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2SC799 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SC799
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 10 W
   Tensión colector-base (Vcb): 80 V
   Tensión colector-emisor (Vce): 40 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 3 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 75 MHz
   Ganancia de corriente contínua (hfe): 50
   Paquete / Cubierta: TO5

 Búsqueda de reemplazo de transistor bipolar 2SC799

 

2SC799 Datasheet (PDF)

 ..1. Size:45K  no
2sc799.pdf

2SC799

 9.1. Size:39K  toshiba
2sc790.pdf

2SC799

 9.2. Size:142K  jmnic
2sc792.pdf

2SC799
2SC799

JMnic Product Specification Silicon NPN Power Transistors 2SC792 DESCRIPTION With TO-3 package High breakdown voltage APPLICATIONS For voltage regulator,inverter,switching mode power supply applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=) SYMBOL PARAMETER CON

 9.3. Size:215K  inchange semiconductor
2sc790.pdf

2SC799
2SC799

isc Silicon NPN Power Transistor 2SC790DESCRIPTIONLow Collector Saturation Voltage-: V = 1.4(V)(Max)@ I = 2ACE(sat) CDC Current Gain-: h = 40-240 @ I = 0.5AFE CComplement to Type 2SA490Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSY

 9.4. Size:176K  inchange semiconductor
2sc792.pdf

2SC799
2SC799

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC792DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 300V (Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching and horizontal deflectionoutput applications.ABSOLU

Otros transistores... 2SC793B , 2SC793R , 2SC793Y , 2SC794 , 2SC795 , 2SC796 , 2SC797 , 2SC798 , BC548 , 2SC80 , 2SC800 , 2SC801 , 2SC802 , 2SC803 , 2SC804 , 2SC805 , 2SC805A .

 

 
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Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050

 

 

 
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