890.pdf
To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM
2sc5894.pdf
To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM
2sc5828.pdf
To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM
2sc5843.pdf
DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR 2SC5843 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE) FEATURES Ideal for low noise, high-gain amplification NF = 0.9 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz Maximum stable power gain MSG = 20.0 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz SiGe technology (fT
2sc5801.pdf
DATA SHEET NPN SILICON RF TRANSISTOR 2SC5801 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES Low phase distortion, low voltage operation Ideal for OSC applications 3-pin lead-less minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5801 50 pcs (Non reel) 8 mm wide embossed taping 2SC5801-T3 10 kpcs/re
2sc5800.pdf
DATA SHEET NPN SILICON RF TRANSISTOR 2SC5800 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES Low phase distortion, low voltage operation Ideal for OSC applications Flat-lead 3-pin thin-type ultra super minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5800 50 pcs (Non reel) 8 mm
2sc5876u3.pdf
2SC5876U3 Datasheet Medium power transistor (60V, 0.5A) lOutline l SOT-323 Parameter Value SC-70 VCEO 60V IC 500mA UMT3 lFeatures lInner circuit l l 1)High speed switching. (Tf Typ. 80ns at IC=500mA) 2)Low saturation voltage, typically (Typ. 150mV at IC=100mA, IB=10mA) 3)Strong discharge power for inductive load and ca
2sc5876.pdf
2SC5876 Datasheet Medium power transistor (60V, 0.5A) lOutline l Parameter Value UMT3 VCEO 60V IC 500mA SOT-323 SC-70 lFeatures l 1)High speed switching. lInner circuit l (Tf Typ. 80ns at IC=500mA) 2)Low saturation voltage, typically (Typ. 150mV at IC=100mA, IB=10mA) 3)Strong discharge power for
2sc5875.pdf
2SC5875 Transistors Power transistor (30V, 2A) 2SC5875 External dimensions (Unit mm) Features 1) High speed switching. ATV 2.5 6.8 (Tf Typ. 20ns at IC = 2A) 2) Low saturation voltage, typically (Typ. 200mV at IC = 1.0A, IB = 0.1A) 0.65Max. 3) Strong discharge power for inductive load and 0.5 (1) (2) (3) capacitance load. 2.54 2.54 1.05 0.45 (1) Emitter
2sc5824.pdf
2SC5824 Datasheet NPN 3.0A 60V Middle Power Transistor Outline MPT3 Parameter Value VCEO 60 Base IC 3A Collector Emitter 2SC5824 Features (SC-62) 1) Suitable for Middle Power Driver 2) Complementary PNP Types 2SA2071 3) Low VCE(sat) VCE(sat)=0.50V(Max.) (IC/IB=2A/200mA) 4) Lead Free/RoHS Compliant. Inner circuit Collector Applications Motor drive
2sc5825.pdf
2SC5825 Transistors Power transistor (60V, 3A) 2SC5825 Dimensions (Unit mm) Features 1) High speed switching. CPT3 (Tf Typ. 30ns at IC = 3A) (SC-63) 2) Low saturation voltage, typically (Typ. 200mV at IC = 2A, IB = 0.2mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2073 (1) Base (2) Collector Applica
2sc5868.pdf
Medium power transistor (60V, 0.5A) 2SC5868 Features Dimensions (Unit mm) 1) High speed switching. TSMT3 2.8 (Tf Typ. 80ns at IC = 500mA) 1.6 2) Low saturation voltage, typically (Typ. 75mV at IC = 100mA, IB = 10mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2090 (1) Base (2) Emitter 0.3 0.6 Each lead has sam
2sc5865.pdf
High voltage discharge, High speed switching, Low Noise (60V, 1A) 2SC5865 Features Dimensions (Unit mm) 1) High speed switching. ( Tf Typ. 50ns at IC = 1.0A) TSMT3 1.0MAX 2) Low saturation voltage, typically. 2.9 0.85 (Typ. 200mV at IC = 500mA, IB = 50mA) 0.4 0.7 3) Strong discharge power for inductive load and ( ) 3 capacitance load. 4) Low Noise. 5) Co
2sc5866.pdf
2SC5866 Datasheet Medium power transistor (60V, 2A) lOutline l Parameter Value TSMT3 VCEO 60V IC 2A SOT-346T SC-96 lFeatures l 1)High speed switching. lInner circuit l (tf Typ. 35ns at IC=2A) 2)Low saturation voltage, typically (Typ. 200mV at IC=1.0A, IB=100mA) 3)Storong discharge power for indu
2sc5877s.pdf
