2SC612 Todos los transistores

 

2SC612 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SC612
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 20 V
   Tensión colector-emisor (Vce): 12 V
   Tensión emisor-base (Veb): 3 V
   Corriente del colector DC máxima (Ic): 0.02 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 650 MHz
   Capacitancia de salida (Cc): 2 pF
   Ganancia de corriente contínua (hfe): 80
   Paquete / Cubierta: TO72
 

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2SC612 Datasheet (PDF)

 0.1. Size:201K  toshiba
 2sc6124.pdf pdf_icon

2SC612

2SC6124 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6124 Power Amplifier Applications Unit: mmPower Switching Applications Low collector emitter saturation voltage : VCE (sat) = 0.5 V (max) (IC = 1 A) High-speed switching: tstg = 400 ns (typ.) Complementary to 2SA2206 Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO

 0.2. Size:219K  toshiba
 2sc6126.pdf pdf_icon

2SC612

2SC6126 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6126 High-Speed Switching Applications Unit : mmDC-DC Converter Applications LCD Backlighting Applications High DC current gain: hFE = 250 to 400 (IC= 0.3 A) Low collector-emitter saturation: VCE(sat) = 0.18 V (max) High-speed switching: tf = 40 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristic

 0.3. Size:150K  toshiba
 2sc6125.pdf pdf_icon

2SC612

2SC6125 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6125 High-Speed Switching Applications Unit : mmPower Amplifier Applications High DC current gain: hFE = 180 to 390 (IC = 0.5 A) Low collector-emitter saturation: VCE (sat) = 0.2 V (max) High-speed switching: tf = 15 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Collector

 0.4. Size:132K  toshiba
 2sc6127.pdf pdf_icon

2SC612

2SC6127 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6127 High Voltage Switching Applications Unit: mmHigh Voltage Amplifier Applications High voltage: VCEO = 800 V Absolute Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 800 VCollector-emitter voltage VCEO 800 VEmitter-base voltage VEBO 5 VCollector current IC 5

MOSTRAR MÁS

Otros transistores... 2SC608 , 2SC608T , 2SC609 , 2SC609T , 2SC61 , 2SC610 , 2SC611 , 2SC611N , TIP31C , 2SC612N , 2SC613 , 2SC614 , 2SC615 , 2SC616 , 2SC617 , 2SC618 , 2SC618A .

History: CH817UPNGP | MN29 | SBCP56T3G | KSA910R | CHEMT3GP | NSVMUN5331DW1T1G | BDS28C

 

 
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