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2SC645Z . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SC645Z
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.14 W
   Tensión colector-base (Vcb): 30 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.03 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 3 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: R145

 Búsqueda de reemplazo de transistor bipolar 2SC645Z

 

2SC645Z Datasheet (PDF)

 9.1. Size:626K  hitachi
2sc641.pdf

2SC645Z
2SC645Z

 9.2. Size:144K  jmnic
2sc643a.pdf

2SC645Z
2SC645Z

JMnic Product Specification Silicon NPN Power Transistors 2SC643A DESCRIPTION With TO-3 package High voltage,high reliability Low collector saturation voltage APPLICATIONS For color TV horizontal output applications PINNING(see fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMB

 9.3. Size:144K  jmnic
2sc643.pdf

2SC645Z
2SC645Z

JMnic Product Specification Silicon NPN Power Transistors 2SC643 DESCRIPTION With TO-3 package High voltage,high reliability Low collector saturation voltage APPLICATIONS For color TV horizontal output applications PINNING(see fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBO

 9.4. Size:115K  inchange semiconductor
2sc643a.pdf

2SC645Z
2SC645Z

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC643A DESCRIPTION With TO-3 package High voltage,high reliability Low collector saturation voltage APPLICATIONS For color TV horizontal output applications PINNING(see fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratin

 9.5. Size:177K  inchange semiconductor
2sc643.pdf

2SC645Z
2SC645Z

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC643DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V (Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching and horizontal deflectionoutput applications.ABSOLU

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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