2SC5877S Transistors Power transistor (60V, 0.5A) 2SC5877S External dimensions (Unit mm) Features 1) High speed switching. 4.0 2.0 SPT (Tf Typ. 80ns at IC = 500mA) 2) Low saturation voltage, typically 0.45 (Typ. 150mV at IC = 100mA, IB = 10mA) 3) Strong discharge power for inductive load and 2.5 0.5 0.45 capacitance load. 5.0 (1) Emitter 4) Complements t
2sc5874s.pdf
2SC5874S Transistors Medium power transistor (30V, 1.0A) 2SC5874S External dimensions (Unit mm) Features 1) High speed switching. 4.0 2.0 SPT (Tf Typ. 35ns at IC = 1.0A) 2) Low saturation voltage, typically 0.45 (Typ. 150mV at IC = 1.0A, IB = 100mA) 3) Strong discharge power for inductive load and 2.5 0.5 0.45 capacitance load. 5.0 (1) Emitter 4) Complem
2sc5826.pdf
2SC5826 Transistors Power transistor (60V, 3A) 2SC5826 External dimensions (Unit mm) Features 1) High speed switching. ATV 2.5 6.8 (Tf Typ. 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. 200mV at IC = 2A, IB = 0.2mA) 0.65Max. 3) Strong discharge power for inductive load and 0.5 capacitance load. (1) (2) (3) (1) Emitter 2.54 2.54 4) Compleme
2sc5880.pdf
2SC5880 Transistors Power transistor (60V, 2A) 2SC5880 Dimensions (Unit mm) Features 1) High speed switching. ATV (tf Typ. 35ns at IC = 2A) 2) Low saturation voltage, typically (Typ. 200mV at IC = 1.0A, IB = 100mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2093 (1) Emitter (2) Collector Taping specifications
2sc5876fra.pdf
AEC-Q101 Qualified Medium power transistor (60V, 0.5A) 2SC5876FRA Features Dimensions (Unit mm) 1) High speed switching. (Tf Typ. 80ns at IC = 500mA) UMT3 2) Low saturation voltage, typically (Typ. 150mV at IC = 100mA, IB = 10mA) 1.25 3) Strong discharge power for inductive load and 2.1 capacitance load. 2SA2088FRA 4) Complements the 2SA2088 0.1Min. Each lea
2sc5839.pdf
Transistors 2SC5839 Silicon NPN epitaxial planar type For low-voltage high-frequency amplification Unit mm Features High transition frequency fT 3 2 Suitable for high-density mounting and downsizing of the equip- 1 ment for Ultraminiature leadless package 0.39+0.01 1.00 0.05 -0.03 0.6 mm 1.0 mm (height 0.39 mm) 0.25 0.05 0.25 0.05 1 Absolute Maximum Ratings
2sc5809.pdf
Power Transistors 2SC5809 Silicon NPN triple diffusion planar type Unit mm 4.6 0.2 For high breakdown voltage high-speed switching 9.9 0.3 2.9 0.2 3.2 0.1 Features High-speed switching (Fall time tf is short) High collector-base voltage (Emitter open) VCBO Low collector-emitter saturation voltage VCE(sat) TO-220D built-in Excellent package with withstan
2sc5895.pdf
Power Transistors 2SC5895 Silicon NPN epitaxial planar type Unit mm 4.6 0.2 Power supply for Audio & Visual equipments 9.9 0.3 2.9 0.2 such as TVs and VCRs Industrial equipments such as DC-DC converters 3.2 0.1 Features High-speed switching (tstg storage time/tf fall time is short) 1.4 0.2 Low collector-emitter saturation voltage VCE(sat) 2.6 0.1 1.6 0.2
2sc5845.pdf
Transistors 2SC5845 Silicon NPN epitaxial planar type For general amplification Unit mm 0.40+0.10 0.05 0.16+0.10 0.06 Features 3 High forward current transfer ratio hFE Mini type package, allowing downsizing of the equipment and au- tomatic insertion through the tape packing and the magazine pack- 1 2 ing (0.95) (0.95) 1.9 0.1 2.90+0.20 0.05 Absolu
2sc5840.pdf
Power Transistors 2SC5840 Silicon NPN epitaxial planar type Unit mm 4.6 0.2 Power supply for Audio & Visual equipments 9.9 0.3 2.9 0.2 such as TVs and VCRs Industrial equipments such as DC-DC converters 3.2 0.1 Features High-speed switching (tstg storage time/tf fall time is short) 1.4 0.2 Low collector-emitter saturation voltage VCE(sat) 2.6 0.1 1.6 0.2
2sc5838.pdf
Transistors 2SC5838 Silicon NPN epitaxial planar type For UHF band low-noise amplification Unit mm Features 3 2 Suitable for high-density mounting and downsizing of the equip- ment for Ultraminiature leadless package 1 0.6 mm 1.0 mm (height 0.39 mm) 0.39+0.01 1.00 0.05 -0.03 0.25 0.05 0.25 0.05 1 Absolute Maximum Ratings Ta = 25 C Parameter Symbol Rating Unit
