2SC941O Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC941O
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 35 V
Tensión colector-emisor (Vce): 35 V
Tensión emisor-base (Veb): 4 V
Corriente del colector DC máxima (Ic): 0.02 A
Temperatura operativa máxima (Tj): 125 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 80 MHz
Capacitancia de salida (Cc): 3 pF
Ganancia de corriente contínua (hFE): 70
Encapsulados: TO92
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2SC941O datasheet
8.2. Size:249K toshiba
2sc941tm.pdf 
2SC941TM TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC941TM High Frequency Amplifier Applications Unit mm AM High Frequency Amplifier Applications AM Frequency Converter Applications Low noise figure NF = 3.5dB (max) (f = 1 MHz) Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 35 V Collector-emitter
9.3. Size:244K mcc
2sc945-y.pdf
MCC 2SC945-Y Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components 2SC945-GR CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Capable of 0.4Watts of Power Dissipation. NPN Silicon Collector-current 0.15A Plastic-Encapsulate Collector-base Voltage 60V Operating and storage junction temperature range -55OC to +150OC
9.4. Size:244K mcc
2sc945-gr.pdf
MCC 2SC945-Y Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components 2SC945-GR CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Capable of 0.4Watts of Power Dissipation. NPN Silicon Collector-current 0.15A Plastic-Encapsulate Collector-base Voltage 60V Operating and storage junction temperature range -55OC to +150OC
9.5. Size:194K utc
2sc945.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SC945 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR DESCRIPTION The UTC 2SC945 is an audio frequency amplifier high frequency OSC NPN transistor. FEATURES * Collector-Emitter voltage BVCBO=50V * Collector current up to 150mA * High hFE linearity * Complimentary to UTC 2SA733 ORDERING I
9.8. Size:226K no
2sc945.pdf
ST 2SC945 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups, R, O, Y, P and L, according to its DC current gain. As complementary type the PNP transistor ST 2SA733 is recommended. On special request, these transistors can be 1. Emitter 2. Collector 3. Base manufactured in different pin configurati
9.10. Size:151K jmnic
2sc940.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC940 DESCRIPTION With TO-3 package High current capability Wide area of safe operation APPLICATIONS For B/W TV horizontal deflection application PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETE
9.11. Size:272K shenzhen
2sc945.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC945 TRANSISTOR (NPN) FEATURE 1. BASE Excellent hFE Linearity 2. EMITTER Low noise 3. COLLECTOR Complementary to A733 MARKING CR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emi
9.13. Size:1959K blue-rocket-elect
2sc945.pdf
2SC945 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features , h FE High voltage, excellent hFE linearity. / Applications AF amplifier and low speed switching applications. / Eq
9.14. Size:145K semtech
2sc945r 2sc945o 2sc945y 2sc945p 2sc945l.pdf
2SC945 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups, R, O, Y, P and L, according to its DC current gain. As complementary type the PNP transistor 2SA733 is recommended. On special request, these transistors can be 1. Emitter 2. Collector 3. Base manufactured in different pin configurations. T
9.15. Size:634K china
2sc945lt1.pdf
SEMICONDUCTOR 2SC945LT1 Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR Package SOT-23 * Collector Current Ic= 150mA * Collector-Emitter Voltage Vce= 50V * High Total Power Dissipation Pc=225mW * High Hfe And Good Linearity ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating Unit Collector-Base Voltage Vcbo 60 V
9.16. Size:781K kexin
2sc945.pdf
SMD Type SMD Type si o ors SMD Type TranDistdes NPN Transistors 2SC945 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector current up to 150mA High hFE linearity 1 2 Complementary to 2SA733 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector
9.17. Size:260K galaxy
2sc945.pdf
Product specification Silicon Epitaxial Planar Transistor 2SC945 FEATURES Pb High voltage and high current. Lead-free Excellent h linearity. FE Low noise. APPLICATIONS Audio frequency amplifier. SOT-23 ORDERING INFORMATION Type No. Marking Package Code 2SC945 CR SOT-23 none is for Lead Free package; G is for Halogen Free package
9.18. Size:789K cn evvo
2sc945-l 2sc945-h.pdf
2SC945 NPN Transistors 3 2 1.Base 2.Emitter Features 1 3.Collector Collector current up to 150mA Simplified outline(SOT-23) High hFE linearity Complementary to 2SA733 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 5 V Collector curren
9.19. Size:191K inchange semiconductor
2sc940.pdf
isc Silicon NPN Power Transistor 2SC940 DESCRIPTION High Breakdown Voltage- V = 90V(Min) CEO Wide Safe Operating Area Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for B/W TV horizontal deflection output applications. Suitable for horizontal output applications in 12 24 inch B/W TV, and switching applications of 5
9.20. Size:189K inchange semiconductor
2sc945.pdf
isc Silicon NPN Transistor 2SC945 DESCRIPTION High Voltage Excellent h linearity FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Dsigned for use in driver stage of AF amplifier and low speed switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 60 V CBO V Collector-Emitter Vol
Otros transistores... 2SC936, 2SC936A, 2SC937, 2SC938, 2SC939, 2SC94, 2SC940, 2SC941, 2N2222A, 2SC941R, 2SC941TM, 2SC941TMO, 2SC941TMR, 2SC941TMY, 2SC941Y, 2SC942, 2SC943
