2SC585 Todos los transistores

 0.1. Size:200K  toshiba
 2sc5859.pdf

2SC5859 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5859 HORIZONTAL DEFLECTION OUTPUT FOR Unit mm HDTV, DIGITAL TV, PROJECTION TV High Voltage V = 1700 V CBO Low Saturation Voltage VCE (sat) = 3 V (max) High Speed tf(2) = 0.1 s (Typ.) MAXIMUM RATINGS (Tc = 25 C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 1700 V Collector-Emi

 0.2. Size:199K  toshiba
 2sc5858.pdf

2SC5858 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5858 HORIZONTAL DEFLECTION OUTPUT FOR Unit mm HDTV, DIGITAL TV, PROJECTION TV High Voltage VCBO = 1700 V Low Saturation Voltage VCE (sat) = 1.5 V (Max) High Speed tf(2) = 0.1 s (Typ.) ABSOLUTE MAXIMUM RATINGS (Tc = 25 C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 1700 V C

 0.3. Size:235K  toshiba
 2sc5856.pdf

2SC5856 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5856 HORIZONTAL DEFLECTION OUTPUT FOR Unit mm SUPER HIGH RESOLUTION DISPLAY, COLOR TV, DIGITAL TV HIGH SPEED SWITCHING APPLICATIONS High Voltage VCBO = 1500 V Low Saturation Voltage VCE (sat) = 3 V (max) High Speed tf(2) = 0.1 s (typ.) ABSOLUTE MAXIMUM RATINGS (Tc = 25 C) CHARACTERISTIC S

 0.4. Size:194K  toshiba
 2sc5855.pdf

2SC5855 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5855 HORIZONTAL DEFLECTION OUTPUT FOR Unit mm SUPER HIGH RESOLUTION DISPLAY, COLOR TV, DIGITAL TV HIGH SPEED SWITCHING APPLICATIONS High Voltage VCBO = 1500 V Low Saturation Voltage VCE (sat) = 3 V (max) High Speed tf(2) = 0.1 s (typ.) MAXIMUM RATINGS (Tc = 25 C) CHARACTERISTIC SYMBOL RATING

 0.5. Size:85K  renesas
 2sc5850.pdf

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

 0.6. Size:188K  inchange semiconductor
 2sc5855.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5855 DESCRIPTION High speed switching High voltage Low saturation voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Horizontal deflection output for super high resolution Display color TV digital TV ABSOLUTE MAXIMUM RATINGS(T =25 ) a