2SC618 Todos los transistores

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2SC618 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC618

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-base (Vcb): 25 V

Tensión colector-emisor (Vce): 13 V

Tensión emisor-base (Veb): 3 V

Corriente del colector DC máxima (Ic): 0.02 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 300 MHz

Ganancia de corriente contínua (hfe): 20

Empaquetado / Estuche: TO72

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2SC618 Datasheet (PDF)

5.1. 2sc6123.pdf Size:306K _update

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2SC618

暫定版 データシート 2SC6123 R07DS0329JJ0100 Rev.1.00 シリコン・パワー・トランジスタ 2011.04.15 概 要 2SC6123 は,高速スイッチング用として開発された低 VCE(sat),高 hFE の NPN トランジスタですので,OA, FA 機器等の DC/DC コンバータや各種アクチュエータ駆動回路用途に最適です。 特 徴 ○ hFE

5.2. 2sc6140.pdf Size:173K _update

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2SC6140 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6140 ○ Audio Frequency Amplifier Applications 単位: mm • High collector voltage : VCEO = 160 V • Small collector output capacitance : Cob = 12pF (typ.) • High transition frequency : fT = 100MHz (typ.) • Complementary to 2SA2220 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collec

 5.3. 2sc6123-z.pdf Size:306K _update

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2SC618

暫定版 データシート 2SC6123 R07DS0329JJ0100 Rev.1.00 シリコン・パワー・トランジスタ 2011.04.15 概 要 2SC6123 は,高速スイッチング用として開発された低 VCE(sat),高 hFE の NPN トランジスタですので,OA, FA 機器等の DC/DC コンバータや各種アクチュエータ駆動回路用途に最適です。 特 徴 ○ hFE

5.4. 2sc6114g5gp.pdf Size:352K _update

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2SC618

CHENMKO ENTERPRISE CO.,LTD 2SC6114G5GP SURFACE MOUNT Transistor VOLTAGE 50 Volts CURRENT 0.1 Ampere APPLICATION * Small signal low frequency amplifier. FEATURE * Surface mount package. (FBPT-1023) * Low cob. Cob=0.2pF(Typ.) * PC= 150mW CONSTRUCTION * NPN Silicon Transistor C (3)

 5.5. 2sc6145.pdf Size:227K _update

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2SC6145 Audio Amplification Transistor Features and Benefits Description ▪ LAPT (High frequency multi emitter transistor) Sanken LAPT transistors have an innovative design, produced ▪ Small package (TO-3P) by adapting advancements in the unique Sanken thin-wafer ▪ High power handling capacity, 160 W production technology. These NPN power transistors achieve ▪ Improved sound out

5.6. 2sc6120.pdf Size:138K _update

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2SC6120 FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Unit:mm OUTLINE DRAWING 2SC6120 is a silicon NPN epitaxial type transistor designed with 2.1 high collector current, low VCE(sat). 0.425 1.25 0.425 FEATURE ① ●High collector current ② ③ IC(MAX)=600mA ●Low collector to emitter saturation voltage VCE(

5.7. 2sc6145a.pdf Size:226K _update

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2SC6145A Audio Amplification Transistor Features and Benefits Description ▪ LAPT (High frequency multi emitter transistor) Sanken LAPT transistors have an innovative design, produced ▪ Small package (TO-3P) by adapting advancements in the unique Sanken thin-wafer ▪ High power handling capacity, 160 W production technology. These NPN power transistors achieve ▪ Improved sound ou

5.8. 2sc6127.pdf Size:132K _update

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2SC618

 2SC6127 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6127 High Voltage Switching Applications Unit: mm High Voltage Amplifier Applications • High voltage: VCEO = 800 V Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 800 V Collector-emitter voltage VCEO 800 V Emitter-base voltage VEBO 5 V Collector current IC 5

5.9. 2sc6136.pdf Size:191K _update

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2SC6136 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6136 ○ High Voltage Switching Applications Unit: mm ○ Switching Regulator Applications ○ DC-DC Converter Applications • High speed switching: tf = 0.18 μs (typ.) (IC = 0.3 A) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 600 V Collector-emitter voltag

5.10. 2sc6132.pdf Size:230K _update

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2SC6132 東芝トランジスタ シリコンNPNエピタキシャル形 2SC6132 ○ 電力増幅用 単位: mm ○ 電力スイッチング用 • コレクタ・エミッタ間飽和電圧が低い。 : VCE (sat) = 0.15V (最大) • スイッチング時間が速い。 絶対最大定格 (Ta = 25°C) 項 目 記 号 定 格 単位 コ レ ク タ ・ ベ ー ス 間 電

5.11. 2sc6105.pdf Size:146K _update

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2SC618

2SC6105 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC6105 High Voltage Switching Applications Unit: mm • High voltage: VCEO = 600 V (max) • Low saturation voltage: VCE (sat) (1) = 1.0 V (max) @IC = 20 mA, IB = 0.5 mA Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 600 V Collector-emitter voltage

5.12. 2sc6114t1gp.pdf Size:75K _update

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2SC618

CHENMKO ENTERPRISE CO.,LTD 2SC6114T1GP SURFACE MOUNT Transistor VOLTAGE 50 Volts CURRENT 0.1 Ampere APPLICATION * Small signal low frequency amplifier. FEATURE * Surface mount package. (SOT-923) SOT-923 * Low cob. Cob=0.2pF(Typ.) * PC= 150mW 0.18~0.26 0.08~0.14 CONSTRUCTION (3) * NPN Silicon Transistor (1) (2) 0.11~0.19 0.36~0.41 0.35(typ) C (3) 0.565~0.635 CIRCUIT SOT-923

