2SC587A Todos los transistores

 

2SC587A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SC587A
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.3 W
   Tensión colector-base (Vcb): 45 V
   Tensión colector-emisor (Vce): 35 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.03 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 50 MHz
   Capacitancia de salida (Cc): 6 pF
   Ganancia de corriente contínua (hfe): 300
   Paquete / Cubierta: TO18

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2SC587A Datasheet (PDF)

 8.1. Size:1603K  rohm
2sc5876u3.pdf

2SC587A
2SC587A

2SC5876U3DatasheetMedium power transistor (60V, 0.5A)lOutlinel SOT-323 Parameter Value SC-70 VCEO60VIC500mAUMT3lFeatures lInner circuitl l1)High speed switching. (Tf:Typ.:80ns at IC=500mA)2)Low saturation voltage, typically (Typ.:150mV at IC=100mA, IB=10mA)3)Strong discharge power for inductive load and ca

 8.2. Size:1647K  rohm
2sc5876.pdf

2SC587A
2SC587A

2SC5876DatasheetMedium power transistor (60V, 0.5A)lOutlinelParameter Value UMT3VCEO60VIC500mASOT-323SC-70 lFeaturesl1)High speed switching.lInner circuitl (Tf:Typ.:80ns at IC=500mA)2)Low saturation voltage, typically (Typ.:150mV at IC=100mA, IB=10mA)3)Strong discharge power for

 8.3. Size:98K  rohm
2sc5875.pdf

2SC587A
2SC587A

2SC5875 Transistors Power transistor (30V, 2A) 2SC5875 External dimensions (Unit : mm) Features 1) High speed switching. ATV2.56.8(Tf : Typ. : 20ns at IC = 2A) 2) Low saturation voltage, typically :(Typ. 200mV at IC = 1.0A, IB = 0.1A) 0.65Max.3) Strong discharge power for inductive load and 0.5(1) (2) (3)capacitance load. 2.54 2.541.05 0.45(1) Emitter

 8.4. Size:98K  rohm
2sc5877s.pdf

2SC587A
2SC587A

2SC5877S Transistors Power transistor (60V, 0.5A) 2SC5877S External dimensions (Unit : mm) Features 1) High speed switching. 4.0 2.0SPT(Tf : Typ. : 80ns at IC = 500mA) 2) Low saturation voltage, typically : 0.45(Typ. 150mV at IC = 100mA, IB = 10mA) 3) Strong discharge power for inductive load and 2.50.5 0.45capacitance load. 5.0(1) Emitter4) Complements t

 8.5. Size:98K  rohm
2sc5874s.pdf

2SC587A
2SC587A

2SC5874S Transistors Medium power transistor (30V, 1.0A) 2SC5874S External dimensions (Unit : mm) Features 1) High speed switching. 4.0 2.0SPT(Tf : Typ. : 35ns at IC = 1.0A) 2) Low saturation voltage, typically : 0.45(Typ. 150mV at IC = 1.0A, IB = 100mA) 3) Strong discharge power for inductive load and 2.50.5 0.45capacitance load. 5.0(1) Emitter4) Complem

 8.6. Size:1239K  rohm
2sc5876fra.pdf

2SC587A
2SC587A

AEC-Q101 QualifiedMedium power transistor (60V, 0.5A) 2SC5876FRAFeatures Dimensions (Unit : mm)1) High speed switching. (Tf : Typ. : 80ns at IC = 500mA) UMT32) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA) 1.253) Strong discharge power for inductive load and 2.1capacitance load. 2SA2088FRA4) Complements the 2SA2088 0.1Min.Each lea

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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