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2SC647 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SC647
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 50 W
   Tensión colector-base (Vcb): 80 V
   Tensión colector-emisor (Vce): 80 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 1 MHz
   Ganancia de corriente contínua (hfe): 20
   Paquete / Cubierta: TO3

 Búsqueda de reemplazo de transistor bipolar 2SC647

 

2SC647 Datasheet (PDF)

 9.1. Size:626K  hitachi
2sc641.pdf

2SC647
2SC647

 9.2. Size:144K  jmnic
2sc643a.pdf

2SC647
2SC647

JMnic Product Specification Silicon NPN Power Transistors 2SC643A DESCRIPTION With TO-3 package High voltage,high reliability Low collector saturation voltage APPLICATIONS For color TV horizontal output applications PINNING(see fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMB

 9.3. Size:144K  jmnic
2sc643.pdf

2SC647
2SC647

JMnic Product Specification Silicon NPN Power Transistors 2SC643 DESCRIPTION With TO-3 package High voltage,high reliability Low collector saturation voltage APPLICATIONS For color TV horizontal output applications PINNING(see fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBO

 9.4. Size:115K  inchange semiconductor
2sc643a.pdf

2SC647
2SC647

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC643A DESCRIPTION With TO-3 package High voltage,high reliability Low collector saturation voltage APPLICATIONS For color TV horizontal output applications PINNING(see fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratin

 9.5. Size:177K  inchange semiconductor
2sc643.pdf

2SC647
2SC647

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC643DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V (Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching and horizontal deflectionoutput applications.ABSOLU

Otros transistores... 2SC642 , 2SC642A , 2SC643 , 2SC643A , 2SC644 , 2SC645 , 2SC645Z , 2SC646 , D667 , 2SC647P , 2SC648 , 2SC648H , 2SC649 , 2SC65 , 2SC650 , 2SC651 , 2SC652 .

History: 2SC2757O

 

 
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History: 2SC2757O

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