5.13. 2sc6139 090928.pdf Size:185K _toshiba

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2SC6139 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6139 0 Audio Frequency Amplifier Applications Unit: mm High collector voltage : VCEO = 160 V (min) Small collector output capacitance : Cob = 12pF (typ.) High transition frequency : fT = 100MHz (typ.) Complementary to 2SA2219 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base v

5.14. 2sc6134 100307.pdf Size:144K _toshiba

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2CS6134 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6134 High-Speed Switching Applications Unit: mm DC-DC Converter Applications 2.10.1 Strobe Applications 1.70.1 High DC current gain: hFE = 250 to 400 (IC = 0.3A) 1 Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max) 3 2 High-speed switching: tf = 25 ns (typ.) Absolute Maximum Ratings (Ta = 25C)

5.15. 2sc6126 090707.pdf Size:219K _toshiba

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2SC6126 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6126 High-Speed Switching Applications Unit : mm DC-DC Converter Applications LCD Backlighting Applications High DC current gain: hFE = 250 to 400 (IC= 0.3 A) Low collector-emitter saturation: VCE(sat) = 0.18 V (max) High-speed switching: tf = 40 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Ra

5.16. 2sc6133 100307.pdf Size:140K _toshiba

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2SC6133 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6133 High-Speed Switching Applications Unit: mm DC-DC Converter Applications 2.10.1 1.70.1 High DC current gain: hFE = 400 to 1000 (IC = 0.15A) 1 Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) 3 2 High-speed switching: tf = 45 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristics

5.17. 2sc6135 100307.pdf Size:140K _toshiba

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2SC6135 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6135 High-Speed Switching Applications Unit: mm DC-DC Converter Applications 2.10.1 Strobe Applications 1.70.1 1 High DC current gain: hFE = 400 to 1000 (IC = 0.1A) Low collector-emitter saturation voltage: VCE (sat) = 0.17 V (max) 3 2 High-speed switching: tf = 85 ns (typ.) Absolute Maximum Ratings (Ta = 25

5.18. 2sc6125 090924.pdf Size:150K _toshiba

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2SC6125 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6125 High-Speed Switching Applications Unit : mm Power Amplifier Applications High DC current gain: hFE = 180 to 390 (IC = 0.5 A) Low collector-emitter saturation: VCE (sat) = 0.2 V (max) High-speed switching: tf = 15 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Collector-base volt

5.19. 2sc6100 100622.pdf Size:165K _toshiba

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2SC6100 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6100 High-Speed Switching Applications Unit: mm DC-DC Converter Applications 2.10.1 Strobe Applications 1.70.1 High DC current gain: hFE = 400 to 1000 (IC = 0.3 A) 1 Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max) 3 2 High-speed switching: tf = 120 ns (typ.) Absolute Maximum Ratings (Ta = 2

5.20. 2sc6124 091019.pdf Size:201K _toshiba

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2SC6124 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6124 Power Amplifier Applications Unit: mm Power Switching Applications Low collector emitter saturation voltage : VCE (sat) = 0.5 V (max) (IC = 1 A) High-speed switching: tstg = 400 ns (typ.) Complementary to 2SA2206 Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 160

5.21. 2sc6142 100423.pdf Size:206K _toshiba

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2SC6142 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6142 Unit: mm 0 High Voltage Switching Applications 0 Switching Regulator Applications 6.50.2 0 DC-DC Converter Applications 5.20.2 0.6 MAX. Excellent switching times: tf = 0.15 ?s (typ.) 1.10.2 0.9 High collector breakdown voltage: VCES = 800 V, VCEO = 375 V 0.6 MAX 2.3 2.3 Absolute Maximum Ratings (Ta =

5.22. 2sc6118ls.pdf Size:46K _sanyo

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Ordering number : ENA0578 2SC6118LS SANYO Semiconductors DATA SHEET NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection 2SC6118LS Output Applications Features • High speed. • High breakdown voltage (VCBO=1500V). • High reliability (Adoption of HVP process). • Adoption of MBIT process. • On-chip damper diode. Specifications Absolute Maximum Ratings a

5.23. 2sc6144.pdf Size:68K _sanyo

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Ordering number : ENA1149 2SC6144 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC6144 High-Current Switching Applications Applications Relay drivers, lamp drivers, motor drivers. Features Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications Absolute Maximum Ratings a

5.24. 2sc6144sg.pdf Size:292K _sanyo

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2SC6144SG Ordering number : ENA1800 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC6144SG High-Current Switching Applications Applications Relay drivers, lamp drivers, motor drivers Features Adoption of MBIT process Large current capacitance (IC=10A) Low collector-to-emitter saturation voltage (VCE(sat)=180mV(typ.)) High-speed switching (tf=25ns(t

5.25. 2sc6114.pdf Size:77K _rohm

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2SC618

2SC6114 Transistors Small signal low frequency amplifier (50V, 100mA) 2SC6114 Applications VMN3 Small signal low frequency amplifier Features 0.22 0.16 (3) 1) Low Cob. Cob=2.0pF (Typ.) 2) Complements the 2SA2199. (1) (2) Structure 0.37 0.17 0.35 NPN silicon epitaxial 0.6 planar transistor (1) Base (2) Emitter Abbreviated symbol : N (3) Collector Dimensions

Otros transistores... 2SC611N , 2SC612 , 2SC612N , 2SC613 , 2SC614 , 2SC615 , 2SC616 , 2SC617 , A1015 , 2SC618A , 2SC619 , 2SC62 , 2SC620 , 2SC620M , 2SC621 , 2SC621A , 2SC621M .

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