2sc5863.pdf
Transistors 2SC5863 Silicon NPN epitaxial planar type Unit mm For general amplification 0.40+0.10 0.05 0.16+0.10 0.06 3 Features High collector-emitter voltage (Base open) VCEO 1 2 High transition frequency fT (0.95) (0.95) 1.9 0.1 2.90+0.20 0.05 Absolute Maximum Ratings Ta = 25 C 10 Parameter Symbol Rating Unit Collector-base voltage (Emitter
2sc5846.pdf
Transistors SSSMini3-F1 Package 2SC5846 Silicon NPN epitaxial planar type For general amplification Unit mm 0.33+0.05 0.10+0.05 0.02 0.02 Features 3 High forward current transfer ratio hFE SSS-mini type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing 0.23+0.05 1 2 0.02 (0.40)(0.40) 0.80 0.05 1.20
2sc5896.pdf
Power Transistors 2SC5896 Silicon NPN epitaxial planar type Unit mm 4.6 0.2 Power supply for Audio & Visual equipments 9.9 0.3 2.9 0.2 such as TVs and VCRs Industrial equipments such as DC-DC converters 3.2 0.1 Features High-speed switching (tstg storage time/tf fall time is short) 1.4 0.2 Low collector-emitter saturation voltage VCE(sat) 2.6 0.1 1.6 0.2
2sc5841.pdf
Power Transistors 2SC5841 Silicon NPN epitaxial planar type Unit mm Power supply for Audio & Visual equipments 10.0 0.2 5.0 0.1 1.0 0.2 such as TVs and VCRs Industrial equipments such as DC-DC converters Features 1.2 0.1 C 1.0 High-speed switching (tstg storage time/tf fall time is short) 1.48 0.2 2.25 0.2 Low collector-emitter saturation voltage VCE(sat) 0.
2sc5885.pdf
Power Transistors 2SC5885 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV, CRT monitor Unit mm 9.9 0.3 4.6 0.2 2.9 0.2 Features High breakdown voltage VCBO 1 500 V 3.2 0.1 Wide safe operation area Built-in dumper diode 0.76 0.06 1.25 0.1 1.45 0.15 2.6 0.1 1.2 0.15 Absolute Maximum Ratings TC = 25 C 0.7 0.1 0.75 0.1
2sc5884.pdf
Power Transistors 2SC5884 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV Unit mm 9.9 0.3 4.6 0.2 2.9 0.2 Features High breakdown voltage VCBO 1 500 V 3.2 0.1 Wide safe operation area Built-in dumper diode 0.76 0.06 1.25 0.1 1.45 0.15 2.6 0.1 1.2 0.15 Absolute Maximum Ratings TC = 25 C 0.7 0.1 0.75 0.1 Paramet
2sc5813.pdf
Transistors 2SC5813 Silicon NPN epitaxial planar type For DC-DC converter Unit mm 0.40+0.10 0.05 0.16+0.10 0.06 Features 3 Low collector-emitter saturation voltage VCE(sat) Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing 1 2 (0.95) (0.95) 1.9 0.1 2.90+0.20 0.05 Absolute Maximum Ratings Ta = 25
2sc5889.pdf
UTC 2SC5889 NPN EPITAXIAL SILICON TRANSISTOR DC/DC CONVERTER APPLICATIONS FEATURES *Large current capacitance. *Low collector-emitter saturation voltage. *High-speed switching 1 *High allowable power dissipation. APPLICATIONS * relay drivers, lamp drivers, motor drivers, strobes. TO-92SP 1.EMITTER 2.COLLECTOR 3.BASE ABSOLUTE MAXIMUM RATINGS (Ta=25 ) PARAMETER SYMBOL
2sc5812.pdf
2SC5812 Silicon NPN Epitaxial VHF/UHF wide band amplifier ADE-208-1468(Z) Rev.0 Nov. 2001 Features High power gain, Low noise figure at low power operation S21 2 = 17 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz) Outline MFPAK 3 1 1. Emitter 2 2. Base 3. Collector Note Marking is WG . 2SC5812 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ra
2sc5849.pdf
2SC5849 Silicon NPN Epitaxial VHF/UHF wide band amplifier ADE-208-1469 (Z) Rev. 0 Nov. 2001 Features Super compact package MFPAK (1.4 x 0.8 x 0.59 mm) Outline MFPAK 3 1 2 1. Emitter 2. Base 3. Collector Note Marking is WY . 2SC5849 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage
2sc5827.pdf
2SC5827 Silicon NPN Epitaxial VHF/UHF wide band amplifier ADE 208 1464(Z) Rev.0 Nov. 2001 Features Super compact package MFPAK (1.4 x 0.8 x 0.59 mm) Outline MFPAK 3 1 2 1. Emitter 2. Base 3. Collector Note Marking is WW . 2SC5827 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter volta
2sc5804.pdf
