2SC596 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SC596
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.8 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 30 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 200 MHz
   Capacitancia de salida (Cc): 12 pF
   Ganancia de corriente contínua (hfe): 50
   Paquete / Cubierta: TO72

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2SC596 Datasheet (PDF)

0.1. Size:30K sanyo
2sc5966.pdf

Ordering number : ENN76532SC5966NPN Triple Diffused Planar Silicon Transistor2SC5966Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High-speed. unit : mm High breakdown voltage (VCBO=1700V). 2174A High reliability (Adoption of HVP process).[2SC5966] Adoption of MBIT process.5.63.416.03.12.82.0 2.1

0.2. Size:59K sanyo
2sa2125 2sc5964.pdf

Ordering number : ENN79882SA2125 / 2SC5964PNP / NPN Epitaxial Planar Silicon Transistors2SA2125 / 2SC5964DC / DC Converter ApplicationsApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, flash.Features Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching.Specifications

0.3. Size:188K onsemi
2sa2125 2sa2125-td-h 2sc5964 2sc5964-td-h.pdf

Ordering number : EN7988B2SA2125/2SC5964Bipolar Transistorhttp://onsemi.com() () ( ) ( )50V, 3A, Low VCE sat , PNP NPN Single PCPApplicaitons DC / DC converter, relay drivers, lamp drivers, motor drivers, flashFeatures Adoption of MBIT process Large current capacity Low collector to emitter saturation voltage High-speed switching Halogen free

0.4. Size:319K onsemi
2sa2125 2sc5964.pdf