SMALL-SIGNAL TRANSISTOR 2SC5804 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Unit 2SC5804 is a super mini package resin sealed silicon NPN epitaxial transistor, It is designed for low frequency application. 0.8 0.2 0.2 Since it is a super-thin flat lead type package,a high-density mounting are possible.
2sc5814.pdf
SMALL-SIGNAL TRANSISTOR 2SC5814 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Unit 2SC5814 is a super mini package silicon NPN epitaxial type transistor. It is designed for low frequency voltage application. FEATURE Low collector to emitter saturation voltage. VCE(sat)=0.3V max(@IC=30mA, IB=1.5mA) Fac
2sc5895.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC5895 DESCRIPTION With TO-220F package High speed switching Low collector saturation voltage APPLICATIONS Power supply for audio and visual equipments such as TVs and VCRs Industrial equipments such as DC-DC converters PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) an
2sc5802.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC5802 DESCRIPTION With TO-3P(H)IS package High voltage;high speed Wide area of safe operation APPLICATIONS For high voltage color display horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3P(H)IS) and symbol 3 Emitter Absolute maximum rati
2sc5586 2sc5830 2sc5924.pdf
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2sc5824.pdf
SMD Type Transistors NPN Transistors 2SC5824 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=3A Collector Emitter Voltage VCEO=60V High-speed switching. 0.42 0.1 0.46 0.1 Low saturation voltage Complements the 2SA2071 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Bas
2sc5886a.pdf
isc Silicon NPN Power Transistor 2SC5886A DESCRIPTION High switching speed time Low collector-to-emitter saturation voltage Fast switching speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High-Speed Switching Applications DC/DC Converter Applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V C
2sc5895.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5895 DESCRIPTION High Breakdown Voltage Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply for audio & visual equipments such as TVS and VCRS Industrial equipments such as DC-DC converters ABSOLUTE MAXIMUM
2sc5802.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5802 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage color display horizontal deflection output applications.
2sc5803.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5803 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage color display horizontal deflection output applications.
2sc5890.pdf
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC5890 DESCRIPTION High Gain Bandwidth Product f = 7.8 GHz TYP. T High power gain and low noise figure ; PG = 12 dB TYP., NF = 1.0 dB typ. @ f = 900 MHz 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in UHF VHF wide band amplifier.
2sc5885.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5885 DESCRIPTION High Breakdown Voltage Wide Area of Safe Operation Built-in Damper Diode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Horizontal deflection output for TV, CRT monitor applicaitions. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM
2sc5855.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5855 DESCRIPTION High speed switching High voltage Low saturation voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Horizontal deflection output for super high resolution Display color TV digital TV ABSOLUTE MAXIMUM RATINGS(T =25 ) a
2sc5887.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5887 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO High Speed Switching Low Saturation Voltage Complement to Type 2SA2098 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers, lamp drivers, motor drivers.
Otros transistores... 2SC572, 2SC573, 2SC574, 2SC575, 2SC576, 2SC577, 2SC578, 2SC579, 2SC2240, 2SC580, 2SC581, 2SC582, 2SC582A, 2SC583, 2SC583Z, 2SC584, 2SC585
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